Electromechanical influence of crack velocity at bifurcation for poled ferroelectric materials

The piezoelastodynamic field equations are solved to determine the crack velocity at bifurcation for poled ferroelectric materials where the applied electrical field and mechanical stress can be varied. The underlying physical mechanism, however, may not correspond to that assumed in the analytical model. Bifurcation has been related to the occurrence of a pair of maximum circumferential stress oriented symmetrically about the moving crack path. The velocity at which this behavior prevails has been referred to as the limiting crack speed. Unlike the classical approach, bifurcation will be identified with finite distances ahead of a moving crack. Nucleation of microcracks can thus be modelled in a single formulation. This can be accomplished by using the energy density function where fracture initiation is identified with dominance of dilatation in relation to distortion. Poled ferroelectric materials are selected for this study because the microstructure effects for this class of materials can be readily reflected by the elastic, piezoelectic and dielectric permittivity constants at the macroscopic scale. Existing test data could also shed light on the trend of the analytical predictions. Numerical results are thus computed for PZT-4 and compared with those for PZT-6B in an effort to show whether the branching behavior would be affected by the difference in the material microstructures. A range of crack bifurcation speed upsilon(b) is found for different r/a and E/sigma ratios. Here, r and a stand for the radial distance and half crack length, respectively, while E and a for the electric field and mechanical stress. For PZT-6B with upsilon(b) in the range 100-1700 m/s, the bifurcation angles varied from +/-6degrees to +/-39degrees. This corresponds to E/sigma of -0.072 to 0.024 V m/N. At the same distance r/a = 0.1, PZT-4 gives upsilon(b) values of 1100-2100 m/s; bifurcation angles of +/-15degrees to +/-49degrees; and E/sigma of -0.056 to 0.059 V m/N. In general, the bifurcation angles +/-theta(0) are found to decrease with decreasing crack velocity as the distance r/a is increased. Relatively speaking, the speed upsilon(b) and angles +/-theta(0) for PZT-4 are much greater than those for PZT-6B. This may be attributed to the high electromechanical coupling effect of PZT-4. Using upsilon(b)(0) as a base reference, an equality relation upsilon(b)(-) < upsilon(b)(0) < upsilon(b)(+) can be established. The superscripts -, 0 and + refer, respectively, to negative, zero and positive electric field. This is reminiscent of the enhancement and retardation of crack growth behavior due to change in poling direction. Bifurcation characteristics are found to be somewhat erratic when r/a approaches the range 10(-2)-10(-1) where the kinetic energy densities would fluctuate and then rise as the distance from the moving crack is increased. This is an artifact introduced by the far away condition of non-vanishing particle velocity. A finite kinetic energy density prevails at infinity unless it is made to vanish in the boundary value problem. Future works are recommended to further clarify the physical mechanism(s) associated with bifurcation by means of analysis and experiment. Damage at the microscopic level needs to be addressed since it has been known to affect the macrocrack speeds and bifurcation characteristics. (C) 2002 Published by Elsevier Science Ltd.

Energy principle of ferroelectric ceramics and single domain mechanical model

Many physical experiments have shown that the domain switching in a ferroelectric material is a complicated evolution process of the domain wall with the variation of stress and electric field. According to this mechanism, the volume fraction of the domain switching is introduced in the constitutive law of ferroelectric ceramic and used to study the nonlinear constitutive behavior of ferroelectric body in this paper. The principle of stationary total energy is put forward in which the basic unknown quantities are the displacement u (i) , electric displacement D (i) and volume fraction rho (I) of the domain switching for the variant I. Mechanical field equation and a new domain switching criterion are obtained from the principle of stationary total energy. The domain switching criterion proposed in this paper is an expansion and development of the energy criterion. On the basis of the domain switching criterion, a set of linear algebraic equations for the volume fraction rho (I) of domain switching is obtained, in which the coefficients of the linear algebraic equations only contain the unknown strain and electric fields. Then a single domain mechanical model is proposed in this paper. The poled ferroelectric specimen is considered as a transversely isotropic single domain. By using the partial experimental results, the hardening relation between the driving force of domain switching and the volume fraction of domain switching can be calibrated. Then the electromechanical response can be calculated on the basis of the calibrated hardening relation. The results involve the electric butterfly shaped curves of axial strain versus axial electric field, the hysteresis loops of electric displacement versus electric filed and the evolution process of the domain switching in the ferroelectric specimens under uniaxial coupled stress and electric field loading. The present theoretic prediction agrees reasonably with the experimental results given by Lynch.

Self-consistent kinetic modeling of low-pressure inductively coupled radio-frequency discharges

An efficient method for solving the spatially inhomogeneous Boltzmann equation in a two-term approximation for low-pressure inductively coupled plasmas has been developed. The electron distribution function (EDF), a function of total electron energy and two spatial coordinates, is found self-consistently with the static space-charge potential which is computed from a 2D fluid model, and the rf electric field profile which is calculated from the Maxwell equations. The EDF and the spatial distributions of the electron density, potential, temperature, ionization rate, and the inductive electric field are calculated and discussed. (C) 1996 American Institute of Physics.

A new model for the floating potential of fine particles in plasma

In the plasma processing of ultrafine particles of material, the heat transfer and force are considerably affected by particle charging. In this communication a new model, including thermal electron emission and incorporating the effect of electric field near the particle surface, is developed for metallic spherical particles under the condition of a thin plasma sheath. Based on this model, the particle floating potential, and thus the heat transfer and force, can be detemined more accurately and more realistically than previously.

Experimental Characterization Of Electrical Current Leakage In Poly(Dimethylsiloxane) Microfluidic Devices

Poly(dimethylsiloxane) (PDMS) is usually considered as a dielectric material and the PDMS microchannel wall can be treated as an electrically insulated boundary in an applied electric field. However, in certain layouts of microfluidic networks, electrical leakage through the PDMS microfluidic channel walls may not be negligible, which must be carefully considered in the microfluidic circuit design. In this paper, we report on the experimental characterization of the electrical leakage current through PDMS microfluidic channel walls of different configurations. Our numerical and experimental studies indicate that for tens of microns thick PDMS channel walls, electrical leakage through the PDMS wall could significantly alter the electrical field in the main channel. We further show that we can use the electrical leakage through the PDMS microfluidic channel wall to control the electrolyte flow inside the microfluidic channel and manipulate the particle motion inside the microfluidic channel. More specifically, we can trap individual particles at different locations inside the microfluidic channel by balancing the electroosmotic flow and the electrophoretic migration of the particle.

变形镜对千赫兹掺钛蓝宝石飞秒激光频谱相位补偿

尝试用光谱展宽的方法从频谱相位(而非时域相位)的角度利用变形反射镜来补偿1kHz飞秒激光系统输出光路的频谱相位畸变，从而提高飞秒激光脉冲的时域强度衬比度，改善其光束质量。频谱相位补偿实验是在一台1kHz掺钛蓝宝石飞秒激光系统输出光路中，针对超短脉冲光束通过传输介质后的频谱相位畸变，引入变形反射镜进行补偿。应用频谱相位干涉直接电场重构(SPIDER)方法和仪器作为测量手段，建立了一套相位测量补偿系统。实验结果表明用变形反射镜可使激光脉冲的相位畸变得到较好的补偿，脉冲的光束质量得到改善。这种方法的主要思想就是

双色激光场中激光强度和脉宽对线性多原子分子离子电离的影响

利用强激光场电离和离解分子来研究分子激发态的波包结构是强场物理的重要研究方向。利用短时指数传播子对称分割法和快速傅里叶变换技术。数值求解了一维含时Schr（oe）dinger方程，探讨了双色激光场中激光的基波和谐波强度之间的不同配比以及脉宽对线性多原子分子离子电离的影响。理论计算结果表明：基波和谐波的相对相位为π时，尽管随着激光的基波和谐波强度之间配比的变化，电离几率随原子间距变化的趋势基本保持不变，但在一定的激光基波强度下(1．2×10^13～1．2×10^15W／cm^2)，激光基波强度的变化可以明显

外加高压电场下空气中激光等离子体通道寿命研究

通过对飞秒激光在空气中产生的等离子体通道两端外加高压,来研究通道的寿命变化情况。实验得到,当在等离子体通道两端外加高压时(350 kV/m),等离子体通道寿命延长了近3倍。理论模拟和分析结果表明在外加电场条件下,碰撞电离得到增强,吸附作用相对减弱,解离复合系数随着电子平均能量的增加而下降的趋势更为剧烈,这进一步引起了等离子体通道寿命的延长。实验结果与理论分析共同表明了利用外加电场对空气中激光等离子体通道寿命进行延长的可行性。

Fabrication of microelectrodes deeply embedded in LiNbO3 using a femtosecond laser

We present a novel technique to fabricate deeply embedded microelectrodes in LiNbO3 using femtosecond pulsed laser ablation and selective electroless plating. The fabrication process mainly consists of four steps, which are (1) micromachining of microgrooves on the surface of LiNbO3 by femtosecond laser ablation; (2) formation of AgNO3 films on substrates; (3) scanning the femtosecond laser beam in the fabricated microgrooves for modi. cation of the inner surfaces; and (4) electroless copper plating. The void-free electroless copper plating is obtained with appropriate cross section of microgrooves and uniform initiation of the autocatalytic deposition on the inner surface of grooves. The dimension and shape of the microelectrodes could be accurately controlled by changing the conditions of femtosecond laser ablation, which in turn can control the distribution of electric field inside LiNbO3 crystal for various applications, opening up a new approach to fabricate three-dimensional integrated electro-optic devices. (C) 2008 Elsevier B. V. All rights reserved.

Short-pulse laser absorption in very steep plasma density gradients

An analytical fluid model for resonance absorption during the oblique incidence by femtosecond laser pulses on a small-scale-length density plasma [k(0)L is an element of(0.1,10)] is proposed. The physics of resonance absorption is analyzed more clearly as we separate the electric field into an electromagnetic part and an electrostatic part. It is found that the characteristics of the physical quantities (fractional absorption, optimum angle, etc.) in a small-scale-length plasma are quite different from the predictions of classical theory. Absorption processes are generally dependent on the density scale length. For shorter scale length or higher laser intensity, vacuum heating tends to be dominant. It is shown that the electrons being pulled out and then returned to the plasma at the interface layer by the wave field can lead to a phenomenon like wave breaking. This can lead to heating of the plasma at the expanse of the wave energy. It is found that the optimum angle is independent of the laser intensity while the absorption rate increases with the laser intensity, and the absorption rate can reach as high as 25%. (c) 2006 American Institute of Physics.

Surface planar ion chip for linear radio-frequency Paul traps

We propose a surface planar ion chip which forms a linear radio frequency Paul ion trap. The electrodes reside in the two planes of a chip, and the trap axis is located above the chip surface. Its electric field and potential distribution are similar to the standard linear radio frequency Paul ion trap. This ion trap geometry may be greatly meaningful for quantum information processing.

TWO-DIMENSIONAL ARRAY OF ION TRAPS ON A PLANAR CHIP

We investigate a planar ion chip design with a two-dimensional array of linear ion traps for the scalable quantum information processor. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate, a combination of appropriate rf and DC potentials are applied to them for stable ion confinement, and the trap axes are located above the surface at a distance controlled by the electrodes' lateral extent and the substrate's height as discussed. The potential distributions are calculated using static electric field qualitatively. This architecture is conceptually simple and many current microfabrication techniques are feasible for the basic structure. It may provide a promising route for scalable quantum computers.

强外加电场与大调制度下光折变动力学光栅形成研究

强外加电场与大调制度在光折变效应的研究中已经得到了广泛应用。采用PDECOL算法, 严格求解光折变带输运方程, 得到外加电场时不同调制度下光折变晶体中随时间变化的空间电荷场、载流子浓度, 并讨论了外加电场对它们的影响。通过将物质方程与耦合波方程联立数值求解, 可得到光折变光栅形成过程中两波耦合增益系数以及光束条纹相位的变化。模拟结果表明, 在强外加电场作用下, 两束记录光之间的光强与相位耦合都得到了增强, 而原有的解析式忽视了强外加电场与大调制度对空间电荷场相位耦合的影响, 此时不再适用。同时发现折射率光

组合外加电场提高Fe：LiNbO3中90°记录体全息的衍射效率

针对90°全息记录结构的特殊性，在记录和读出阶段分别施加不同极性的外加电场，实现了Fe：LiNbO3晶体中高衍射效率的全息记录和读出。在库赫塔列夫（Kukhtarev）方程基础上引人两维耦合波理论，对组合外加电场提高掺铁铌酸锂晶体光折变特性的机理进行了探讨。实验和理论计算结果都表明这种分别在记录和读出过程施加不同极性组合的外加电场是在Fe：LiNbO3中实现高衍射效率90°记录结构体全息的有效技术方案。

铌酸锂晶体紫外激光诱导畴反转实验研究

报道了在铌酸锂晶体中实现紫外激光诱导畴反转的实验。在一定外加均匀电场下，铌酸锂晶体中通过波长365nm的紫外激光，由于紫外光的照射降低了矫顽电场只在通光区实现畴反转。研究表明，该方案可用于周期性极化铌酸锂的制备，并有望成为制作精细周期性畴结构的有效技术方案。