A genetic map of large yellow croaker Pseudosciaena crocea

Genetic linkage maps were constructed for large yellow croaker Pseudosciaena crocea (Richardson, 1846) using AFLP and microsatellite markers in an F-1 family. Five hundred and twenty-three AFLP markers and 36 microsatellites were genotyped in the parents and 94 F-1 progeny. Among these, 362 AFLP markers and 13 SSR markers followed the 1:1 Mendelian segregation ratio (P > 0.05). The female genetic map contained 181 AFLP and 7 microsatellite markers forming 24 linkage groups spanning 2959.1 cM, while the male map consisted of 153 AFLP and 8 microsatellite markers in 23 linkage groups covering 2205.7 cM. One sex linked marker was mapped to the male map and co-segregated with the AFLP marker agacta355, suggesting an XY-male determination mechanism and this may be useful in the breeding of monosex populations. (c) 2007 Elsevier B.V. All rights reserved.

Effect of dietary supplementation of vitamins A, D-3, E, and C on yearling rice field eel, Monopterus albus: Serum indices, gonad development, and metabolism of calcium and phosphorus

The objective of this study was to determine the effect of dietary vitamins A, D-3, E, and C on the gonad development, lipid peroxidation, and immune response of yearling rice field eel, Monopterus albus. A 6-wk feeding trial was designed according to an L-16(4(5)) orthogonal design, in which four vitamins, each at four supplementation levels, were arranged. Sixteen diets were mixed with the different vitamin levels and randomly assigned to 16 groups of fish. Increasing dietary vitamin E supplementation level significantly (P <= 0.05) increased the gonadosomatic index and lowered the serum content of malondialdehyde of rice field eel. Increasing dietary vitamin A and C levels also showed similar effect, but the differences were not statistically significant. Serum immunoglobulin M content increased significantly (P <= 0.01) as dietary vitamin C supplementation levels increased. The concentrations of calcium in bones showed significant (P <= 0.05) trend with vitamin D-3 and A supplementation levels, but the bone phosphorus content was not affected by the dietary vitamin levels.

Benthic algae of the Gangqu River, Shangrila, China

We surveyed the benthic algae at 32 sites in the Gangqu River system during May 2005. Among the 162 different taxa observed, 88.8% were diatoms. Achnanthes linearis and Achnanthes lanceolata var. elliptica were the dominant species, comprising 17.1% and 14.3% of the total relative abundance, respectively.

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

Polymerization of ionic liquid-based microemulsions: A versatile method for the synthesis of polymer electrolytes

电子邮箱fyan@suda.edu.cn

The application of DBF neural networks for object recognition

On the basis of DBF nets proposed by Wang Shoujue, the model and properties of DBF neural network were discussed in this paper. When applied in pattern recognition, the algorithm and implement on hardware were presented respectively. We did experiments on recognition of omnidirectionally oriented rigid objects on the same level, using direction basis function neural networks, which acts by the method of covering the high dimensional geometrical distribution of the sample set in the feature space. Many animal and vehicle models (even with rather similar shapes) were recognized omnidirectionally thousands of times. For total 8800 tests, the correct recognition rate is 98.75%, the error rate and the rejection rate are 0.5% and 1.25% respectively. (C) 2003 Elsevier Inc. All rights reserved.

Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface

National Natural Science Foundation of China 60836002 10674130 60521001;Major State Basic Research of China 2007CB924903;Chinese Academy of Sciences KJCX2.YW.W09-1

Electronic structure and electron g factors of HgTe quantum dots

The electronic structure and electron g factors of HgTe quantum dots are investigated, in the framework of the eight-band effective-mass approximation. It is found that the electron states of quantum spheres have aspheric properties due to the interaction between the conduction band and valence band. The highest hole states are S (l = 0) states, when the radius is smaller than 9.4 nm. the same as the lowest electron states. Thus strong luminescence from H-Te quantum dots with radius smaller than 9.4 nm has been observed (Rogach et al 2001 Phys. Statits Solidi b 224 153). The bandgap of H-Te quantum spheres is calculated and compared with earlier experimental results (Harrison et al 2000 Pure Appl. Chem. 72 295). Due to the quantum confinement effect, the bandgap of the small HgTe quantum spheres is positive. The electron g factors of HgTe quantum spheres decrease with increasing radius and are nearly 2 when the radius is very small. The electron g factors of HgTe quantum ellipsoids are also investigated. We found that as some of the three dimensions increase, the electron g factors decrease. The more the dimensions increase, the more the g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension.

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Molecular beam epitaxy was employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current was effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions was observed at relatively high temperature of 77 K. The ground states of quantum dots were found to be at similar to 0.19 eV below the conduction band of GaAs matrix. The theoretical computations were in conformity with experimental data. (c) 2006 The Electrochemical Society.

Quantum dots in glass spherical microcavity

Glass spherical microcavities containing CdSexS1-x semiconductor quantum dots (QDs) are fabricated. The coupling between the optical emission of embedded CdSexS1-x QDs and spherical cavity modes is realized. When the luminescence of QDs is excited by a laser beam, the strong whispering gallery mode resonance with high Q factors is achieved in the photoluminescence spectra. (C) 2001 American Institute of Physics.

Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

The effect of Si overgrowth on the structural and luminescence properties of strained Ge layer grown on Si(1 0 0) is studied. Capping Si leads to the dissolution of Ge island apex and reduced island height. The structural changes in island shape, especially in chemical composition during Si overgrowth have a large effect on the PL properties. The integrated PL intensity of Ge layer increases and there are large blue shifts in peak energies after capping Si. The PL spectra from buried Ge layer are consistent with type-II band alignment in SiGe/Si. We show that the PL properties from buried Ge layer may be tailored by modifying the cap layer growth conditions as well as post-growth annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Cubic InGaN grown by MOCVD

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by Xray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

SOI-based thermo-optic waveguide switch matrix with spot size converters

A SOI-based thermo-optic waveguide switch matrix worked at 1.55 mu m, integrated with spot size converters is designed and fabricated for the first time. The insertion loss and polarization dependent loss are less than 13dB and 2dB, respectively. The extinction ratio is larger than 19dB. The response time is less than 5 mu s and the power consumption of the switch cell is about 200mW.