Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex: layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content

Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 mu m range is much more apparent than that in the 1.3 mu m range.. which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 mu m single-QW were comparable with that of the 1.3 Am QWs. (c) 2006 Elsevier B.V. All rights reserved.

Content analyses in GaMnAs by double-crystal X-ray diffraction

A model for analyzing point defects in compound crystals was improved. Based on this modified model, a method for measuring Mn content in GaMnAs was established. A technique for eliminating the zero-drift-error was also established in the experiments of X-ray diffraction. With these methods, the Mn content in GaMnAs single crystals fabricated by the ion-beam epitaxy system was analyzed.

Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers

On the basis of integrated intensity of rocking curves, the multiplicity factor and the diffraction geometry factor for single crystal X-ray diffraction (XRD) analysis were proposed and a general formula for calculating the content of mixed phases was obtained. With a multifunction four-circle X-ray double-crystal diffractometer, pole figures of cubic (002), {111} and hexagonal {1010} and reciprocal space mapping were measured to investigate the distributive character of mixed phases and to obtain their multiplicity factors and diffraction geometry factors. The contents of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {1010} and {1011}.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD

The annealing behavior of the hexagonal phase content in cubic GaN (c-GaN) thin films grown on GaAs (001) by MOCVD is reported. C-GaN thin films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). High temperature annealing is employed to treat the as-grown c-GaN thin films. The characterization of the c-GaN films is investigated by photoluminescence (PL) and Raman scattering spectroscopy. The change conditions of the hexagonal phase content in the metastable c-GaN are reported. There is a boundary layer existing in the c-GaN/GaAs film. When being annealed at high temperature, the intensity of the TOB and LOB phonon modes from the boundary layer weakens while that of the E-2 phonon mode from the hexagonal phase increases. The content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period.

Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

间伐对仁用杏园土壤理化性质及生长结果的影响

为了探讨密闭仁用杏园衰败的原因,采用常规的方法研究了间伐对仁用杏园土壤养分、水分及树体生长等方面的影响。结果表明:间伐减小了土壤容重,略微增加了土壤孔隙度;间伐显著提高了0-40 cm土层土壤有机质、0-20 cm土层土壤全氮,略微提高了0-20 cm土层土壤全磷;间伐显著提高了0-80 cm土层土壤速效氮、0-40 cm土层土壤速效磷和0-60 cm土层土壤速效钾,且间伐强度越大土壤养分越高;间伐显著提高了0-500cm土层土壤水分,在干旱的春季、夏季优为显著,且间伐强度越大,土壤水分越高;间伐显著促进了仁用杏生长,提高了坐果率和杏仁产量。白于山山区仁用杏间伐后密度应为167~222株/hm2。

黄土高原坡地密植枣园土壤质地与肥力状况分析

采用田间取样与实验室分析相结合的方法,研究了黄土高原坡地密植枣园土壤质地与肥力状况。结果表明,坡地枣园土壤肥力低,氮、磷严重缺乏,钾相对丰富,土壤属于砂壤土,通气性强,保肥、保水性差。0~60 cm土壤有机质含量为1.687~5.002 mg/kg;全氮为0.072~0.316 g/kg;硝酸盐为2.325~16.846 g/kg;铵态氮为1.187~2.146 g/kg,速效磷为0.270~2.480 mg/kg,速效钾为51.9~169.1 mg/kg,并且含量均随剖面向下减少。颗粒组成大部分为粉砂粒,含量一般在65.75%~68.98%;随有机质含量升高,0.25~0.05 mm微团聚体数量呈上升趋势,二者为正相关;<0.05 mm微团聚体含量则逐渐下降,二者呈负相关。黄土高原坡地密植枣园土壤肥力总体水平很低。除了速效钾为中等级外,有机质、全氮、碱解氮、速效磷均为很低等级。

施肥对干旱胁迫下夏玉米根系提水的调节作用研究

以耐旱性玉米品种郑单958号为材料,采用两室分根土培装置,通过时域反射计(TDR)对上下土层土壤含水量进行控制和观测,研究施肥对干旱胁迫条件下玉米根系提水作用的影响.结果表明,玉米根系在土层上干下湿条件下(即上下层土壤存在一定水势差时)存在明显提水作用;玉米根系提水量在整个生育期呈单峰变化,并以吐丝期最大;上层土壤施肥可以调节玉米根系提水作用强弱,整个生育期根系总提水量表现为NP配施>单施P>CK>单施N,NP配施处理全生育期单株提水量(1 948.6 g)分别是单施P处理、CK和单施N处理的1.5倍、3.1倍和3.5倍.玉米整个生育期根系总提水量与收获期不同层次根系干重和体积存在极显著正相关关系,也与其地上部分生物量和籽粒产量呈极显著或显著正相关关系.可见,玉米根系的提水作用强弱因生育期和施肥处理而变化,施肥主要通过影响根系生长来调节其提水作用;在一定水分环境条件下,玉米根系提水作用能促进作物生长,提高其籽粒产量.