307 resultados para YELLOW PHOSPHOR


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Gd2Ti2O7: Eu3+ thin film phosphors were fabricated by a sol-gel process. X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 800 degreesC and the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free phosphor films were obtained, which mainly consisted of grains with an average size of 70 nm. The doped Eu3+ showed orange-red emission in crystalline Gd2Ti2O7 phosphor films due to an energy transfer from Gd2Ti2O7 host to them. Both the lifetimes and PL intensity of the Eu3+ increased with increasing the annealing temperature from 800 to 1000 degreesC, and the optimum concentrations for Eu3+ were determined to be 9 at.%. of Gd3+ in Gd2Ti2O7 film host.

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A novel long-lasting phosphor CdSiO3:Mn2+ is reported in this paper. The Mn2+-doped CdSiO3 phosphor emits orange light with CIE chromaticity coordinates x = 0.5814 and y = 0.4139 under 254 nm UV light excitation. In the emission spectrum of 1% Mn2+-doped CdSiO3 phosphor, there is a broad emission band centered at 575 nm which can be attributed to the,pin-forbidden transition of the d-orbital electron associated with the Mn2+ ion. The phosphorescence can be seen by the naked eyes in the dark clearly even after the 254 nm UV irradiation have been removed for about 1 h. The mechanism of the origin of the long-lasting phosphorescence was discussed using the thermoluminescence curves.

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We reported, for the first time to the best of our knowledge, the Sm3+ -doped yttriurn oxysulfide phosphors has reddish orange long-lasting phosphorescence. The phosphor show prominent luminescence in reddish orange due to the electronic transitions of (4)G(5/2) --> H-6(J) (J = 5/2, 7/2, 9/2), the afterglow color of this type of phosphors is a mixture of the three above mentioned electronic transition emissions and have a little different when the concentration of the Sm3+ dopant changes. Synthesis procedure of the Sm3+-yttrium oxysulfide reddish orange phosphor through the flux fusion method with binary flux compositions was presented. The synthesized phosphors were analyzed using X-ray diffraction (XRD) to interpret the structural characterization. The XRD analysis result reveal that the Y2O2S:Sm3+ phosphor synthesized with a binary flux composition containing (S and Na2CO3 at a ratio of 1: 1 at 30 wt.% of total raw material) at 1050degreesC for 3 h was in single-phase. Luminescence properties of the Y2O2S:Sm3+ long-lasting phosphor was analyzed by measuring the excitation spectra, emission spectra and afterglow decay curve. The mechanism of the strong afterglow from Y2O2S:Sm3+ was also discussed in this paper.

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A novel white light emitting long-lasting phosphor Cd1-xDyxSiO3 is reported in this letter. The Dy3+ doped CdSiO3 phosphor emits white light. The phosphorescence can be seen with the naked eye in the dark clearly even after the 254 nm UV irradiation have been removed for about 30 min. In the emission spectrum of 5% Dy3+ doped CdSiO3 phosphor, there are two emission peaks of Dy3+, 580 mn (F-4(9/2)-->H-6(13/2)) and 486 nm (F-4(9/2)-->H-6(15/2)), as well as a broad band emission located at about 410 nm. All the three emissions form a white light with CIE chromaticity coordinates x=0.3874, y=0.3760 and the color temperature is 4000 K under 254 mn excitation. It indicated that this phosphor is a promising new luminescent material for practice application.

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The synthesis and luminescence properties of Zn2SiO4:Mn phosphor layers on spherical silica spheres,i.e.,a kind of core-shell complex phosphor,Zn2SiO4:Mn@SiO2 were described.Firstly,monodisperse silica spheres were obtained via the Stober method by the hydrolysis of tetraethoxysilane(TEOS)Si(OC2H5)4 under base condition (using NH4OH as the catalyst).Secondly,the silica spheres were coated with a Zn2SiO4:Mn phosphor layer by a Pechini sol-gel process.X-ray diffraction(XRD),scanning electron microscope(SEM),energy-dispersive X-ray spectrum(EDS) and photoluminescence(PL) were employed to characterize the resulting complex phosphor.The results comfirm that 1000℃ annealed sample consists of crystalline Zn2SiO4:Mn shells and amorphous SiO2 cores.The phosphor show the green emission of Mn2+ at 521nm corresponding 4T1(4G)-6A1(6S) transition,and the possible luminescence mechanism is proposed.

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We observed that the SrMg2(PO4)(2):Eu phosphor could emit long life phosphorescence with the excitation light whose wavelength was shorter than 420 nm, however, when La, Ce, or Gd was codoped, the wavelength of the excitation light to cause the phosphorescence had a redshift of 40 nm. A possible mechanism and related discussion for this redshift phenomenon of the excitation light was given. It was suggested that the threshold between the trap and valence band was decreased with the addition of the codopants.

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Spherical SiO2 particles have been coated with YVO4:Dy3+/Sm3+ phosphor layers by a Pechini sol-gel process, leading to the formation of core-shell structured SiO2@YVO4:Dy3+/Sm3+ particles. X-ray diffraction (XRD), Fourier-transform IR spectroscopy, field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting SiO2 @YVO4:Dy3+/Sm3+ core-shell phosphors. The obtained core-shell phosphors have perfect spherical shape with narrow size distribution (average size ca. 300 nm), smooth surface and non-agglomeration. The thickness of shells could be easily controlled by changing the number of deposition cycles (20 nm for one deposition cycle). The core-shell particles show strong characteristic emission from Dy3+ for SiO2@YVO4:Dy3+ and from Sm3+ for SiO2@YVO4:Sm3+ due to an efficient energy transfer from YVO4 host to them. The PL intensity of Dy3+ and Sm3+ increases with raising the annealing temperature and the number of coating cycles.

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Europium-doped nanocrystalline GdVO4 phosphor layers were coated on the surface of preformed submicron silica spheres by sol-gel method. The resulted SiO2@Gd0.95Eu0.05VO4 core-shell particles were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra, low voltage cathodoluminescence (CL), time resolved PL spectra and kinetic decays. The XRD results demonstrate that the Gd0.95Eu0.05VO4 layers begin to crystallize on the SiO2 spheres after annealing at 600 C and the crystallinity increases with raising the annealing temperature. The obtained core-shell phosphors have spherical shape, narrow size distribution (average size ca. 600 nm), non-agglomeration. The thickness of the Gd0.95Eu0.05VO4 shells on the SiO2 cores could be easily tailored by varying the number of deposition cycles (50 nm for four deposition cycles). PL and CL show that the emissions are dominated by D-5(0)-F-7(2) transition of Eu3+ (618 nm, red).

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The Sr2Mg(BO3)(2) phosphors doped respectively with Tm3+, Tb3+ and Dy3+ as activator were prepared by high temperature solid-state reaction. All the thermo luminescence curves of the phosphors consisted of two isolated peaks and the Dy3+ activated sample exhibited the strongest thermo luminescence intensity. The kinetic parameters of the thermoluminescence of Sr2Mg(BO3)(2):0.04 Dy were calculated employing the peak shape method and 3 dimensional thermo luminescent emission spectra were observed peaking at 480, 579, 662 and 755 nm due to the characteristic transition of Dy3+. In addition, the pre-irradiation heat-treatment and the thermoluminescence dose response of Sr2Mg(BO3)(2):0.04 Dy were investigated.

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Silicate oxyapatite La-9.33 (SiO6)(4)O-2:A (A = Eu3+, Tb3+ and/or Ce3+) phosphor films and their patterning were fabricated by a sol-gel process combined with soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, atomic force microscopy, optical microscopy and photoluminescence spectra, as well as lifetimes, were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 800degreesC and the crystallinity increased with the increase in annealing temperatures. Transparent nonpatterned phosphor films were uniform and crack-free, which mainly consisted of rodlike grains with a size between 150 and 210 nm. Patterned thin films with different bandwidths (20, 50 mum) were obtained by the micromoulding in capillaries technique. The doped rare earth ions (Eu3+, Tb3+ and Ce3+) showed their characteristic emission in crystalline La-9.33(SiO6)(4)O-2 phosphor films, i.e. Eu3+ D-5(0)-F-7(J) (J = 0, 1, 2, 3, 4), Tb3+ D-5(3,4)-F-7(J) (J = 3, 4, 5, 6) and Ce3+ 5d (D-2)-4f (F-2(2/5), F-2(2/7)) emissions, respectively. Both the lifetimes and PL intensity of the Eu3+, Tb3+ ions increased with increasing annealing temperature from 800 to 1100 degreesC, and the optimum concentrations for Eu3+, Tb3+ were determined to be 9 and 7 mol% of La3+ in La-9.33(SiO6)(4)O-2 films, respectively. An energy transfer from Ce3+ to Tb3+ was observed in the La-9.33(SiO6)(4)O-2:Ce, Tb phosphor films, and the energy transfer efficiency was estimated as a function of Tb3+ concentration.

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CaWO4 phosphor films doped with rare-earth ions (Eu3+, Dy-,(3+) Sm3+, Er3+) were prepared by the Pechini sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, thermogravimetric and differential thermal analysis, atomic force microscopy, and photoluminescence spectra, as well as lifetimes, were used to characterize the resulting powders and films. The results of the XRD analysis indicated that the films began to crystallize at 400degreesC and that the crystallinity increased with elevation of the annealing temperature. The doped rare-earth ions showed their characteristic emissions in crystalline CaWO4 phosphor films due to energy transfer from WO42- groups to them. Both the lifetimes and PL intensities of the doped rare-earth ions increased with increasing annealing temperature, from 500 to 900degreesC, and the optimum concentrations for Eu3+, Dy3+, Sm3+, Er3+ were determined as 30, 1.5, 1.5, 0.5 at.% of Ca2+ in CaWO4 films annealed at 900degreesC, respectively.

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Nanocrystalline Y2O3:Eu3+ phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography. X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM), optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 degreesC and the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained, which mainly consisted of grains with an average size of 70 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 mum). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped Eu3+ showed its characteristic emission in crystalline Y2O3 phosphor films due to an efficient energy transfer from Y2O3 host to them. Both the lifetimes and PL intensity of the Eu3+ increased with increasing the annealing temperature from 500 to 900 degreesC, and the optimum concentrations for Eu3+ were determined to be 5 mol%.

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Nanocrystalline Gd2O3:A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 degreesC and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 mum). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 degreesC, and the optimum concentrations for Eu3+, Dy3+, sm(3+), Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively.

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The reduction of Eu3+ to Eu2+ in air has been observed in a silicate matrix for the first time in BaMgSiO4:Eu prepared by high-temperature solid-state reaction. Emission and excitation spectra were employed to detect the presence of Eu2+ ions in the compound and this reduction was explained by a charge compensation model proposed previously. In BaMgSiO4 : Eu2+, Eu2+ ions occupy three different lattice sites by substitution for Ba2+ ions. Eu2+ ions on Ba(1) and Ba(2) sites gave emissions at about 500 nm while that on Ba(3) site showed an emission band at 398 nm. All the emissions of Eu2+ ions in BaMgSiO4 : Eu2+ were not quenched at room temperature.

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The high-resolution luminescent spectrum of divalent samarium excited by 355 nm UV light at 77 K, the VUV excitation spectra, the VUV excited emission spectra and EXAFS at Sm-L-3 edge were reported for samarium doped strontium borophosphate, SrBPO5:Sm prepared by solid state reaction in air at high temperature. The high-resolution luminescent spectrum showed that the divalent samarium ions occupied the C-2upsilon lattice sites. The VUV excitation spectra indicated that the sample exhibited absorption bands with the maxima at 129 and 148 nm, respectively. The performance of EXAFS at Sm-L3 absorption edge suggested that the samarium ions were nine-coordinated and the mean distances of bond Sm-O were 2.38 Angstrom.