Instabilities and transient behaviors of a liquid film flowing down a porous inclined plane

The nonmodal linear stability of a falling film over a porous inclined plane has been investigated. The base flow is driven by gravity. We use Darcy's law to describe the flow in the porous medium. A simplified one-sided model is used to describe the fluid flow. In this model, the influence of the porous layer on the flow in the film can be identified by a parameter beta. The instabilities of a falling film have traditionally been investigated by linearizing the governing equations and testing for unstable eigenvalues of the linearized problem. However, the results of eigenvalue analysis agree poorly in many cases with experiments, especially for shear flows. In the present paper, we have studied the linear stability of three-dimensional disturbances using the nonmodal stability theory. Particular attentions are paid to the transient behavior rather than the long time behavior of eigenmodes predicted by traditional normal mode analysis. The transient behaviors of the response to external excitations and the response to initial conditions are studied by examining the pseudospectral structures and the energy growth function G(t) Before we study the nonmodal stability of the system, we extend the results of long-wave analysis in previous works by examining the linear stabilities for streamwise and spanwise disturbances. Results show that the critical conditions of both the surface mode and the shear mode instabilities are dependent on beta for streamwise disturbances. However, the spanwise disturbances have no unstable eigenvalue. 2010 American Institute of Physics. [doi:10.1063/1.3455503]

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.