Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

A 275 mu m thick GaN layer was directly grown on the SiO2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-Raman spectroscopy in a cross section of the thick film. The D X-0(A) line with the FWHM of 5.1 meV and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick GaN epitaxial layer. Optically active regions appeared above the SiO2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. The crystalline quality was improved by increasing the thickness of the GaN/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. The x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (ELO) GaN.

Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer

The deep level luminescence of crack-free Al0.25Ga0.75N layers grown on a GaN template with a high-temperature grown AlN interlayer has been studied using spatially resolved cathodoluminescence (CL) spectroscopy. The CL spectra of Al0.25Ga0.75N grown on a thin AlN interlayer present a deep level aquamarine luminescence (DLAL) band at about 2.6 eV and a deep level violet luminescence (DLVL) band at about 3.17 eV. Cross-section line scan CL measurements on a cleaved sample edge clearly reveal different distributions of DLAL-related and DLVL-related defects in AlGaN along the growth direction. The DLAL band of AlGaN is attributed to evolve from the yellow luminescence band of GaN, and therefore has an analogous origin of a radiative transition between a shallow donor and a deep acceptor. The DLVL band is correlated with defects distributed near the GaN/AlN/AlGaN interfaces. Additionally, the lateral distribution of the intensity of the DLAL band shows a domainlike feature which is accompanied by a lateral phase separation of Al composition. Such a distribution of deep level defects is probably caused by the strain field within the domains. (c) 2006 American Institute of Physics.

Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices

The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1x10(-5) Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5x10(-6) or 2.5x10(-6) Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness.

Spatial interference effect of two-photon in femtosecond-pulse pumped spontaneous parametric down-conversion

We have used the transverse correlated properties of the entangled photon pairs generated in the process of spontaneous parametric down-conversion, which is pumped by a femtosecond pulse laser, to perform Young's interference experiment. Unlike the case of a continuous wave laser pump, a broadband pulse laser pump can submerge an interference pattern. In order to obtain a high visibility interference pattern, we used a lens with a tunable focal length and two interference filters to eliminate the effects of the broadband pump laser. It is proven that the process of two-photon direct interference is a post-selection process.

A shortest path algorithm for moving objects in spatial network databases

One of the most important kinds of queries in Spatial Network Databases (SNDB) to support location-based services (LBS) is the shortest path query. Given an object in a network, e.g. a location of a car on a road network, and a set of objects of interests, e.g. hotels,gas station, and car, the shortest path query returns the shortest path from the query object to interested objects. The studies of shortest path query have two kinds of ways, online processing and preprocessing. The studies of preprocessing suppose that the interest objects are static. This paper proposes a shortest path algorithm with a set of index structures to support the situation of moving objects. This algorithm can transform a dynamic problem to a static problem. In this paper we focus on road networks. However, our algorithms do not use any domain specific information, and therefore can be applied to any network. This algorithm’s complexity is O(klog2 i), and traditional Dijkstra’s complexity is O((i + k)2).

a shortest path algorithm for moving objects in spatial network databases

中国计算机学会

网络受限移动对象过去、现在及将来位置的索引

提出了一种适合于网络受限移动对象数据库的动态轨迹R树索引结构(network-constrained moving objects dynamic trajectory R-Tree,简称NDTR-Tree).NDTR-Tree不仅能够索引移动对象的整个历史轨迹,而且能够动态地索引和维护移动对象的当前及将来位置.为了比较相关索引结构及算法的性能,进行了详细的实验.实验结果表明,与现有的基于道路网络的移动对象索引方法如MON-Tree和FNR-Tree等相比,NDTR-Tree有效地提高了对网络受限移动对象动态全轨迹的查询处理性能.