Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

A 10,000 year record of dune activity；dust storms；and severe drought in the central Great Plains

IEECAS SKLLQG

Plio-Quaternary stepwise drying of Asia: Evidence from a 3-Ma pollen record from the Chinese Loess Plateau

IEECAS SKLLQG

Late Quaternary aeolian activity in the Mu Us and Otindag dune fields (north China) and lagged response to insolation forcing

IEECAS SKLLQG

The study of helicon plasma source

Helicon plasma source is known as efficient generator of uniform and high density plasma. A helicon plasma source was developed for investigation of plasma neutralization and plasma lens in the Institute of Modern Physics in China. In this paper, the characteristics of helicon plasma have been studied by using Langmuir four-probe and a high argon plasma density up to 3.9x10(13) cm(-3) have been achieved with the Nagoya type III antenna at the conditions of the magnetic intensity of 200 G, working gas pressure of 2.8x10(-3) Pa, and rf power of 1200 W with a frequency of 27.12 MHz. In the experiment, the important phenomena have been found: for a given magnetic induction intensity, the plasma density became greater with the increase in rf power and tended to saturation, and the helicon mode appeared at the rf power between 200 and 400 W.

A DFT study on isomorphously substituted MCM-22 zeolite

The density functional theory has been used to study the isomorphously substituted MCM-22 zeolite for the first time. The effect of the basis sets on the calculation results is discussed in details. Data of several index properties for characterizing the relative acidity of T-MCM-22 (T = B, Al, Ga, and Fe), including proton affinity, bond length and bond angle, OH stretching frequency, and charge on the acidic proton, show that the acidity of T-MCM-22 increases in the sequence of B-MCM-22 < Fe-MCM-22 < Ga-MCM-22 < Al-MCM-22. After making a correction, the calculated OH stretching frequencies for Al-MCM-22 and Fe-MCM-22 show a reasonable agreement with the experimental data. On the basis of an equilibrium structure of the B-MCM-22 zeolite, the effect of the B element in the synthesis of the Ti-MCM-22 is also discussed. The adding of the B element during the synthesis of the Ti-MCM-22 can decrease greatly the Ti substitution energy because of the forming of a structure quite similar to the terminal silanol group. The results can provide some constructively information for zeolite synthesis.