Wavelength dependence of light-induced domain nucleation in MgO-doped congruent LiNbO3 crystal

Within the wavelength range from 351 to 799 nm, the different reductions of nucleation field induced by the focused continuous laser irradiation are achieved in the 5 mol % MgO-doped congruent LiNbO3 crystals. The reduction proportion increases exponentially with decreasing irradiation wavelength and decreases exponentially with increasing irradiation wavelength. At one given wavelength, the reduction proportion increases exponentially with increasing irradiation intensity. An assumption is proposed that the reduction of nucleation field is directly related to the defect structure of crystal lattice generated by the complex coaction of incident irradiation field and external electric field. (c) 2007 American Institute of Physics.

Judd-Ofelt intensity parameters of Er3+ doped mixed alkali aluminophosphate glasses

Lithium sodium mixed alkali aluminophosphate glasses of the composition xNa(2)O-(15-x)Li2O-4B(2)O(3)-11Al(2)O(3)-5BaO-65P(2)O(5) (where x=0, 3.75, 7.5, 11.25 and 15 mol%) containing 0.5 mol% Er2O3 were prepared by melt quenching. The absorption spectra of Er3+ were studied from the experimental oscillator strengths and the Judd-Ofelt intensity parameters were obtained. The variations of Judd-Ofelt intensity parameters (Omega(2), Omega(4) and Omega(6)), experimental oscillator strengths of certain excited states of Er3+ and hypersensitive band positions with different mixed alkali content have been discussed in detail. It was found that there were similar effects of mixed alkali on both Judd-Ofelt intensity parameter 02 and the experimental oscillator strength of the hypersensitive transition, I-4(15/2) -> H-2(11/2). No shifts in the peak wavelength of the studied transitions were found in different glasses. (c) 2006 Elsevier B.V. All rights reserved.

Ag~+-Li~+离子交换制作Er~(3+)/Yb~(3+)共掺磷酸盐玻璃平面光波导(英文)

制备了化学稳定的Er^3＋／Yb^3＋共掺的磷酸盐玻璃，并在其中制作了用于光放大器和激光器的平面光波导．这种磷酸盐玻璃的失重速率为4．7×10^-5g·cm^-2·hr^-1，小于Kigre公司商业化的磷酸盐玻璃QX／Er的失重速率．采用Ag^＋-Li^＋交换技术制作了平面光波导并用m-线光谱在632．8nm测量了平面光波导的有效折射率．根据反WKB法得到折射率形貌，计算了离子交换参数如：离子交换深度、表面折射率，折射率改变和扩散系数等．

不同退火气氛下γ-LiAlO2形貌和结构研究

研究了温度梯度法生长的γ-LiAlO2晶体在1100℃下富Li气氛和空气中退火处理后的表面形貌、表面结构以及吸收光谱。发现γ-LiAlO2晶体的抛光面在1100℃空气中退火后变为粗糙面，X射线衍射(XRD)分析表明此粗糙面为单相的LiAl5O8。而γ-LiAlO2晶体的抛光面在1100℃富Li气氛中处理后几乎没有变化。同时对不同气氛下热处理的γ-LiAlO2晶体进行了光谱分析，确认了晶片中196nm的吸收峰是由Li空位引起的。

新型衬底材料γ-LiAlO2热稳定性研究

研究了温度梯度法生长的γ-LiAlO2晶体在1100℃不同气氛处理的热稳定性。借助扫描电子显微镜和X射线衍射分析发现：1100℃／10h真空和空气处理后的样品表面分别形成了均匀微孔状和岛状LiAl5O8多晶；而富Li气氛处理后样品表面仍然光滑且仍为LiAlO2。用Leitz大视场显微镜观察重新抛光后样品内部宏观缺陷，发现空气和真空处理后样品缺陷增多，分别为岛状和条纹状缺陷；而富Li气氛处理后样品中缺陷明显减少。对比不同气氛处理的4块样品吸收光谱，确认了真空和空气处理产生的196nm吸收峰可能是Li空位吸收

大尺寸高质量γ-LiAlO2晶体的制备研究

采用提拉法快速（6mm／h）生长了透明、φ45mm×50mm完整的铝酸锂晶体，但晶体中下部出现了一个树状、乳白色的核芯．分别从透明和乳白色核芯部位取样，研磨作粉末X射线衍射测试，发现两个样品所有的衍射峰均可以用γ-LiAlO2指标化．双晶摇摆曲线显示晶体透明和乳白色部位的半高宽分别为116．9arcsec和132．0axcsec，结晶质量较差．通过三步气相传输平衡法（简称VTE）处理后，透明部位半高宽值（FWHM）降至44．2arcsec，乳白色部位FWHM值降至53．3arcsec．结合快速生长和VTE

Structural, optical and electrical properties of ZnO films grown on c-plane sapphire and (100)gamma-LiAlO2 by pulse laser deposition

ZnO thin films were grown on single-crystal gamma-LiAlO2 (LAO) and sapphire (0001) substrate by pulsed laser deposition (PLD). The structural, optical and electrical properties of ZnO films were investigated. The results show that LAO is more suitable for fabricating ZnO films than sapphire substrate and the highest-quality ZnO film was attained on LAO at the substrate temperature of 550 degrees C. However, when the substrate temperature rises to 700 degrees C, lithium would diffuse from the substrate (LAO) into ZnO film which makes ZnO film on LAO becomes polycrystalline without preferred orientation, the stress in ZnO film increases dominantly and the resistivity of the film decreases exponentially. (c) 2005 Elsevier B.V. All rights reserved.

Influence of vapor transport equilibration on the crystal quality and thermal-expansion coefficients of gamma-LiAlO2

gamma-LiAlO2 (LAO) single crystal has been grown by the Czochralski method. However, its quality was deteriorated due to lithium volatilization during the crystal growth. The full width at half maximum value drops from 116.9 to 44.2 arc sec after the LAO slice was treated by vapor transport equilibration at 1000, 1100, and 1200 degrees C/48 h in sequence. The treated slice shows higher optical transmission than the as-grown one in the measured wavelength range of 190-1900 nm, meanwhile, its absorption edge exhibits a blueshift. According to Raman spectra, the treated slice has homogeneous quality at different depths from surface to 0.01 mm. The expansion coefficient of the treated slice for a axis drops from 17.2398x10(-6)/degrees C to 16.5240x10(-6)/degrees C, and that for c axis drops from 10.7664x10(-6)/degrees C to 10.0786x10(-6)/degrees C.

Spectra analysis of a novel Ti-doped LiAlO2 single crystal

LiAlO2 single crystals doped with Ti at concentration 0.2 at.% are grown by the Czochralskl technique with dimensions Phi 42 x 55 mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti: LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the V-Li and V-O absorptions, respectively. The peaks at 716nm and 798nm may stem from the V-Li(+) and F+ absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti4+-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals.

高浓度掺Er^3＋铌酸锂晶体的光谱参数计算

用提拉法成功地生长了6mol％的高浓度掺铒铌酸锂晶体。测量了晶体的两个非偏振方向（X和Z）以及两个偏振方向（π和δ）的吸收光谱。高浓度掺铒铌酸锂晶体的吸收系数高，有利于提高泵浦效率。根据所测的吸收光谱用Judd-Ofelt理论拟合出了Er^3＋离子的强度参数Ωλ。所得的均方差结果显示偏振拟合的误差要小于非偏振拟合。利用偏振吸收数据计算了各能级跃迁的自发辐射跃迁几率（AJJ’）、辐射寿命（τ）、荧光分支比（β）和积分发射截面（σp）等参数，对计算结果进行了讨论并与其他文献的报道结果进行了比较。

Influence of LiB3O5 structure on microstructure and optical properties of ZrO2, thin films prepared by electron beam evaporation

ZrO2 thin films were deposited bill using an electron beam evaporation technique on three kinds of lithium triborate (LiB3O5 or LBO) substrates with the surfaces at specified crystalline orientations. The influences of the LBO structure on the structural and optical properties of ZrO2 thin films are studied by spectrophotometer and x-ray diffraction. The results indicate that the substrate structure has obvious effects on the structural end optical properties of the film: namely. the ZrO2 thin film deposited on the X-LBO, Y-LBO and Z-LBO orients to m(-212), m(021) and o(130) directions. It is also found that the ZrO2 thin film with m(021) has the highest refractive index and the least lattice misfit.

Compensatory growth response in three-spined stickleback in relation to feed-deprivation protocols

Different protocols of food deprivation were used to bring two groups of juvenile three-spined sticklebacks Gaslerosteus aculeatus to the same reduced body mass in comparison with a control group fed daily ad libitum. One group experienced I week or deprivation then 2 weeks on maintenance rations. The second group experienced I week of ad lithium feeding followed by 2 weeks of deprivation. The deprived groups were reduced to a mean mass ore. 80% of controls. The compensatory growth response shown when ad libitum feeding was resumed was independent of the trajectory by which the three-spined sticklebacks had reached the reduced body mass. The compensatory response was Sufficient to return the deprived groups to the mass and length trajectories shown by the control group within 4 weeks. There was full compensation for dry mass and total lipid, but incomplete compensation for lipid-free dry mass. Hyperphagia and increased growth efficiency were present in the re-feeding phase, but there was a lag of a week before the hyperphagia was established. The consistency of the compensatory response of immature three-spined sticklebacks provides a potential model system for the analysis and prediction of appetite and growth in teleosts. (C) 2003 The Fisheries Society of the British isles.

Mechanical and chemical bonding properties of ground state BeH2

The crystal structure, mechanical properties and electronic structure of ground state BeH2 are calculated employing the first-principles methods based on the density functional theory. Our calculated structural parameters at equilibrium volume are well consistent with experimental results. Elastic constants, which well obey the mechanical stability criteria, are firstly theoretically acquired. The bulk modulus B, Shear modulus G, Young's modulus E, and Poisson's ratio upsilon are deduced from the elastic constants. The bonding nature in BeH2 is fully interpreted by combining characteristics in band structure, density of states, and charge distribution. The ionicity in the Be-H bond is mainly featured by charge transfer from Be 2s to H 1s atomic orbitals while its covalency is dominated by the hybridization of H 1s and Be 2p states. The Bader analysis of BeH2 and MgH2 are performed to describe the ionic/covalent character quantitatively and we find that about 1.61 (1.6) electrons transfer from each Be (Mg) atom to H atoms.

Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE

Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire by hydride vapor phase epitaxy (HVPE) are investigated using nanoindentation with a Berkovich indenter, cathodoluminescence (CL), and Raman microscopy. Results show that nonpolar GaN is more susceptible to plastic deformation and has lower hardness than c-plane GaN. After indentation, lateral cracks emerge on the nonpolar GaN surface and preferentially propagate parallel to the < 11 (2) over bar0 > orientation due to anisotropic defect-related stresses. Moreover, the quenching of CL luminescence can be observed to extend exclusively out from the center of the indentations along the < 11 (2) over bar0 > orientation, a trend which is consistent with the evolution of cracks. The recrystallization process happens in the indented regions for the load of 500 mN. Raman area mapping indicates that the distribution of strain field coincides well with the profile of defect-expanded dark regions, while the enhanced compressive stress mainly concentrates in the facets of the indentation.