Enhanced protection against oxidative stress in an astaxanthin-overproduction Haematococcus mutant (Chlorophyceae)

Many unicellular green algae can become yellow or red in various natural habitats due to mass accumulation of a secondary carotenoid, such as lutein, or astaxanthin. The accumulation of secondary carotenoids is generally thought to be a survival strategy of the algae under photo-oxidative stress or other adverse environmental conditions. The physiological role of the carotenoids in stress response is less well understood at the subcellular or molecular level. In this study, a stable astaxanthin overproduction mutant (MT 2877) was isolated by chemical mutagenesis of a wild type (WT) of the green microalga Haematococcus pluvialis Flotow NIES-144. MT 2877 was identical to the WT with respect to morphology, pigment composition, and growth kinetics during the early vegetative stage of the life cycle. However, it had the ability to synthesize and accumulate about twice the astaxanthin content of the WT under high light, or under high light in the presence of excess amounts of ferrous sulphate and sodium acetate. Under stress, the mutant exhibited higher photosynthetic activities than the WT, based on considerably higher chlorophyll fluorescence induction, chlorophyll autofluorescence intensities, and oxygen evolution rates. Cell mortality caused by stress was reduced by half in the mutant culture compared with the WT. Enhanced protection of the mutant against stress is attributed to its accelerated carotenogenesis and accumulation of astaxanthin. Our results suggest that MT 2877, or other astaxanthin overproduction Haematococcus mutants, may offer dual benefits, as compared with the wild type, by increasing cellular astaxanthin content while reducing cell mortality during stress-induced carotenogenesis.

Photodegradation of 2-naphthol in aqueous solutions in the presence of humic acid and ferric ions

In this work, the photodegradation of the carcinogenic pollutant 2-naphthol in aqueous solution containing Aldrich humic acid (HA) and ferric ions (Fe(III)) under 125 W and 250 W high pressure mercury lamp (HPML, lambda >= 365 nm) irradiation was investigated. The photooxidation efficiencies were dependent on the pH values, light intensities and Fe(III)/HA concentration in the water, with higher efficiency at pHs 3-4, and 50 mu mol l(-1) Fe(III) with 20 mg l(-1) HA under 250 W HPML. The initial rate of photooxidation increases with increasing, the initial concentration of 2-naphthol from 10 mu mol l(-1) to 100 mu mol l(-1), while do not change at 50 and 100 mu mol l(-1). However, higher removal efficiency of 2-naphthol is achieved at its lower initial concentration of 10 mu mol l(-1), and initial rate of photooxidation is 0.193 mu mol l(-1) min(-1). Dissolved oxygen (DO) plays an important role in the system containing Fe(III)-HA complexes in which Fenton and photo-Fenton reactions were enhanced in the environment. Hydroxyl radicals produced in HA solution with or without ferric ions were determined by using benzene as free radical scavenger and phenol as scavenging products proportional to hydroxyl radicals. By using UV-Vis and excited fluorescence spectrum techniques, the main photooxidation products, which have higher absorption in the region of 240-340 nm, were found, and the mechanisms for the oxidative degradation is proposed.

Total and subcellular distribution of trace elements in the liver of a mother-fetus pair of Dall's porpoises (Phocoenoides dalli)

Total and subcellular hepatic Zn, Cu, Se, Mn, V, Hg, Cd, and Ag were determined in a mother-fetus pair of Dall's porpoises (Phocoenoides dalli). Except for higher fetal Cu concentration, all maternal elements were higher. Elements existed mostly in the cytosol of both animals except in the case of maternal Ag in the microsome and fetal Cu and Ag in the nuclei and mitochondria. In the maternal cytosol, Zn, Mn, Hg, and Ag were present in the high-molecular-weight substances (HMW); Se and V were present in the low-molecular-weight substances (LMW); Cu and Cd were mostly sequestered by metallothionein (MT). In the fetal cytosol, Zn, Se, Mn, Hg, Cd, and Ag were present in the HMW and V in the LMW, while Cu and Ag were mostly associated with MT. MT isoforms were characterized using the HPLC/ICP-MS. Two and four obvious peaks appeared in the maternal and fetal MT fractions, respectively. The highest elemental ion intensities were at a retention time of 7.8 min for the mother, and for the fetus the peak elemental ion intensities occurred at a retention time of 4.3 min, suggesting that different MT isoforms may be involved in elemental accumulation in maternal and fetal hepatocytosols. (C) 2003 Elsevier Ltd. All rights reserved.

Growth of Potamageton maackianus under low-light stress in eutrophic water

Decline of submersed macrophytes in Lake Donghu of China with the progress of eutrophication is assumedly due to low light stress by algae blooming. I conducted a laboratory experiment to study the impact of low-light stress on the growth of Potamogeton maackianus A. Been, a dominant submersed macrophyte of the lake before the 1970s. Plants were grown for six weeks in aquaria with Lake Donghu sediment and enriched water. Light delivered to aquaria was adjusted to simulate the typical Lake Donghu light intensities that exist at several water depths from 0.6m to 1.7m. Biomass growth of the plant was inversely related to light intensity at the simulated depths of greater than or equal to 1.0m (r = 0.96, p < 0.05, n=6) and was negative at the depths of greater than or equal to 1.4m. These results indicate that photosynthetic light saturation and compensation points of the plant in Lake Donghu should be ca. 0,9m and ca. 1.5m depths, respectively. Chlorophyll content, growth of main shoot, total shoot lengths and density of the plant all peaked at 1.2-1.3m simulated depths. These results indicate that P. maackianus responds to low light stress primarily by elongation of shoots, and increase of density. Its biomass growth and nutrient uptake rate did not correlate with the accelerated shoot growth. Below the light intensities of water deeper than 1.2-1.3m, shoot growth rate decreased. The flexible tolerant strategy of P. maackianus to low-light stress suggests that the disappearance of this plant from the lake was not mainly due to eutrophication-induced low-light stress.

LABORATORY OBSERVATIONS ON THE CIRCADIAN FEEDING PATTERNS IN THE GRASS CARP (CTENOPHARYNGODON-IDELLA VAL) FED 3 DIFFERENT DIETS

Feeding intensities (number of bites per minute) were recorded each hour over a 24-h diel cycle for young grass carp fed three diets. The grass carp did not show distinct meals. Grass carp receiving plant diets (duckweed or elodea) fed almost continuously throughout the 24 h, while fish fed the animal diet (tubificids) ceased feeding or had very low feeding intensities for about a quarter of the diel cycle. The average feeding intensity in fish fed duckweed was three times higher than that in fish fed elodea and tubificids. Average dry matter intake per bite was much higher in fish fed the animal diet than in those fed the plant diets. In most individuals, there was no significant difference in feeding intensity between daytime and nighttime.

Quantum efficiency of GaAs/AlGaAs thin films with two-dimensional photonic crystals

The optical properties of GaAs/AlGaAs thin films with photonic crystals were investigated by measuring their photoluminescence spectra. The spectral intensities, lifetimes, and quantum efficiencies decreased greatly compared with those in blank material without photonic crystals. The quantum efficiencies in the material were also calculated from spectral intensities and lifetimes and the quantum efficiencies calculated from those two methods agreed with each other to some extent.

Characterization of ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metal organic chemical vapour deposition

ZnMgO hexagonal-nanotowers/films grown on m-plane sapphire substrates were successfully synthesized using a vertical low-pressure metal organic chemical vapour deposition system. The structural and optical properties of the as-obtained products were characterized using various techniques. They were grown along the non-polar [1 0 (1) over bar 0] direction and possessed wurtzite structure. The ZnMgO hexagonal-nanotowers were about 200 nm in diameter at the bottom and 120 nm in length. Photoluminescence and Raman spectra show that the products have good crystal quality with few oxygen vacancies. With Mg incorporation, multiple-phonon scattering becomes weak and broad, and the intensities of all observed vibrational modes decrease. The ultraviolet near band edge emission shows a clear blueshift (as much as 100 meV) and broadening compared with that of pure ZnO products.

Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition

Tensile-strained GaAsP/GaInP single quantum well (QW) laser diode (I-D) structures have been grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) and related photoluminescence (PL) properties have been investigated in detail. The samples have the same well thickness of 16 nm but different P compositions in a GaAsP QW. Two peaks in room temperature (RT) PL spectra are observed for samples with a composition larger than 0.10. Temperature and excitation-power-dependent PL spectra have been measured for a sample with it P composition of 0.15. It is found that the two peaks have a 35 meV energy separation independent of temperature and only the low-energy peak exists below 85 K. Additionally, both peak intensities exhibit a monotonous increase as excitation power increases. Analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-hh). A theoretical calculation based oil model-solid theory, taking, into account the spin-orbit splitting energy, shows good agreement with our experimental results. The temperature dependence of PL intensity ratio is well explained using the spontaneous emission theory for e-hh and e-hh transitions. front which the ratio can be characterized mainly by the energy separation between the fill and Ill states.

Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces

p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.

Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (XIBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/III ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm(2)/(V.s) and 3.26 x 10(12)cm(-2) respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47 As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/III ratio, for which the reasons are discussed.

Single-photon emission from a single InAs quantum dot

Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.

Design of high polarization and single-mode photonic crystal laser

The dipole mode in triangular photonic crystal single defect cavity is degenerate. By deforming the lattice in photonic crystal we can obtain non-degenerate dipole modes. Lattice deforming in the whole photonic crystal destroys the characteristic of symmetry, so the distribution of the electromagnetic field is affected and the polarization of the electromagnetic field is also changed. Lattice deforming divides the degenerate dipole mode into the x-dipole mode and the y-dipole mode. It is found that the non-degenerate modes have better properties of polarization. So the high polarization and single dipole mode photonic crystal laser can be achieved by deforming the lattice of photonic crystal. In this paper, we simulated the cavity in photonic crystal slab and mainly calculated the quality factor of x-dipole mode under different deforming conditions and with different filling factors. The properties of polarization of x-dipole and y-dipole modes are also calculated. It is found that the ratio of intensities of E-x to E-y in x-dipole mode and that of E-y to E-x in y-dipole mode are 44 and 27, respectively.

Synthesis and characterization of well-aligned Zn1-xMgxO nanorods and film by metal organic chemical vapor deposition

Well-aligned Zn1-xMgxO nanorods and film with Mg-content x from 0 to 0.051 have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) without any catalysts. The characterization results showed that the diameters and lengths of the nanorods were in the range of 20-80 nm and 330-360 nm, which possessed wurtzite structure with a c-axis growth direction. As the increase of Mg precursor flows into the growth chamber, the morphology of Zn1-xMgxO evolves from nanorods to a film with scale-like surface and the height of the nanorods and the film was almost identical, it is suggested that the growth rate along the c-axis was hardly changed while the growth of six equivalent facets of the type {1 0 (1) over bar 0} of the Zn1-xMgxO has been improved. Photoluminescence and Raman spectra show that the products have a good crystal quality with few oxygen vacancies. With the Mg incorporation, multiple-phonon scattering become weak and broad, and the intensities of all observed vibrational modes decrease. And the ultraviolet near-band-edge emission shows a clear blueshift (x=0.051, as much as 90 meV) and slightly broadening compared with that of pure ZnO nanorods. (C) 2008 Elsevier B.V. All rights reserved.

Sterilization system for air purifier by combining ultraviolet light emitting diodes with TiO2

BACKGROUND: Ultraviolet light emitting diodes (UV LEDs) were used as a light source in TiO2 photocatalysis because of their many advantages, such as, long life, safety, low pollution, etc. In this experiment, a light source panel was successfully fabricated with UV LEDs, the light intensities of which were relatively uniform.

Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes

Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.