A Simple Model For Predicting The Void Fraction Of Gas/Non-Newtonian Fluid Intermittent Flows In Upward Inclined Pipes

In this work, a simple correlation, which incorporates the mixture velocity, drift velocity, and the correction factor of Farooqi and Richardson, was proposed to predict the void fraction of gas/non-Newtonian intermittent flow in upward inclined pipes. The correlation was based on 352 data points covering a wide range of flow rates for different CMC solutions at diverse angles. A good agreement was obtained between the predicted and experimental results. These results substantiated the general validity of the model presented for gas/non-Newtonian two-phase intermittent flows.

Dissipative particle dynamics simulation of wettability alternation phenomena in the chemical flooding process

Wettability alternation phenomena is considered one of the most important enhanced oil recovery (EOR) mechanisms in the chemical flooding process and induced by the adsorption of surfactant on the rock surface. These phenomena are studied by a mesoscopic method named as dissipative particle dynamics (DPD). Both the alteration phenomena of water-wet to oil-wet and that of oil-wet to water-wet are simulated based on reasonable definition of interaction parameters between beads. The wetting hysteresis phenomenon and the process of oil-drops detachment from rock surfaces with different wettability are simulated by adding long-range external forces on the fluid particles. The simulation results show that, the oil drop is liable to spread on the oil-wetting surface and move in the form of liquid film flow, whereas it is likely to move as a whole on the water-wetting surface. There are the same phenomena occuring in wettability-alternated cases. The results also show that DPD method provides a feasible approach to the problems of seepage flow with physicochemical phenomena and can be used to study the mechanism of EOR of chemical flooding.

偏振光飞秒双脉冲微加工

利用具有纳焦能量、高重复频率的偏振光飞秒双脉冲对金属铬膜样品进行微加工,样品表面都会产生微突起状结构,它们的宽度在0～400 ps的双脉冲时延范围内没有明显的变化,但高度却都在1～10 ps的双脉冲时延范围内呈现明显的下降,在此时延范围之外并没有明显的变化。通过加工样品的扫描电子显微镜(SEM)图片发现,对于偏振光,利用双脉冲方法,可以获得更好的加工质量。并且线偏振光得到的微突起状结构比较细长,在入射光束的偏振方向上有所伸长;圆偏振光得到的微突起状结构比较接近圆形。即在低脉冲能量、高重复频率情况下,具体的微加工特征形貌与入射光束的偏振状态有关。

Ultrafast double pulses ablation of Cr film on glass

Ultrafast lasers ablation of Cr film was investigated by using double-pulse method. Experimental results show that there exists a temporal ablation window effect with each of the double pulses adjusted just smaller than the threshold. When the delay between the double pulses is within the order of 400 ps, the ablation of Cr film could happen. When the delay between the double pulses is beyond the order of 400 ps, the ablation of Cr film would not happen, and the reflectivity from the surface of the Cr film shows a sharp rise at the same time. The two-temperature model was developed into the form of double pulses to explain the experimental phenomena. Furthermore, microbump structures were formed on the surface of Cr film after ablation by ultrafast double pulses. Their heights exhibit an obvious drop between 1 and 10 ps double pulses delay, which is involved with the electron-phonon coupling process according to the numerical simulation. These results should be helpful for understanding the dynamic processes during ultrafast lasers ablation of metal films. (C) 2008 Elsevier B.V. All rights reserved.

利用晶体串接实现高效宽带三倍频

从耦合波方程出发,分别在小信号、高功率(1.5 GW/cm2)条件下研究KDP晶体串接三次谐波转换。当两块混频晶体的长度选择为8 mm和6 mm,晶体分别偏离原混频匹配角0.35 mrad和-0.25 mrad时可以有0.3 nm的谐波转换带宽,同时系统的三次谐波转换效率与两块混频晶体之间的距离有密切关系,当两块晶体之间的距离使从第一块混频晶体出射的光波之间的相位差改变π时,会使第一块混频晶体产生的三次谐波大部分回流到基频和倍频光,从而使转换效率大幅度下降,最合适的距离应当使光波之间的相位差改变为2π。

一种制作掺Yb相移光纤光栅激光器的实验方案

采用遮挡法引入相移制作了掺Yb相移光纤光栅(PS-FBG)。在制作光栅的过程中,将其作为激光器的谐振腔,通过监测激光器的输出功率来确定相移大小。当激光器的输出功率开始下降时,停止曝光,此时引入的相移为π/2。为了使光栅的特性尽快稳定下来需要对光栅进行退火,这将导致引入的相移小于π/2。为了弥补退火过程中引起的相移降低,需要对退火后的光栅进行二次曝光,以使光栅的相移恢复π/2。利用该方法制作了一只光纤光栅激光器。当抽运功率为100 mW时,获得了25 mW的输出功率,信噪比(SNR)为60 dB。在1 h内

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Genome 10K: A Proposal to Obtain Whole-Genome Sequence for 10 000 Vertebrate Species

The human genome project has been recently complemented by whole-genome assessment sequence of 32 mammals and 24 nonmammalian vertebrate species suitable for comparative genomic analyses. Here we anticipate a precipitous drop in costs and increase in sequ