Janibacter sp.对活性污泥反应器中二苯并呋喃降解的强化作用及其遗传学分析

二苯并呋喃(DF)是研究二英类化合物生物降解的模式化合物之一。本文报道了一种降解菌Janibacter sp.对活性污泥降解二苯并呋喃的强化作用,以及对其降解基因的分析结果。向反应器中添加5%的降解菌,与活性污泥共同作用,可在48h内将约56mg/L剂量的DF几乎完全降解,提高降解率28%以上。利用PCR方法,克隆和测序分析证明有DF降解基因丛的存在,并且发现以丰富培养基在高温下培养可去除该基因丛;丢失该基因丛的突变株同时失去利用DF作为唯一碳源进行生长的能力,显示其很可能位于一个大质粒上。

Waterborne exposure to PFOS causes disruption of the hypothalamus-pituitary-thyroid axis in zebrafish larvae

Thyroid hormones (THs) play an important role in the normal development and physiological functions in fish. Environmental chemicals may adversely affect thyroid function by disturbing gene transcription. Perfluorooctane sulfonate (PFOS), a persistent compound, is widely distributed in the aquatic environment and wildlife. In the present study, we investigated whether PFOS could disrupt the hypothalamic-pituitary-thyroid (HPT) axis. Zebrafish embryos were exposed to various concentrations of PFOS (0, 100, 200 and 400 mu g L-1) and gene expression patterns were examined 15 d post-fertilization. The expression of several genes in the HIPT system, i.e., corticotropin-releasing factor (CRF), thyroid-stimulating hormone (TSH), sodium/iodide symporter (NIS), thyroglobulin (TG), thyroid peroxidase (TPO), transthyretin (TTR), ioclothyronine deiodinases (Dio1 and Dio2) and thyroid receptor (TR alpha and TR beta), was quantitatively measured using real-time PCR. The gene expression levels of CRF and TSH were significantly up-regulated and down-regulated, respectively, upon exposure to 200 and 400 mu g L-1 PFOS. A significant increase in NIS and Diol gene expression was observed at 200 mu g L-1 PFOS exposure, while TG gene expression was down-regulated at 200 and 400 mu g L-1 PFOS exposure. TTR gene expression was down-regulated in a concentration-dependent manner. Up-regulation and down-regulation of TR alpha and TR beta gene expression, respectively, was observed upon exposure to PFOS. The whole body thyroxine (T-4) content remained unchanged, whereas triiodothyronine (T-3) levels were significantly increased, which could directly reflect disrupted thyroid hormone status after PFOS exposure. The overall results indicated that PFOS exposure could alter gene expression in the HPT axis and that mechanisms of disruption of thyroid status by PFOS could occur at several steps in the synthesis, regulation, and action of thyroid hormones. (C) 2009 Elsevier Ltd. All rights reserved.

Expression pattern, cellular localization and promoter activity analysis of ovarian aromatase (Cyp19a1a) in protogynous hermaphrodite red-spotted grouper

Aromatase plays a key role in sex differentiation of gonads. In this study, we cloned the full-length cDNA of ovarian aromatase from protogynous hermaphrodite red-spotted grouper (Epinephelus akaara), and prepared the corresponding anti-EaCyp19a1a antiserum. Western blot and immunofluorescence studies revealed ovary-specific expression pattern of EaCyp19a1a in adults and its dynamic expression change during artificial sex reversal. EaCyp19a1a was expressed by follicular cells of follicular layer around oocytes because strong EaCyp19a1a immunofluorescence was observed in the cells of ovaries. During artificial sex reversal, EaCyp19a1a expression dropped significantly from female to male, and almost no any positive EaCyp19a1a signal was observed in testicular tissues. Then, we cloned and sequenced a total of 1967 bp T-flanking sequence of EaCyp19a1a promoter, and showed a number of potential binding sites for some transcriptional factors, such as SOX5, GATA gene family, CREB, AP1, FOXL1, C/EBP, ARE and SF-1. Moreover, we prepared a series of 5' deletion promoter constructs and performed in vitro luciferase assays of EaCyp19a1a promoter activities. The data indicated that the CREB regulation region from -1010 to -898 might be a major cis-acting element to EaCyp19a1a promoter, whereas the elements GATA and SOX5 in the region from -1216 to -1010 might be suppression elements. Significantly, we found a common conserved sequence region in the fish ovary-type aromatase promoters with identities from 93% to 34%. And, the motifs of TATA box, SF-1, SOX5, and CREB existed in the region and were conserved among the most of fish species. (C) 2009 Elsevier Ireland Ltd. All rights reserved.

Comparison of the properties of GaN grown on complex Si-based structures

With the aim of investigating the possible integration of optoelectronic devices, epitaxial GaN layers have been grown on Si(Ill) semiconductor-on-insulator (SOI) and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a highly oriented wurtzite structure, a uniform thickness, and abrupt interfaces. The epitaxial orientation is determined as GaN(0001)//Si(111), GaN[1120]//Si[110], and GaN[1010]//Si[112], and the GaN layer is tensilely strained in the direction parallel to the interface. According to Rutherford backscattering/channeling spectrometry and (0002) rocking curves, the crystalline quality of GaN on Si(111) SOI is better than that of GaN on silicide. Room-temperature photoluminescence of GaN/SOI reveals a strong near-band-edge emission at 368 nm (3.37 eV) with a full width at half-maximum of 59 meV. (c) 2005 American Institute of Physics.

High-precision determination of lattice constants and structural characterization of InN thin films

X-ray diffraction and Rutherford backscattering/channeling were used to characterize the crystalline quality of an InN layer grown on Al2O3(0001) Using metal-organic chemical-vapor deposition. A full width at half maximum of 0.27 degrees from an InN(0002) omega scan and a minimum yield of 23% from channeling measurements show that this 480-nm-thick InN layer grown at low temperature (450 degrees C) has a relatively good crystalline quality. High-resolution x-ray diffraction indicates that the InN layer contains a small fraction of cubic InN, besides the predominant hexagonal phase. From this InN sample, the lattice constants a=0.353 76 nm and c=0.570 64 nm for the hexagonal InN and a=0.4986 nm for the cubic InN were determined independently. 2 theta/omega-chi mapping and a pole figure measurement revealed that the crystallographic relationship among the cubic InN, the hexagonal InN, and the substrate is: InN[111]parallel to InN[0001]parallel to Al2O3[0001] and InN{110}parallel to InN{1120}parallel to Al2O3{1010}, and that the cubic InN is twinned. Photoluminescence measurements indicate that the band-gap energy of this sample is approximately 0.82 eV. (c) 2006 American Vacuum Society.

Modulation spectroscopy of GaAs covered by InAs quantum dots

Contactless: electroreflectance has been employed at room temperature to study the Fermi level pinning at undoped-n(+) GaAs surfaces covered by 1.6 and 1.8 monolayer (ML) InAs quantum dots (QDs). It is shown that the 1.8 ML InAs QD moves the Fermi level at GaAs surface to the valence band maximum by about 70 meV compared to bare GaAs, whereas 1.6 ML InAs on GaAs does not modify the Fermi level, It is confirmed that the modification of the 1.8 ML InAs deposition on the Fermi level at GaAs surface is due to the QDs, which are surrounded by some oxidized InAs facets, rather than the wetting layer.

Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers

On the basis of integrated intensity of rocking curves, the multiplicity factor and the diffraction geometry factor for single crystal X-ray diffraction (XRD) analysis were proposed and a general formula for calculating the content of mixed phases was obtained. With a multifunction four-circle X-ray double-crystal diffractometer, pole figures of cubic (002), {111} and hexagonal {1010} and reciprocal space mapping were measured to investigate the distributive character of mixed phases and to obtain their multiplicity factors and diffraction geometry factors. The contents of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {1010} and {1011}.

聚烯烃弹性体改性尼龙及其共混体系形态、结构与性能

一种新型的聚烯烃弹性体（乙烯-α-烯烃共聚物）EOCP，在引发剂过氧化二异丙苯(DCP)的作用下，与马来酸酐(MA)发生接枝反应，实现了EOCP的官能化，MA的接枝率在0.13～0.92wt%之间。对于弹性体改性尼龙1010 (PA1010)体系，膜抽提实验，间接证实了原位接枝产物PA1010-g- (MA-g-EOCP)的形成。弹性体含量为15wt%时，PA1010/EOCP-g-MA共混物的缺口冲击强度、断裂伸长率、熔体流动速率值在接枝率为0.51wt%处均出现极值；接枝率为0.30～0.51wt%是增韧尼龙的最佳范围；分散相的平均粒径与弹性体的接枝率成反比。少量的接枝弹性体（约12wt%，接枝率为0.51wt%）即能实现PA1010的脆韧转变；形态分析表明，EOCP改性PA1010体系，分散相的平均粒径与其含量成正比，而EOCP-g-MA改性PA1010体系，分散相的平均粒径几乎与其含量无关。WAXD、偏光显微镜及DSC研究表明：EOCP对PA1010的晶型不产生影响；EOCP-g-MA作为异相成核剂，使PA1010球晶向细晶化方向发展，而且随着接枝弹性体含量的增多而加强；DSC分析进一步证实了接枝弹性体促进了PA1010的结晶。EOCP-g-MA是制备PA6/PP合金的一种高效增容剂和改性剂；形态分析显示：EOCP-g-MA改善了尼龙相与聚丙烯相之间的相容性；相对于纯弹性体，接枝弹性体改性的PA6/PP共混体系，形成PA6与PP的共连续相结构，要求组分中有更多的PA6。

尺寸诱导的聚合物亚稳结晶

亚稳定性是凝聚态物质的一个重要特征。常温常压下，热力学上不稳定的、而实际上存在的相，都可称之为亚稳相。通常，影响物质亚稳态存在的外界因素有温度、压力、电场、磁场等等，而相态本身的大小也是决定它稳性的一个重要因素，这就是所谓的尺寸效应。随着纳米技术和微处理器技术的飞速发展，材料的应用尺寸日趋于小型化和微型化。研究聚合物相行为和相变中的尺寸效应，对于充分理解高分子凝聚态物理学的基本问题具有极度其重要的科学意义，它还为纳米科技中材料特殊的结构和性能提供新的认识途径和理论基础，这必将极度大地促进纳米材料的实用化进程。本文正是基于这样一种相变中的尺寸效应，选用了三种具有多晶型结构的结晶聚合物，聚偏氟乙烯（PVDF），聚反式1,4-丁二烯（TPBD）和尼龙1010（nylon 1010），对它们的晶体结构及其相转变过程和转变条件作了较详细的研究，着重探讨了各种晶型稳态和亚稳态的存在条件。在这三种聚合物当中，发现小尺寸晶体趋向于形成二维高有序的六方或拟六方堆积结构，成功地证明了晶体结构对尺寸的依赖性。在上述研究中，首次成功地为PVDF营造了不同程度的空间受限结晶环境，得到了尺寸小于100纳米受限结晶的亚稳态β晶；通过结合使用常温和低温的电子衍射术，并利用计算机模拟技术，提出了尺寸影响的TPBD相转变的具体实现过程；发现了培养尼龙1010单晶的另一理想溶剂二甲基甲酰胺（DMF），并首次用它培养出十分完善的单晶体；引入尺寸效应的观点来解释尼龙1010的Brill转变现象，定量地确定了基转变温度对尺寸的依赖关系，为解释这一古老但至仿仍存在极大争议的尼龙中特有的转变现象开辟了创造性的思维方式；首次用极度稀溶液喷雾法获得了尼龙1010的纳米和微米级微纤维晶，并解释了它的形成原因。

聚氨酯弹性体/蒙脱土纳米复合材料的制备与性能

本论文分别以尼龙11、PP-MA-1001, pp-MA-1010作为增容剂，采用熔融插层法制备了聚氨酷弹性体／蒙脱土复合材料；并采用XRD, TEM, DSC、FTIR,TGA等手段进行表征。结果表明：以尼龙11为增容剂制备的复合材料中，硅酸盐片层聚集体以微米级分散；以PP-MA-1001为增容剂，硅酸盐片层聚集体以100-400nm均匀分散；以pp-MA-1010为增容剂，硅酸盐片层聚集体以10-1OOnm均匀分散。在熔融插层的研究中我们发现，导致硅酸盐片层在聚氨酷基体中剥离开来而又均一分散的影响因素有两个：(1)增容剂的插层能力；(2)增容剂与聚氨醋弹性体的相容性。MA的含量是影响PP-MA增容作用的关键因素。力学性能测试及DMA结果表明，以PP佩MA-1010为增容剂制备的复合材料储能模量在-50℃以上有了全面提高，且断裂伸长率基本保持。为了加强对比，我们又以四氢吠喃为溶剂，采用溶液插层法制备了聚氨酷弹性体／蒙脱土复合材料，结果表明，硅酸盐片层聚集体在聚氨醋基体中以纳米级分散，复合材料拉伸模量提高两倍，断裂伸长率提高一倍。

Waterborne exposure to PFOS causes disruption of the hypothalamus-pituitary-thyroid axis in zebrafish larvae

Thyroid hormones (THs) play an important role in the normal development and physiological functions in fish. Environmental chemicals may adversely affect thyroid function by disturbing gene transcription. Perfluorooctane sulfonate (PFOS), a persistent compound, is widely distributed in the aquatic environment and wildlife. In the present study, we investigated whether PFOS could disrupt the hypothalamic– pituitary–thyroid (HPT) axis. Zebrafish embryos were exposed to various concentrations of PFOS (0, 100, 200 and 400 lg L 1) and gene expression patterns were examined 15 d post-fertilization. The expression of several genes in the HPT system, i.e., corticotropin-releasing factor (CRF), thyroid-stimulating hormone (TSH), sodium/iodide symporter (NIS), thyroglobulin (TG), thyroid peroxidase (TPO), transthyretin (TTR), iodothyronine deiodinases (Dio1 and Dio2) and thyroid receptor (TRa and TRb), was quantitatively measured using real-time PCR. The gene expression levels of CRF and TSH were significantly up-regulated and down-regulated, respectively, upon exposure to 200 and 400 lg L 1 PFOS. A significant increase in NIS and Dio1 gene expression was observed at 200 lg L 1 PFOS exposure, while TG gene expression was down-regulated at 200 and 400 lg L 1 PFOS exposure. TTR gene expression was down-regulated in a concentration-dependent manner. Up-regulation and down-regulation of TRa and TRb gene expression, respectively, was observed upon exposure to PFOS. The whole body thyroxine (T4) content remained unchanged, whereas triiodothyronine (T3) levels were significantly increased, which could directly reflect disrupted thyroid hormone status after PFOS exposure. The overall results indicated that PFOS exposure could alter gene expression in the HPT axis and that mechanisms of disruption of thyroid status by PFOS could occur at several steps in the synthesis, regulation, and action of thyroid hormones.

Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.