A novel line-order of InAs quantum dots on GaAs

A novel line-order of InAs quantum dots (QDs) along the [1, 1, 0] direction on GaAs substrate has been prepared by self-organized growth. After 2.5 monolayer InAs deposition, QDs in the first layer of multi-layer samples started to gather in a line. Owing to the action of strong stress between layers, almost all the dots of the fourth layer gathered in lines. The dots lining up tightly are actually one-dimensional superlattice of QDs, of which the density of electronic states is different from that of isolated QDs or quantum wires. The photoluminescence spectra of our multi-layer QD sample exhibited a feature of very broad band so that it is suitable for the active medium of super luminescent diode. The reason of dots lining up is attributed to the hill-and-valley structure of the buffer, anisotropy and different diffusion rates in the different directions on the buffer and strong stress between QD layers. (C) 2002 Published by Elsevier Science B. V.

Characteristics of triangle and square InP/InGaAsP microlasers

Directional emission triangle and square InGaAsP/InP lasers have been fabricated by standard photolithography, inductively coupled plasma etching technique combined with wet chemical etching process. In this article, the characteristics of the microcavity lasers are presented. For an equilateral triangle microcavity laser with the side length of 30 mu m, we got the laser spectra fitted very well with the mode wavelength formulate LIP to the 8(th) transverse mode at room temperature. But the laser spectra are usually more complex than the formulae for the lasers, especially for the lasers with a smaller side length. For a square microcavity laser with side length of 20 mu m, we observed the mode competition between the Fabry-Perot (FP) modes and Whispering-Gallery (WG) modes at 200K. The output spectra below the threshold have the mode interval of FP modes with a large mode interval, and the laser spectra agree very well with the WG modes, which have mode interval less than the FP modes. The output spectra are dominated by the FP modes below the threshold, because the FP modes have a higher output coupling efficiency than the WG modes.

Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)

The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.

玉米根系吸水能力细胞水平的杂种优势

在人工气候室水培条件下,以玉米(ZeamaysL.)杂交种F1代户单4号及其母本天四和父本478为材料,用细胞压力探针技术研究了正常供水和PEG-6000模拟–0.2MPa水分胁迫条件下,玉米根皮层细胞水分关系参数的基因型差异。结果表明,根皮层细胞的直径、长度和体积均为F1代>母本>父本;正常供水条件下3个玉米品种的根皮层细胞膨压均在0.6MPa左右且品种间差异不显著,水分胁迫抑制了细胞的延伸生长且F1代和母本的细胞膨压显著高于父本;根皮层细胞壁体积弹性模量均为父本>母本>F1代,水分胁迫条件下的品种间差异显著;与正常供水条件相比,水分胁迫条件下细胞膨压显著降低,而弹性模量则大幅度提高;在两种水分条件下,水分跨细胞膜运转的半时间均为父本>母本>F1代,且半时间在水分胁迫条件下均显著高于正常供水条件下;HgCl2处理引起了半时间的延长,2-巯基乙醇则部分逆转了HgCl2的效应;在两种水分条件下,根皮层细胞水导均为F1代>母本>父本且品种间差异显著,水分胁迫则显著降低了细胞水导。试验证明杂交种F1代的细胞水平根系吸水能力优于亲本,体现了杂种优势。

中国都江堰汉族人群IIS信号通路基因的遗传变异与长寿的相关性研究

随着人口老龄化的发展，对衰老和长寿的研究越来越受到关注。科学家们希望找到衰老相关疾病的致病机理以及治疗手段，从而降低这些疾病的发病风险，减少社会和经济负担。长寿老人受衰老相关疾病的困扰相对较少，自然成为研究的热点人群。而由于长寿的遗传力相对较高，关于长寿的遗传学研究也成为这个领域的热点之一。作为在从无脊椎动物到脊椎动物中一条非常保守的信号通路，胰岛素/胰岛素样生长因子1（IIS）信号通路是一条与生长发育代谢密切相关的信号通路。同时，在模式生物的研究中发现，减弱这条信号通路会导致模式生物寿命的延长。而在人类群体的相关性研究中，这条通路上一些基因的遗传变异位点与长寿、血清胰岛素样生长因子1（IGF1）水平以及一些衰老相关疾病如糖尿病、癌症和心脑血管疾病相关。为了探讨IIS信号通路上一些基因的遗传变异与长寿的关系，本研究在中国四川省都江堰市招募了共493名无相互关系的长寿老人，其中男性252人，年龄均大于90岁，女性241人，年龄均大于94岁。同时，在该地区招募了442名年轻的对照个体，年龄在22岁到73岁之间。我们对IIS信号通路上的一些基因的遗传变异位点利用测序，片段分析，RFLP等方法进行了扫描。包括（1）IGF1基因启动子区域及内含子1中的一个微卫星位点；（2）IGF1R基因外显子序列中的4个变异位点，包括3个SNP和一个2碱基缺失位点；（3）FOXO3A基因内含子1中的3个SNP位点。本研究发现，在该人群中，IGF1基因启动子区域的遗传变异与长寿没有相关性，但携带该区域中的微卫星位点18/21基因型的男性个体在长寿群体中所占比例高于在对照群体中所占的比例(11.11 vs. 5.45%, p=0.011)。虽然经过多重检验校正后显著性消失了，但考虑到这个位点曾被报道与多种衰老相关疾病相关，因此，这个位点不是影响长寿的潜在功能位点，但有可能与真正的潜在功能位点相连锁，这一观点有待进一步研究的验证。本研究并没有发现IGF1R基因外显子序列中的遗传变异与长寿存在相关性。同时，研究结果支持FOXO3A基因的遗传变异与长寿相关，这样，继日籍美国人，德国人，意大利人群体后，在中国汉族人群中也证实了这一结果。同时，在FOXO3A基因上的一个未报道过的单核苷酸多态性（SNP）位点（109080595）在本研究中被发现，携带这个基因突变纯和基因型的个体仅在长寿人群中出现（8/492 vs. 0/414, 基因型分布差异p值为0.011）。关于FOXO3A基因的功能以及新发现位点在其他群体中的基因型分布情况值得进一步深入研究。综上所述，本研究第一次在中国汉族人群中对IIS信号通路的一些基因的遗传变异与长寿的相关性进行了探讨，更多群体及更大样本量的研究有助于加深对长寿遗传机制的认识。

琼东南盆地新生代发育机制的模拟研究

琼东南盆地是南海西北陆缘上一个北东走向的伸展裂陷带,向西与北西走向的莺