133 resultados para 7039-111


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The crystal structure of Er(PM)(3)(TP)(2) [PM = 1-Phenyl-3-methyl-4-isobutyryl-5-pyrazoloiie, TP = triphenyl phosphine oxide] was reported and its photoluminescence properties were studied by UV-vis absorption, excited, and emission spectra. The Judd-ofelt theory was introduced to calculate the radiative transition rate and the radiative decay time of 3.65 ms for the I-4(13/2) -> I-4(15/2) transition of Er3+ ion in this complex.

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The replacement of coronene monolayer on Au (111) by 6-mercapto-1-hexanol (MHO) was studied by in situ scanning tunneling microscopy (STM) in solutions. It was found that the rate of replacement depends strongly on the concentration of MHO. The replacement finished within a second at a higher concentration of MHO. At a lower concentration, the slow replacement could be followed by in situ STM. The replacement occurred initially near the elbow position of reconstructed Au (111) with the formation of pits in a single or several missing molecules. With the proceeding of replacement, these small pits expanded, and the surrounding coronene molecules were gradually substituted by MHO, which developed into ordered domains within a spatial confined environment. Meanwhile, the reconstruction of Au (111) was lifted. The replacement expanded fast along the reconstruction lines in the domain. For the fast replacement, a (root 3 x root 3) R30 degrees adlattice was observed, while a c(4 x 2) superlattice was observed for the slow replacement.

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用循环伏安法(CV)和电化学扫描隧道显微镜(ECSTM)在HClO4溶液中研究了配对碱基腺嘌呤(Adenine,A)与胸腺嘧啶(Thymine,T)在Au(111)电极上的共吸附行为。CV曲线表明,A和T的电化学共吸附行为更接近于A的电化学吸附行为。高分辨STM图像显示,在物理吸附区域碱基A和T分子之间通过氢键作用形成一种不同于单组分的网络结构。根据STM图像提出一个可能的模型,并给出了在Au(111)电极上共吸附时A和T分子之间可能的氢键作用方式。

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利用导电原子力显微镜在烷基化自组膜/Si(111)和巯基自组膜/Au(111)上加工纳米模板,结合组装的方法构建功能化纳米图案。在烷基化自组膜/Si(111)上施加偏压可以得到SiO2纳米图案,此图案可以做功能化模板,将图案化区域组装胺基作为端基的硅烷后,通过1-乙基-3-(3-二甲基氨基丙基)碳二亚胺盐酸盐(EDC)/N-羟基琥珀酰亚胺(NHS)试剂活化共价结合11-巯基十一酸(MUA)稳定的金纳米粒子,得到金纳米粒子功能化纳米图案。在烷基硫醇自组装膜/Au(111)施加偏压可以选择性移除自组装膜,移除自组装膜后新暴露的金可以用做纳米模板,在此模板上组装MUA后通过EDC/NHS活化共价键合溶菌酶,得到蛋白质功能化的纳米点阵图案。

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Large-scale, uniform plasmid deoxyribonucleic acid (DNA) network has been successfully constructed on 11-mercaptoundecanoic acid modified gold (111) surface using a self-assembly technique. The effect of DNA concentration on the characteristics of the DNA network was investigated by atomic force microscopy. It was found that the size of meshes and the height of fibers in the DNA network could be controlled by varying the concentration of DNA with a constant time of assembly of 24 h.

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Atomic force microscope (AFM)-based scanned probe oxidation (SPO) nanolithography has been carried out on an octadecyl-terminated Si(111) surface to create dot-array patterns under ambient conditions in contact mode. The kinetics investigations indicate that this SPO process involves three stages. Within the steadily growing stage, the height of oxide dots increases logarithmically with pulse duration and linearly with pulse voltage. The lateral size of oxide dots tends to vary in a similar way. Our experiments show that a direct-log kinetic model is more applicable than a power-of-time law model for the SPO process on an alkylated silicon in demonstrating the dependence of oxide thickness on voltage exposure time within a relatively wide range. In contrast with the SPO on the octodecysilated SiO2/silicon surface, this process can be realized by a lower voltage with a shorter exposure time, which will be of great benefit to the fabrication of integrated nanometer-sized electronic devices on silicon-based substrates. This study demonstrates that the alkylated silicon is a new promising substrate material for silicon-based nanolithography.

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Scanned probe oxidation (SPO) nanolithography has been performed with an atomic force microscope (AFM) on an octadecyl-terminated silicon (111) surface to create protuberant oxide line patterns under ambient conditions in contact mode. The kinetic investigations of this SPO process indicate that the oxide line height increases linearly with applied voltage and decreases logarithmically with writing, speed. The oxide line width also tends to vary with the same law. The ambient humidity and the AFM tip state can remarkably influence this process, too. As compared with traditional octadecylsilated SiO2/Si substrate, such a substrate can guarantee the SPO with an obviously lowered voltage and a greatly increased writing speed. This study demonstrates that such alkylated silicon is a promising silicon-based substrate material for SPO nanolithography.