温度对草鱼能量收支的影响

于1992年4月-1992年5月在22，26及3℃下，以莴苣叶为食物，不限量摄食，测定草鱼的能量收支。结果表明，草鱼摄食率及生长率均随温度上升而增加；最大摄食率（Cw：％　W／d）与水温（T：℃）的关系为：CW=0．0405T2.324；温度对食物能分配于能量收支各组分的比例没有显著影响，在3个温度下测定的平均能量收支式为：100C=29.89F＋3．30U＋52．48R十14．34G，式中C为食物能，F为排粪能，U为排泄能，R为代谢能，G为生长能。

白暨豚某些内科疾病的防治

白暨豚某些内科疾病的防治刘仁俊，赵庆中（中国科学院水生生物研究所，武汉４３００７２）ＳＴＵＤＹＯＮＴＨＥＰＲＥＶＥＮＴＩＯＮＡＮＤＴＲＥＡＴＭＥＮＴＯＦＳＯＭＥＩＮＴＥＲＮＡＬＤＩＳＥＡＳＥＳＩＮＬＩＰＯＴＥＳ￥ＬｉｕＲｅｎｊｕｎａｎｄＺｈａｏＱｉｎ...

Fast-growing transgenic common carp mounfing compensatory growth

Compensatory growth is a phase of accelerated growth apparent when favourable conditions are restored after a period of growth depression. To investigate if F-2 common 'all-fish' growth hormone gene transgenic common carp (Cyprinus carpio) could mount compensatory growth, a 9 week study at 29 degrees C was performed. The control group was fed to satiation twice a day throughout the experiment. The other two groups were deprived of feed for 1 or 2 weeks, respectively, and then fed to satiation during the re-feeding period. At the end of the experiment, the live masses of fish in the deprived groups were still significantly lower than those of the controls. During the re-feeding period, size-adjusted mean specific growth rates and mean feed intakes were significantly higher in the deprived fish than in the controls, indicating a partial compensatory growth response in these fish. No significant differences were found in food conversion efficiency between the deprived and control fish during re-feeding, suggesting that hyperphagia was the mechanism responsible for increased growth rates. The proximate composition of the deprived fish at the end of the experiment was similar to that of the control fish. This study is, to our knowledge, the first to report that fast-growing transgenic fish can achieve partial compensation of growth following starvation. (c) 2007 The Authors Journal compilation (c) 2007 The Fisheries Society of the British Isles.

RecA-mediated, targeted mutagenesis in zebrafish

We have evaluated the efficacy of RecA, a prokaryotic protein involved with homologous recombination, to direct site-specific mutagenesis in zebrafish embryos. For this we coinjected a vector containing a mutated enhanced green fluorescent protein (EGFP) gene plus 236-nucleotide corrective single-stranded DNAs coated with RecA into I-cell zebrafish embryos. Twenty-hours after fertilization, about 5% to 20% of injected embryos showed EGFP expression in I or more cells when RecA-coated corrective DNAs were used, but not when RecA was omitted. Mutated EGFP genes with 1-bp insertions or deletions were inefficiently activated, whereas those with 7-bp insertions were activated about 4-fold more efficiently. RecA-coated template strand had a higher efficiency than its complementary strand in activation of EGFP expression. Prior irradiation of the embryos with UV light enhanced RecA-mediated restoration of gene activity, suggesting that the effects we observed were augmented by one or more factors of zebrafish DNA repair systems.

An optimized design of a fiber optic hydrophone based on a flat diaphragm and multilayer fiber coils: A theoretical approach

In this paper, we present a theoretical approach to optimize the design of a fiber optic hydrophone based on a flat diaphragm and multilayer fiber coils. In this theoretical analysis, both the radial and tangential strain induced fiber length changes are taken into account. The result shows that the position of the fiber coils and the number of the fiber layers have significant effects on the sensitivity, of the hydrophone. By optimizing these parameters, a higher sensitivity can be achieved. Sample hydrophones are fabricated and tested. The experimental result is in good agreement with the theoretical result, which shows this theoretical approach is effective in optimizing the design of the fiber optic hydrophone. (C) 2008 Elsevier Ltd. All rights reserved.

Photoluminescence of low-dimensional semiconductor structures under pressure

Photoluminescence of some low-dimensional semiconductor structures has been investigated under pressure. The measured pressure coefficients of In0.55Al0.45 As/Al0.5Ga0.5As quantum dots with average diameter of 26, 52 and 62 nm are 82, 94 and 98 meV/GPa, respectively. It indicates that these quantum dots are type-I dots. On the other hand, the measured pressure coefficient for quantum dots with 7 nm in size is -17meV/GPa, indicating the type-II character. The measured pressure coefficient for Mn emission in ZnS:Mn nanoparticles is -34.6meV/GPa, in agreement with the predication of the crystal field theory. However, the DA emission is nearly independent on pressure, indicating that this emission is related to the surface defects in ZnS host. The measured pressure coefficient of Cu emission in ZnS: Cu nanoparticles is 63.2 meV/GPa. It implies that the acceptor level introduced by Cu ions has some character of shallow level. The measured pressure coefficient of Eu emission in ZnS:Eu nanoparticles is 24.1 mev/GPa, in contrast to the predication of the crystal field theory. It may be due to the strong interaction between the excited state of Eu ions and the conduction band of ZnS host.

Subtraction of scattering parameters for small-signal modulation characteristics of laser diode

An extended subtraction method of scattering parameters for characterizing laser diode is proposed in this paper. The intrinsic response is extracted from the measured transmission coefficients of laser diode, and the parasitics of packaging net-work laser chip are determined from the measured reflection coefficient of laser diode simultaneously. It is shown that the theories agree well with the experimental results.

ECR plasma in growth of cubic GaN by low pressure MOCVD

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs (001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (similar to600degreesC) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity,coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.

Characterization of CdSe and CdSe/CdS core/shell nanoclusters synthesized in aqueous solution

CdSe nanoclusters overcoated with CdS shell were prepared with macapoacetic acid as stabilizer. The optical properties of CdSe nanoclusters and the influence of CdS shell on the electronic structures of CdSe cores were studied by optical absorption, photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Based on PL and PLE results and the theoretical calculation on fine structure of bandedge exciton, a model of formation of excimer within the small clusters was proposed to explain the large Stokes shift of luminescence from absorption edge observed in PL results. (C) 2000 Elsevier Science B.V. All rights reserved.

TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy

A ZnTe layer grown on GaAs substrate by hot-wall epitaxy (HWE) was studied using transmission electron microscopy (TEM). For a (110) cross-sectional specimen, its (001) ZnTe/GaAs interface was analysed by large angle stereo-projection (LASP) and high resolution electron microscopy (HREM). In the LASP, a double diffraction occurred and moire fringes were formed, meanwhile misfit dislocations were revealled clearly by weak beam technique. In HREM, not only Lomer and 60 degrees types of misfit dislocations were observed, but also two types of stacking faults were analysed. The residual strain was estimated by both methods.

Research of Face Location System Based on Human Vision Simulations

In this paper we present a robust face location system based on human vision simulations to automatically locate faces in color static images. Our method is divided into four stages. In the first stage we use a gauss low-pass filter to remove the fine information of images, which is useless in the initial stage of human vision. During the second and the third stages, our technique approximately detects the image regions, which may contain faces. During the fourth stage, the existence of faces in the selected regions is verified. Having combined the advantages of Bottom-Up Feature Based Methods and Appearance-Based Methods, our algorithm performs well in various images, including those with highly complex backgrounds.

程序静态分析技术与工具

静态分析对于保证程序质量,提高软件生产率有重要的意义.本文综述了静态分析常用的策略,介绍了当前静态分析的研究现状,比较了目前已有的静态程序分析工具.

基于工作流管理的连续补货系统的设计与实现

VMI是供应链管理中一种先进的库存管理策略,连续补货系统则是VMI的主要支撑技术之一。介绍了一个连续补货系统的具体设计与实现,并且介绍了其中利用到的主要技术———工作流管理。