丙型肝炎病毒(HCV)株的全基因组序列测定: 完成HCV 基因型6 全套17 个亚型基因组的测序

丙型肝炎病毒（Hepatitis C virus, HCV）的全基因组序列测定，曾经由于许多方面 的条件限制而难于完成。但是，其对于研究HCV 分子病毒学、流行病学、进化和致 病性却至关重要，特别是在临床应用中，不同序列的基因型决定α-干扰素治疗的不同 效果。在本研究完成之前，HCV 基因型6 仅有6 个亚型有其全基因组序列。因此， 本研究的主要目的在于，测定HCV 变异株代表基因型6 其余的11 个亚型和新亚型的 全基因组序列，并深入分析。 本研究从样品分别来自于中国、泰国，和在美国及加拿大生活的东南亚国家移民 的HCV 感染者。因为样品有限，改良传统的PCR 方法，摸索出“桥”和“岛”DNA 全序列扩增法，从每例样品100μl 血清或从100μl 血清中获得的cDNA 中测定了13 个HCV 全基因组核苷酸序列。 以来源于Genbank 的已知基因型6 的七个全长序列为参考对所测定的13 个亚型 全序列进行共同分析显示，这些全基因组核苷酸的两两比较相似率变化范围为 71.9%--82.7%，著地， 这四对序列间的相同率高于标准定义的HCV 基因亚型之间的 范围值75%-80%。为了进一步理解和证实这些亚型间的遗传相似性，本研究还测定 了代表这4 对亚型的病毒原型株的全基因序列，结果显示了相同的核苷酸水平上的变 异范围，这为HCV 基因亚型的分类提供了新的认识，亦强调了全长序列对于分类的 重要性。 从系统发育方面的分析证实，本研究所测得的13 个分离株都属于基因型6。在系 统发育树上，每个病毒株代表一个独立的枝。并形成了高度分化的HCV 基因型6 分 枝，从而清楚显示，各亚型的独立分布。本研究至此完成了基因型6 中17 个亚型的 全序列测定，而km41 和gz52557 因缺乏其临床上和流行病学上的多个感染病例的证 实，而继续保留其亚型未命名状态。结合来源于Los Alamos HCV database 的基因型6 的已知部分序列的变异株进一步分析，发现各相近亚型变异株均来自东南亚或东南亚国家移民，这提示了这些HCV 的相同感染源。 为了探讨HCV 夫妻间传播的可能性，本研究还测定了来自于泰国的两位感染 HCV 的献血员及其感染HCV 的配偶。这4 个基因序列C-0044 和C-0046 之间核苷 酸相同率为98.1%，而C-0185 和 C-0192 之间为97.8%。文献研究感染HCV 的夫妇 间的部分亚基因序列的相同率为96.3%至100%，本研究结果与此范围相符，并第一 次用全基因组序列提示了HCV 在夫妻间传播的可能性。 本研究还测定了基因型6 的另一个变异株的全基因组序列：HK6554，香港的某患 者，与上文中的GX004 一起，均为静脉吸毒者，并共同感染了HCV 和HIV-1。分析 结果还表明了一种趋势，即是在中国南方，基因亚型6e 有从以前的地方性传播方式 转为现有的流行性传播方式。这种转变可能由于静脉吸毒感染HCV 的人群的网络传 播而加快。 综上，本研究用传统PCR、简并引物结合链特异引物的方法有效地测定了共21 个病毒株的全基因序列。该方法也可用于其它分子流行病学的研究，特别在测定珍贵 的病毒序列然而样品量又受限时。本研究所测定的全基因组序列代表HCV 中最古老、 分化最多、地方性传播、又可能动物源性的基因型6 的全套17 个亚型。这有助于进 一步理解HCV 基因亚型的分类意义、更准确评价HCV 的进化和起源，亦有助于发 现HCV 新的变异株和提高临床诊断、治疗，为将来HCV 的流行及公众健康的预测、 预防和疫苗的制备奠定了坚实的分子遗传学基础。

On-Chip All-Optical Passive 3.55 Gbit/s NRZ-to-PRZ Format Conversion Using a High-Q Silicon-Based Microring Resonator

We report the experimental result of all-optical passive 3.55 Gbit/s non-return-to-zero (NRZ) to pseudo-return-to-zero (PRZ) format conversion using a high-quality-factor (Q-factor) silicon-based microring resonator notch filter on chip. The silicon-based microring resonator has 23800 Q-factor and 22 dB extinction ratio (ER), and the PRZ signals has about 108 ps width and 4.98 dB ER.

Photoluminescence studies of GaAs/AlGaAs single quantum well intermixed by Ga+ ion implantation

Ga(+)ion implantation followed by rapid thermal annealing (RTA) was used to enhance the interdiffusion in GaAs/AlGaAs single Quantum Wells(SQWs). The extent of intermixing was found to be dependent on the well depth, number of implanted ions and annealing time. A very fast interdiffusion process occurs at the initial annealing stage. After that, the enhanced diffusion coefficient goes back to the umimplanted value. We propose a two-step model to explain the diffusion process as a function of the annealing time : a fast diffusion process and a saturated diffusion process. The interdiffusion coefficient of the fast diffusion was found to be of well depth dependence and estimated to be in the range of 5.4x10(-16) similar to 1.5x10(-15)cm(2)s(-1). Copyright (C) 1996 Published by Elsevier Science Ltd

A DOUBLE-QUANTUM-WELL IN A DRIVING LASER FIELD

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help of SU(2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

A面(11-20)ZnO薄膜中杂质的偏振PL谱研究

本文通过分析A面(11-20)ZnO薄膜的低温PL(光致发光)光谱偏振特性来研究ZnO光致发光谱中杂质峰的来源.低温(4 K)下观察到476、479 nm两处新的杂质峰以及390 nm处激子峰,根据两个杂质峰的偏振特性,初步判定476nm峰来源于氧空位能级到价带轻空穴的跃迁,479 nm峰来源于氧空位价带重空穴的跃迁.

GaAs/AlGaAs多量子阱红外探测器材料研究

报道GaAs/AlGaAs多量子阱长波长红外探测器材料的制备及其性能。这种材料由GaAs阱和AlGaAs势垒组成,阱内n型掺杂,具有50个周期。利用分子束外延技术成功地生长出了大面积(φ2英寸)均匀(厚度Δt_(max)/t<=3 precent,组分Δx_(max)/x<=3.4 ％,掺杂浓度Δn_(max)/n<=3 ％,椭圆缺陷<=300cm~(-2))的外延材料。分析了暗电流的成因, 通过加厚势垒(L_b>=300A)、控制掺杂(n<=1×10~(18)cm~(-3))、精确设计子带结构, 将暗电流降低了几个数量级,同时使电子的输运得到了改善。由此得到了高质量的多量子阱红外探测器材料。

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Quantum computing

Quantum computing is a quickly growing research field. This article introduces the basic concepts of quantum computing, recent developments in quantum searching, and decoherence in a possible quantum dot realization.

Pressure behavior of deep centers in ZnSxTe1-x alloys

We have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode