Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

Coherent classical-path description of deep tunneling

A central challenge to the semiclassical description of quantum mechanics is the quantum phenomenon of "deep" tunneling. Here we show that real time classical trajectories suffice to account correctly even for deep quantum tunneling, using a recently formulated semiclassical initial value representation series of the quantum propagator and a prefactor free semiclassical propagator. Deep quantum tunneling is effected through what we term as coherent classical paths which are composed of one or more classical trajectories that lead from reactant to product but are discontinuous along the way. The end and initial phase space points of consecutive classical trajectories contributing to the coherent path are close to each other in the sense that the distance between them is weighted by a coherent state overlap matrix element. Results are presented for thermal and energy dependent tunneling through a symmetric Eckart barrier.

Blue electroluminescent polymers with dopant-host systems and molecular dispersion features: polyfluorene as the deep blue host and 1,8-naphthalimide derivative units as the light blue dopants

We developed a series of highly efficient blue electroluminescent polymers with dopant-host systems and molecular dispersion features by selecting 1,8-naphthalimide derivatives as the light blue emissive dopant units, choosing polyfluorene as the deep blue emissive polymer host and covalently attaching the dopant units to the side chain of the polymer host. The polymers' EL spectra exhibited both deep blue emission from the polymer host and light blue emission from the dopant units because of the energy transfer and charge trapping from the polymer host to the dopant units.