Red laser-induced domain inversion in MgO-doped lithium niobate crystals

A laser beam at wavelength 647 nm is focused on a sample of 5 mol% MgO-doped lithium niobate crystal for domain inversion by a conventional external electric field. In this case, a reduction of 36% in the electric field required for domain nucleation (nucleation field) is observed. To the best of our knowledge, it is the longest wavelength reported for laser-induced domain inversion. This extends the spectrum of laser inducing, and the experimental results are helpful to understand the nucleation dynamics under laser illumination. The dependence of nucleation fields on intensities of laser beams is analysed in experiments.

SbOx thin films used for write-once blue laser recording

SbOx thin films are deposited by reactive dc-magnetron sputtering from all antimony metal target in Ar+O-2 with the relative O-2 content 7%. It is found that the as-deposited films call represent a two-component system comprising amorphous Sb and amorphous Sb2O3. The crystallization of Sb is responsible for the changes of optical properties of the films. The results of the static, test show that the SbOx thin films have good writing sensitivity for blue laser beams and the recording marks are very clear and circular. High reflectivity contrast of about 41% is obtained at a writing power 6 mW and writing pulse width 300 ns. In addition, the films show a good stability after reading 10000 times.

Efficient excitations of radially and azimuthally polarized Nd 3+:YAG ceramic microchip laser by use of subwavelength multilayer concentric gratings composed of Nb2O5/SiO2

Cylindrical vector beams were produced from laser diode end-pumped Nd:YAG ceramic microchip laser by use of two types of subwavelength multilayer gratings as the axisymmetric-polarization output couplers respectively. The grating mirrors are composed of high- and low-refractive-index (Nb2O5/SiO2) layers alternately while each layer is shaped into triangle and concentric corrugations. For radially polarized laser output, the beam power reached 610mW with a polarization extinction ratio ( PER) of 61: 1 and a slope efficiency of 68.2%; for azimuthally polarized laser output, the beam power reached 626mW with a PER of 58: 1 and a slope efficiency of 47.6%. In both cases, the laser beams had near-diffraction limited quality. Small differences of beam power, PER and slope efficiency between radially and azimuthally polarized laser outputs were not critical, and could be minimized by further optimized adjustment to laser cavity and the reflectances of respective grating mirrors. The results manifested, by use of the photonic crystal gratings mirrors and end-pumped microchip laser configuration, CVBs can be generated efficiently with high modal symmetry and polarization purity. (C) 2008 Optical Society of America.

Structural, optical and electrical properties of ZnO films grown on c-plane sapphire and (100)gamma-LiAlO2 by pulse laser deposition

ZnO thin films were grown on single-crystal gamma-LiAlO2 (LAO) and sapphire (0001) substrate by pulsed laser deposition (PLD). The structural, optical and electrical properties of ZnO films were investigated. The results show that LAO is more suitable for fabricating ZnO films than sapphire substrate and the highest-quality ZnO film was attained on LAO at the substrate temperature of 550 degrees C. However, when the substrate temperature rises to 700 degrees C, lithium would diffuse from the substrate (LAO) into ZnO film which makes ZnO film on LAO becomes polycrystalline without preferred orientation, the stress in ZnO film increases dominantly and the resistivity of the film decreases exponentially. (c) 2005 Elsevier B.V. All rights reserved.

Nano-modification inside transparent materials by femtosecond laser single beam

Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of similar to 20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with 30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Laser-induced damage morphology of high-reflective optical coatings

Two different kinds of 1064 nm high-reflective (HR) coatings, with and without SiO2 protective layer, were prepared by electron beam evaporation. Three-dimensional damage morphology, caused by a Nd:YAG pulsed laser, was investigated for these HR coatings. Development of laser-induced damage on HR coatings was revealed by both temperature field calculation and discrete meso-element simulation. Theoretical results met experimental very well. (C) 2004 Elsevier B.V. All rights reserved.

高真空室中的水蒸气对HfO2薄膜性能的影响

本文研究了在镀膜过程中真空室内水蒸气的含量对HfO2薄膜物理性能的影响。用电子束蒸发和光电极值监控的方法在BK7基底上制备HfO2薄膜。利用残余气体分析仪在线监测了真空室内的残余气氛组成。分别用Lambda 900光谱仪、X射线衍射方法、表面热透镜技术和1064nm的激光器测试了薄膜的光学性能、微结构、吸收和激光损伤阈值。实验发现，附加冷阱装置有助于我们有效控制镀膜过程中的水汽含量，且在水蒸气含量较少的真空室内镀制的薄膜具有较高的折射率，较小的晶粒尺寸，较低的弱吸收值和较高的损伤阈值。

Structural and optical properties of ZnO thin films on glass substrate grown by laser-ablating Zn target in oxygen atmosphere

C-axis-orientated ZnO thin films were prepared on glass substrates by pulsed-laser deposition (PLD) technique in an oxygen-reactive atmosphere, using a metallic Zn target. The effects of growth condition such as laser energy and substrate temperature on the structural and optical properties of ZnO films had been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra and room-temperature (RT) photoluminescence (PL) measurements. The results showed that the thickness, crystallite size, and compactness of ZnO films increased with the laser energy and substrate temperature. Both the absorption edges and the UV emission peaks of the films exhibited redshift, and UV emission intensity gradually increased as the laser energy and substrate temperature increased. From these results, it was concluded that crystalline quality of ZnO films was improved with increasing laser energy and substrate temperature. (c) 2007 Elsevier B.N. All rights reserved.

EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON

Solid films containing phosphorus impurities were formed on p-type silicon wafer surface by traditional spin-on of commercially available dopants. The doping process is accomplished by irradiating the sample with a 308 nm XeCl pulsed excimer laser. Shallow junctions with a high concentration of doped impurities were obtained. The measured impurity profile was ''box-like'', and is very suitable for use in VLSI devices. The characteristics of the doping profile against laser fluence (energy density) and number of laser pulses were studied. From these results, it is found that the sheet resistance decreases with the laser fluence above a certain threshold, but it saturates as the energy density is further increased. The junction depth increases with the number of pulses and the laser energy density. The results suggest that this simple spin-on dopant pre-deposition technique can be used to obtain a well controlled doping profile similar to the technique using chemical vapor in pulsed laser doping process.

强度空间分布对脉冲激光表面强化的影响

建立了包含脉冲激光强度时空分布、温度相关的材料热物性参数以及多次相变特征在内的脉冲激光表面强化三维有限元模型。温度场和强化区深度分别得到了解析解和试验验证。针对不同脉冲能量级别，研究了强度空间分布形式和光斑几何形状对表面最高温度、强化区深度以及强化区形状等的影响。结果表明，激光强度空间分布是影响强化区的重要因素。为达到理想的强化效果，应根据不同的脉冲能量选择适当的空间分布形式和光斑几何形状。

脉冲激光表面强化数值模拟及热物性参量影响

建立了包含脉冲激光束时空分布、依赖于温度的材料参量、组织演化历史以及多次相变特征在内的脉冲激光表面强化三维有限元模型。针对常热物性和变热物性并考虑相变潜热两种情况，温度场及其演化分别得到了解析解和通用有限元软件的验证，强化区层深和宽度得到了实验验证。研究了材料热物性对强化区的影响，得到了一定范围内强化区层深随材料热物性参量的变化规律，即：热传导系数不变时，强化区层深随热扩散率的增加而增加；比热容不变时，强化区层深随热扩散率的增加而减小；热扩散率一定时，强化区层深随热传导系数和比热容的增加而降低。以球铁、共析钢和巾碳钢为例，分析了两种确定材料热物性常数方法，即一定温度范围内的平均值法和选取奥氏体化温度附近参量方法的可行性，研究表明平均值法可以得到较好的结果。

Visualization of turbulence and internal waves in a stratified fluid

A new method for measuring the density, temperature and velocity of N2 gas flow by laser induced biacetyl phosphorescence is proposed. The characteristics of the laser induced phosphorescence of biacetyl mixed with N2 are investigated both in static gas and in one-dimensional flow along a pipe with constant cross section. The theoretical and experimental investigations show that the temperature and density of N2 gas flow could be measured by observing the phosphorescence lifetime and initial intensity of biacetyl triplet (3Au) respectively. The velocity could be measured by observing the time-of-flight of the phosphorescent gas after pulsed laser excitation. The prospect of this method is also discussed.

激光微弯曲成形机理的数值研究

利用自行研制的含热传导、冲击动力学大、变形有限元程序，模拟了小尺寸梁在脉冲激光加热条件下的变形过程。在此基础上，利用商用程序模拟了冷却及残余应力的产生，研究了激光参数（强度及分布）等对于微弯曲的影响。数值模拟结果与文献中的实验观察相吻合。