The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

Pseudomorphic Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As (y1 greater than or equal to 0.52) modulation-doped heterostructures with an intentional nonlattice-matched buffer layer were successfully grown by molecular beam epitaxy on (100)InP substrates. Fourier transform photoluminescence and double crystal x-ray diffraction measurements show a superior crystalline quality in the high In content channel, when In mole fraction increases from y1=0.52 to 0.55 in the Iny1Al1-y1As buffer layer. In this case, an increasing of 16.3% and 23.5% for conductivity (mu xn(s)) and mobility, related to the strain compensation in the In0.73Ga0.27As channel, was achieved, respectively, comparing to the structure containing a well-lattice matched buffer layer. With increasing the mismatch further (y1=0.58), a morphology with cross-hatched pattern was observed due to the onset of a large amount of misfit dislocations, and the electronic characterization is not able to be improved continuously. Because we can realize high quality strained P-HEMTs in a relative wide range of equivalent beam flux (EBF) ratios, the stringent control over the constant EBF is not indispensable on this In-based material system. (C) 1997 American Vacuum Society.

Biomimetic pattern recognition for speaker-independent speech recognition

In speaker-independent speech recognition, the disadvantage of the most diffused technology ( Hidden Markov Models) is not only the need of many more training samples, but also long train time requirement. This paper describes the use of Biomimetic Pattern Recognition (BPR) in recognizing some Mandarin Speech in a speaker-independent manner. The vocabulary of the system consists of 15 Chinese dish's names. Neural networks based on Multi-Weight Neuron (MWN) model are used to train and recognize the speech sounds. Experimental results are presented to show that the system, which can carry out real time recognition of the persons from different provinces speaking common Chinese speech, outperforms HMMs especially in the cases of samples of a finite size.

Continuous speech recognition based on ICA and geometrical learning

We investigate the use of independent component analysis (ICA) for speech feature extraction in digits speech recognition systems. We observe that this may be true for recognition tasks based on Geometrical Learning with little training data. In contrast to image processing, phase information is not essential for digits speech recognition. We therefore propose a new scheme that shows how the phase sensitivity can be removed by using an analytical description of the ICA-adapted basis functions. Furthermore, since the basis functions are not shift invariant, we extend the method to include a frequency-based ICA stage that removes redundant time shift information. The digits speech recognition results show promising accuracy. Experiments show that the method based on ICA and Geometrical Learning outperforms HMM in a different number of training samples.

Continuous speech research based on HyperSausage Neuron

In this paper, we presents HyperSausage Neuron based on the High-Dimension Space(HDS), and proposes a new algorithm for speaker independent continuous digit speech recognition. At last, compared to HMM-based method, the recognition rate of HyperSausage Neuron method is higher than that of in HMM-based method.

crossmodal error correction of continuous handwriting recognition by speech

In recognition-based user interface, users’ satisfaction is determined not only by recognition accuracy but also by effort to correct recognition errors. In this paper, we introduce a crossmodal error correction technique, which allows users to correct errors of Chinese handwriting recognition by speech. The focus of the paper is a multimodal fusion algorithm supporting the crossmodal error correction. By fusing handwriting and speech recognition, the algorithm can correct errors in both character extraction and recognition of handwriting. The experimental result indicates that the algorithm is effective and efficient. Moreover, the evaluation also shows the correction technique can help users to correct errors in handwriting recognition more efficiently than the other two error correction techniques.

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface by rapid thermal annealing

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal annealing (RTA) has been investigated by using photoluminescence (PL), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), An increase in PL intensity of up to 10 times was observed after sulfur passivation and RTA treatment compared to unpassivated InP surface. XPS measurement results show that introduction of RTA process can enhance the sulfur remaining on the passivated surface to bond to indium but no evidence of S-P bond is noticeable. Passivation enhancement mechanism is discussed.

ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING

Quantum well disordering of GaAs/AlGaAs multiple quantum well(MQW) has been accomplished with only plasma enhanced chemical vapor deposited (PECVD) SiN cap layer growth. The amount of blue shift increases with SiN growing time. This result has been explained by the vacancy indiffusion during PECVD SiN growth. Rapid thermal annealing (RTA) of the sample after SiN cap layer growth at 850 degrees C for 35 s caused a larger amount of blue shift than those obtained without RTA. By considering the model of Al diffusion from AlGaAs barrier into GaAs QWs together with the result from photoluminescence (PL) measurement, Al diffusion coefficients were calculated. The Al diffusion coefficient due to PECVD SiN was estimated at about 3 x10(-17) cm(2)/s. It was possible to extract the effect of RTA on the QW disordering, which showed that the amount of the blue shift and the Al diffusion coefficient due only to RTA increases with SiN cap layer thickness as reported by Chi et al.(10))