Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices

Numerical calculations within the envelope function framework have been performed to analyze the relations between the magnitude of in-plane optical anisotropy and the values of the additional hole-mixing coefficients due to interface and electric field in (001) symmetric GaAs/AlxGa1-xAs superlattices for light propagating along the [001] direction. It is found that the heavy- and light-hole states are mixed independently by interface and electric field. The numeric results demonstrate that the line shape of the in-plane anisotropic spectrum is determined by the ratio of the two hole-mixing coefficients. Theoretical analysis shows that with the help of simple calculation of the anisotropy at k=0, reliable values of the hole-mixing coefficients can be determined by reflectance-difference spectroscopy (IDS) technique, demanding no tedious fitting of experimental curves. The in-plane optical anisotropy measured by RDS provides a new method of getting the information on buried interfaces through the Value of the hole-mixing coefficient due to interface.

Hole levels and exciton states in CdS nanocrystals

We have studied the hole levels and exciton states in CdS nanocrystals by using the hole effective-mass Hamiltonian for wurtzite structure. It is found that the optically passive P-x state will become the ground hole state for small CdS quantum dots of radius less than 69 Angstrom. It suggests that the "dark exciton" would be more easily observed in the CdS quantum dots than that in CdSe quantum dots. The size dependence of the resonant Stokes shift is predicted for CdS quantum dots. Including the Coulomb interaction, exciton energies as functions of the dot radius are calculated and compared with experimental data.

Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Deep trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3x10(17) cm-3 at room temperature. The DLTS spectrum has a dominant peak D-1 with an activation energy of 0.41+/-0.05 eV, accompanied by two additional peaks with activation energies of 0.49+/-0.09 eV (D-2) and 0.59+/-0.05 eV (D-3). It was found that the dominant peak D-1 consists of five peaks, each of which has different activation energy and capture cross section. In order to investigate these deep levels further, we performed heat treatment on the same samples to observe the variations of activation energy, capture cross section, and amplitude of DLTS signals. It was found that the longer the heat treatment duration is, the lower the amplitude of DLTS peaks become. This suggests that the decrease of the DLTS signal originates from hydrogen atom outgoing from the film during the annealing process. The possible originality of multiple trap levels was discussed in terms of the Mg-N-H complex. (C) 2000 American Vacuum Society. [S0734-2101(00)01701-2].

Hole capture barrier of self-organized InAs quantum dots

Deep level transient spectroscopy (DLTS) technique was successfully applied to characterize the electric properties of p type self-organized InAs quantum dots. The ground state energy and capture barrier energy of hole of quantum dots were measured for the first time. The energy of ground state of 2.5ML InAs quantum dots with respect to the valence band of bulk GaAs was obtained being about 0.09eV, and there was a barrier associated to the change of charge state of quantum dots. The capture barrier energy of such dots for hole was about 0.26eV. The work is very meaningful for further understanding the intrinsic properties of quantum dots.

Stimulated luminescence and photo-gated hole burning in BaFCl0.8Br0.2 : Sm2+,Sm3+ phosphors

The photo- and thermo-stimulated luminescence (PSL and TSL) of BaFCl0.8Br0.2:Sm2+,Sm3+ phosphors were investigated. It is found that the stimulated luminescence intensity of Sm2+ is almost equal to that of Sm3+ even if the content of Sm2+ is much lower than that of Sm3+. Only the stimulated luminescence of Sm2+ is observed in the sample in which the content of Sm2+ is much higher than Sm3+, demonstrating that the PSL or TSL efficiency of Sm2+ is much higher than that of Sm3+. This is attributed to the effective overlap of the e-h emission with the absorption of Sm2+ centers which may make the energy transfer from the electron-hole pairs to Sm2+ effectively. In BaFCl0.8Br0.2:Sm2+,Sm3+ the stimulated luminescence is considered to be occurred via the recombination of photoreleased electrons with the [Sm2+ + h] or [Sm3+ + h] complex and the energy transfer from the electron-hole pairs to the luminescence centers (Sm2+ and Sm3+) is concerned to be the major step to determine the stimulated luminescence efficiency. The X-ray-induced stimulated luminescence is compared and connected to the photon gated hole burning. The net result of the two processes is quite similar and may be comparable. It is suggested from the observations of stimulated luminescence that electron migration between Sm2+ and Sm3+ is not the major process, color centers may play an important role in hole burning. The information from stimulated luminescence is helpful for the understanding of the hole burning mechanism. (C) 1999 Elsevier Science Ltd. All rights reserved.

Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Hole trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy (MOVPE) are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3 x 10(17) cm(-3) at room temperature. The DLTS spectrum has a dominant peak D-1 with activation energy of 0.41+/-0.05 eV, accompanied by two additional peaks with activation energies of 0.49+/-0.09 eV (D-2) and 0.59+/-0.05 eV (D-3). It was found that the dominant peak D-1 consists of five peaks, each of which has different activation energy and capture cross section. A relevant model for these levels is presented in relation to the Mg-N-H complexes. (C) 1998 American Institute of Physics. [S0003-6951(98)04340-X].

Energy spectrum and persistent currents in finite-width mesoscopic ring with radial potential barrier threading a magnetic flux through its hole

The energy spectrum and the persistent currents are calculated for a finite-width mesoscopic annulus with radial potential barrier, threading a magnetic flux through the hole of the ring. Owing to the presence of tunneling barrier, the coupling effect leads to the splitting of each radial energy subband of individual concentrical rings into two one. Thus, total currents and currents carried by single high-lying eigenstate as a function of magnetic flux exhibit complicated patterns. However, periodicity and antisymmetry of current curves in the flux still preserve.

On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector

In this paper, the detection wavelength and the electron-hole wave function overlap of InAs/IrxGa1-xSb type II superlattice photodetectors are numerically calculated by using the envelope function and the transfer matrix methods. The band offset is dealt with by employing the model solid theory, which already takes into account the lattice mismatch between InAs and InxGa1-xSb layers. Firstly, the detection wavelength and the wave function overlap are investigated in dependence on the InAs and InxGa1-xSb layer thicknesses, the In mole fraction, and the periodic number. The results indicate that the detection wavelength increases with increasing In mole fraction, InAs and InxGa1-xSb layer thicknesses, respectively. When increasing the periodic number, the detection wavelength first increases distinctly for small periodic numbers then increases very slightly for large period numbers. Secondly, the wave function overlap diminishes with increasing InAs and InxGa1-xSb layer thicknesses, while it enhances with increasing In mole fraction. The dependence of the wave function overlap on the periodic number shows the same trend as that of the detection wavelength on the periodic number. Moreover, for a constant detection wavelength, the wave function overlap becomes greater when the thickness ratio of the InAs over InxGa1-xSb is larger.

Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO3: PTCDA/NPB/Alq(3)/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m(2), which is 1.3 times more stable than that of the device with MoO3 as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m(2) have been obtained. The charge transfer complex between PTCDA and MoO3 plays a decisive role in improving the performance of OLEDs.

Analysis of leakage current in GaAs micro-solar cell arrays

The output characteristics of micro-solar cell arrays are analyzed on the basis of a modified model in which the shunt resistance between cell lines results in current leakage. The modification mainly consists of adding a shunt resistor network to the traditional model. The obtained results agree well with the reported experimental results. The calculation results demonstrate that leakage current in substrate affects seriously the performance of GaAs micro- solar cell arrays. The performance of arrays can be improved by reducing the number of cells per line. In addition, at a certain level of integration, an appropriate space occupancy rate of the single cell is recommended for ensuring high open circuit voltages, and it is more appropriate to set the rates at 80%-90% through the calculation.

Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.

Picosecond ultra-wideband short pulse radiated by antenna arrays

This report presents the experiments to study the characteristics of the picosecond ultra-wideband pulses coherent radiation. The testing involves bow-tie horn antennas for both the transninting and receiving antenna. Sixteen channels of electrical pulses with 290 ps duration and jitter < 30 ps have been used. The antenna arrays with various frames of 4 x 1, 4 x 2, 4 x 3, 4 x 4 are employed to radiate the pulses. The receiving antenna measures the electrical field in different distance front the transmitting antennas arrant The results show that if the pulses are in coherent condition, the peak power pulse of output by antennas array with N elements are N-2 of that of the single element antenna. (c) 2007 Wiley Periodicals, Inc.