Interfaces in heterostructures of AlInGaN/GaN/Al2O3

Rutherford backscattering/channeling (RBS/C) and X-ray diffraction (XRD) are used to comprehensively characterize a heterostructure of AlInGaN/GaN/Al2O3(0001). The AlInGaN quaternary layer was revealed to process a high crystalline quality with a minimum yield of 1.4% from RBS/C measurements. The channeling spectrum of (1 (2) under bar 13) exhibits higher dechanneling than that of (0001) at the interface of AlInGaN/GaN. XRD measurements prove a coherent growth of AlInGaN on the GaN template layer. Combining RBS/C and XRD measurements, we found that the interface of GaN/Al2O3 is a nucleation layer, composed of a large amount of disorders and cubic GaN slabs, while the interface of AlInGaN/GaN is free of extra disordering (i.e. compare with the GaN layer). The conclusion is further evidenced by transmission electron microscopy (TEM). (c) 2005 Elsevier Ltd. All rights reserved.

Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells

Both cracked and crack-free GaN/Al0.55Ga0.45N multiple quantum wells (MQWs) grown on GaN template by metalorganic chemical vapor deposition have been studied by triple-axis X-ray diffraction, grazing-incidence X-ray reflectivity, atomic force microscope, photoluminescence spectroscopy and low-energy positron annihilation spectroscopy. The experimental results show that cracks generation not only deteriorates the surface morphology, but also leads to a period dispersion and roughens the interfaces of MQWs. The mean density of dislocations in MQWs, determined from the average full-width at half-maximum of to-scan of each satellite peak, has been significantly enhanced by the cracks generation. Furthermore, the measurement of annihilation-line Doppler broadening reveals a higher concentration of negatively charged vacancies in the cracked MQWs. The combination of these vacancies and the high density of edge dislocations are assumed to contribute to the highly enhanced yellow luminescence in the cracked sample. (c) 2005 Elsevier B.V. All rights reserved.

Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates

Epitaxial lateral overgrown (ELO) cubic GaN (c-GaN) on SiO2 patterned GaN/GaAs(0 0 1) substrates by metalorganic vapor phase epitaxy was investigated using transmission electron microscopy and X-ray diffraction (XRD) measurements. The density of stacking faults (SFs) in ELO c-GaN was similar to6 x 10(8) cm(-2), while that in underlying GaN template was similar to5 x 10(9) cm(-2). XRD measurements showed that the full-width at half-maximum of c-GaN (0 0 2) rocking curve decreased from 33 to 17.8 arcmin, indicating the improved crystalline quality of ELO c-GaN. The mechanism of SF reduction in ELO c-GaN was also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy

Atomic force microscopy and photoluminescence spectroscopy (PL) has been used to study asymmetric bilayer InAs quantum dot (QD) structures grow by molecular-beam epitaxy on GaAs (001) substrates. The two InAs layers were separated by a 7-nm-thick GaAs spacer layer and were grown at different substrate temperature. We took advantage of the intrinsic nonuniformity of the molecular beams to grow the seed layer with an average InAs coverage of 2.0 ML. Then the seed layer thickness could be divided into three areas: below, around and above the critical thickness of the 2D-3D transition along the 11101 direction of the substrate. Correspondingly, the nucleation mechanisms of the upper InAs layer (UIL) could be also divided into three areas: temperature-controlled, competition between temperature-controlled and strain-induced, and strain-induced (template-controlled) nucleation. Small quantum dots (QDs) with a large density around 5 x 10(10) cm(-2) are found in the temperature-controlled nucleation area. The QD size distributions undergo a bimodal to a unimodal transition with decreasing QD densities in the strain-induced nucleation area, where the QD densities vary following that of the seed layer (templating effect). The optimum QD density with the UIL thickness fixed at 2.4 ML is shown to be around 1.5 x 10(10) cm(-2), for which the QD size distribution is unimodal and PL emission peaks at the longest wavelength. The QDs in the in-between area exhibit a broad size distribution with small QDs and strain-induced large QDs coexisting.

The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105

Thick GaN films were grown on sapphire in a home-made vertical HVPE reactor. Effect of nucleation treatments on the properties of GaN films was investigated, including the nitridation of sapphire, low temperature GaN buffer and MOCVD-template. Various material characterization techniques, including AFM, SEM, XRD, CL and PL have been used to assess these GaN epitaxial films. It was found that the surface of sapphire after high temperature nitridation was flat and showed high density nucleation centers. In addition, smooth Ga-polarity surface of epitaxial layer can be obtained on the nitridation sapphire placed in air for several days due to polarity inversion. This may be caused by the atoms re-arrangement because of oxidation. The roughness of N-polarity film was caused by the huge inverted taper domains, which can penetrate up to the surface. The low temperature GaN buffer gown at 650 degrees C is favorable for subsequent epitaxial film, which had narrow FWHM of 307 arcsec. The epitaxial growth on MOCVD-template directly came into quasi-2D growth mode due to enough nucleation centers, and high quality GaN films were acquired with the values of the FWHM of 141 arcsec for (002) reflections. After etching in boiled KOH, that the total etch-pit density was only 5 x 106 cm(-2) illustrated high quality of the thick film on template. The photoluminescence spectrum of GaN film on the MOCVD-template showed the narrowest line-width of the band edge emission in comparison with other two growth modes.

Research of Face Detection System Applied for Detecting Faces with Complex Background and Illumination

An effective face detection system used for detecting multi pose frontal face in gray images is presented. Image preprocessing approaches are applied to reduce the influence of the complex illumination. Eye-analog pairing and improved multiple related template matching are used to glancing and accurate face detecting, respectively. To shorten the time cost of detecting process, we employ prejudge rules in checking candidate image segments before template matching. Test by our own face database with complicated illumination and background, the system has high calculation speed and illumination independency, and obtains good experimental results.

基于模板匹配和SVM的草图符号自适应识别方法

草图符号的自适应学习中，不同用户的训练样本数量可能不同。保持在不同样本数量下良好的学习效果成为需要解决的一个重要问题．提出一种自适应的草图符号识别方法，该方法采用与训练样本个数相关的分类器组合策略将模板匹配方法和SVM统计分类方法进行了高效组合．它通过利用支持小样本学习的模板匹配方法和支持大量样本学习的SVM方法，并同时利用草图符号中的在线信息和离线信息，实现了不同样本个数下自适应的符号学习和识别．基于该方法，文中设计并实现了支持自适应识别的草图符号组件．最后，利用扩展的PIBGToolkit开发出原型系统IdeaNote．评估表明，该方法可以在24类草图符号分别使用1到20个训练样本时具有较高的识别正确率和较好的时间性能．

Facile route to fabricate large-scale silver microtubes

Large-scale uniform Ag microtubes with high length diameter ratios have been first successfully synthesized by a facile approach, using low-cost super fine glass fibers as templates. The samples were characterized by SEM and XRD. The investigations showed that calcining or adding of PEG-1000 and alcohol could greatly improve the mechanical strength of the sample. Especially the products exhibited favorable catalytic properties during the degradation of Rhodamine B by NaBH4. (c) 2007 Elsevier B.V. All rights reserved.

稀土发光材料M_2O_3:RE~(3+)（M＝Y，Gd:RE＝Eu，Tb）体系的AAO模板组装

AAO模板具有高度有序的纳米孔阵列，其孔径可以在5一200nm范围内调节，利用AAO模板进行纳米组装已成为纳米结构材料组装的重要技术之一。目前，采用该技术已经制备出了金属、半导体、碳、导电高分子以及其它材料构成的纳米管、纳米线、纳米纤维、电缆等纳米结构单元和有序纳米阵列材料，同时，研究了它们的光、电、磁和催化等特性及其在光学材料、铿电池的电极材料、垂直磁性记录材料和光催化剂等方面的潜在应用。然而，有关稀土发光材料的AAO模板合成及其性质还鲜见报道。本论文采用二次阳极氧化技术制备出了具有高度有序纳米阵列孔的AAO模板。采用溶胶一凝胶法和水热法对稀土发光材料M2O3:RE3+（M＝Y,Gd; RE＝Eu，Tb）体系进行了AAO组装，得到了纳米线、纳米管及其纳米线阵列。对AAO模板和组装样品的形貌、结构和光谱性质进行了表征，得到了一些令人感兴趣的研究结果，其主要的结果和结论总结如下：（1）采用二次阳极氧化法制备出了孔径约为5Onm、35nm和2Onm等系列高度有序纳米阵列孔的基体铝支持的AAO模板和独立支撑的AAO模板。（2）XRD测试结果表明：退火后的基体铝片，其331晶面优先结晶生长，这有利于高度有序纳米阵列孔AAO模板的制备。使用这些退火后的铝片，通过二次阳极氧化法制备的高度有序纳米阵列孔AAO膜为非晶态，并且在退火后转变为γ-Al2O3。（3）未退火的基体铝支持的AAO模板，在350一600nm范围内发出较强的蓝光，其峰值波长位于435nm。该蓝光发射带经过程序控温慢慢退火后完全消失，这说明它产生于缺陷发光中心。（4）采用溶胶一凝胶法，利用AAO模板首次合成出了（YO.96RE0.05）O3（RE＝Eu，Tb）纳米线及其阵列，并通过SEM、EDX、TEM、SAED、XRD和PL分析测试加以确认。x-射线衍射（XRD）和选区电子衍射（SAED）的结果证明，这些纳米线主要是由立方相的RE2O3（RE＝Y或Gd）多晶材料组成的。光谱测试结果表明，同体相材料相比，Eu3＋的，D0一7F2跃迁发射峰和Tb3＋的5D4一7FJ（J=6，5，4，3）跃迁发射峰出现了宽化，这种现象可能是纳米颗粒的表面界面效应所引起的非均匀宽化造成的。（5）首次观察到利用溶胶一凝胶法组装的一部分M2O3:RE3＋（M＝Y，Gd；RE＝Eu，Tb）样品，沿着AAO模板阵列孔壁的边沿所形成的网状结构，并初步地探讨了其形成的机理。（6）对于M2O3:RE3＋（M=Y，Gd；RE＝Eu，Tb）体系，仅仅依靠毛细作用是难以充分地将溶胶前驱液组装进从O模板的阵列孔中。（7）首次利用水热合成法，在中性条件介质下，将（Y，Gd）2O3:Eu3+样品充分地组装进了AAO模板的纳米孔道中，这说明水热产生的高压可以作为AAO模板组 装样品的驱动力。（8）以M2O3: RE3+（M＝Y，Gd；RE＝Eu，Tb）溶胶或氢氧化物沉淀作为前驱物，分别在酸性和碱性条件下，进行了从0模板水热合成组装。实验结果表明，AAO模板被部分地损坏。但在碱性条件下的高压釜中，却得到了单晶纳米管、纳米片和纳米棒。

Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth. AFM,wet chemical etching, and TEM experiments show that with a two-step ELOG procedure, the propagation of defects under the mask is blocked, and the coherently grown GaN above the window also experiences a drastic reduction in defect density. In addition, a grain boundary is formed at the coalescence boundary of neighboring growth fronts. The extremely low density of threading dislocations within wing regions makes ELOG GaN a potential template for the fabrication of nitride-based lasers with improved performance.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.