123 resultados para Radio measurements
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Erbium-implanted silicones were treated by lamp-heating rapid thermal annealing (RTA). Two types of erbium-related photoluminescence spectra appear under different anneal temperatures. 750 degrees C annealing optimizes the luminescence intensity, which does not change with anneal time. Exciton-mediated energy transfer model in erbium-doped silicon was presented. The emission intensity is related to optical active erbium concentration, lifetime of excited Er3+ ion and spontaneous emission time. The thermal quenching of the erbium luminescence in Si is caused by thermal ionization of erbium-bound exciton complex and nonradiative energy backtransfer processes, which correspond to the activation energy of 6.6 meV and 47.4 meV respectively.
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IEECAS SKLLQG
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In order to diagnose the electron cyclotron resonance (ECR) plasma, electron bremsstrahlung spectra were measured by a HPGe detector on Lanzhou ECR Ion Source No. 3 at IMP. The ion source was operated with argon under various working conditions, including different microwave power, mixing gas, extraction high voltage (HV), and so on. Some of the measured spectra are presented in this article. The dependence of energetic electron population on mixing gas and extraction HV is also described. Additionally, we are looking forward to further measurements on SECRAL (Superconducting ECR Ion Source with Advanced design at Lanzhou).
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ZnO films doped with different contents of indium were prepared by radio frequency sputtering technique. The structural, optical and emission properties of the films were characterized at room temperature using XRD, XPS, UV-vis-NIR and PL techniques. Results showed that the indium was successfully incorporated into the c-axis preferred orientated ZnO films, and the In-doped ZnO films are of over 80% optical transparency in the visible range. Furthermore, a double peak of blue-violet emission with a constant energy interval (similar to 0.17 eV) was observed in the PL spectra of the samples with area ratio of indium chips to the Zn target larger than 2.0%. The blue peak comes from the electron transition from the Zn-i level to the top of the valence band and the violet peak from the In-Zn donor level to the V-Zn level, respectively.
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Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400 degrees C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.
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The axial emitted bremsstrahlung spectra were measured on SECRAL (Superconducting ECR ion source with Advanced design in Lanzhou) using an HPGe detector. The spectral temperature T-spe was obtained from the linear fit of the spectra in the semi-log present. The evolution of T-spe with microwave power and magnetic field configuration is investigated in this paper.
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With the commissioning of the Cooler Storage Ring at the Heavy Ion Research Facility in Lanzhou (HIRFL-CSR), a pilot experiment operating the CSRe in isochronous mode to test the power of HIRFL-CSR for measuring the mass of the short-lived nucleus was performed in December of 2007. The transition point gamma t of CSRe in isochronous mode is 1.395 which corresponds to the energy about 368 MeV/u for the ions with atomic number-to-charge ratio A/q = 2. The fragments with A/q = 2 of Ar-36 were injected into CSRe and their revolution frequencies were measured with a fast time pick-up detector with a thin foil in the circulating path of the ions. A mass resolution of better than 105 for m/Delta m was achieved.
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To investigate effects of nitric oxide on cellular radio-sensitivity, three human glioma cell lines, i.e. A172, A172 transfected green fluorescence protein (EGFP) gene (EA172) and A172 transfected inducible nitric oxide synthesis (iNOS) gene (iA72), were irradiated by C-12(6+) ions to 0, 1 or My. Productions of nitric oxide and glutathione (GSH) in A172, EA172 and iA172 were determined by chemical methods, cell cycle was analyzed by flow cytometry at the 24th hour after irradiation, and survival fraction of the cells was measured by colorimetric MTT assay at the 5th day after irradiation. The results showed that the concentrations of nitric oxide and GSH in iA172 were significantly higher than in A172 and EA172; the G(2)/M stage arrest induced by the C-12(6+) ion irradiation was observed in A172 and EA172 but not in iA172 at the 24th hour after exposure; and the survival fraction of iA172 was higher than that of EA172 and iA172. Data suggest that the radio-sensitivity of the A172 was reduced after the iNOS gene transfection. The increase of GSH production and the change of cellular signals such as the cell cycle control induced by nitric oxide may be involved in this radio-resistance.
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Mass measurements of exotic nuclei is a fast, developing field which is essential for basic nuclear physics and a wide range of applications. The method of storage ring mass spectrometry has many advantages: (1) a large amount of nuclides can be simultaneously measured; (2) very short-lived (T-1/2 greater than or similar to 50 mu s) and very rare species (yields down to single ions) can be accessed; (3) nuclides in several atomic charge states can be investigated, (4) half-life measurements can be performed with time-resolved mass spectrometry. In this contribution we concentrate on some recent achievements and future perspectives of the storage ring mass spectrometry.