Multiple energy transfers in rare earth complex-doped SiO2 spheres

Silica spheres doped with Eu(TTFA)(3) and/or Sm(TTFA)(3) were synthesized by using the modified Stober method. The transmission electron microscope image reveals that the hybrid spheres have smooth surfaces and an average diameter of about 210 nm. Fluorescence spectrometer was used to analyze the fluorescence properties of hybrid spheres. The results show that multiple energy transfer processes are simultaneously achieved in the same samples co-doped with Eu (TTFA)(3) and Sm(TTFA)(3), namely between the ligand and Eu3+ ion, the ligand and Sm3+ ion, and Sm3+ ion and Eu3+, ion. Energy transfer of Sm3+-> Eu3+, in the hybrid spheres leads to fluorescence enhancement of Eu3+ emission by approximately an order of magnitude. The lifetimes of the hybrid spheres were also measured.

Optical properties of a novel neodymium pentafluoropropionate binuclear complex

A novel neodymium pentafluoropropionate binuclear complex, Nd(C(2)F(5)COO)(3)Dipy (Dipy: 2,2'-dipyridyl), was synthesized and characterized by single-crystal X-ray diffraction. At a concentration of 0.2 M in DMSO-d(6), the Judd-Ofelt parameters (Omega(2), Omega(4), Omega(6)) were calculated from the UV-Vis spectrum. According to the small value of Omega(2) and the zero splitting energy of (4)F/(3/2) level, a symmetric ligand field of the complex was confirmed in DMSO-d(6). Strong emission of the complex in DMSO-d(6) at 1057 nm with a decay time about 1.3 mu s were detected when excited at 800 nm pumped by a laser diode. The stimulated emission cross-section of (4)F(3/2) -> (4)I(11/2) fluorescence transition was 2.36 x 10 (20) cm(2) and comparable with some laser glasses, which indicated good radiative properties of this neodymium pentafluoropropionate binuclear complex in liquid matrix. (c) 2008 Elsevier B.V. All rights reserved.

Design and performance of a complex-coupled DFB laser with sampled grating

A complex-coupled DFB laser with sampled grating has been designed and fabricated. The method uses the + 1 st order reflection of the sampled grating for laser single-mode operation. The typical threshold current of the sampled grating based DFB laser is 25 mA, and the optical output is about 10 mW at the injected current of 100 mA. The lasing wavelength of the device is 1.5385μm, which is the +1 st order wavelength of the sampled grating.

1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser

1.3 mu m strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degrees C are reported. The low threshold current of 10mA and high single-facet slope efficiency of 0.3mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.

Epitaxial growth of SiC on complex substrates

Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.

A modified criterion for shear band formation in bulk metallic glass under complex stress states

A new criterion for shear band formation in metallic glasses is proposed based on the shear plane criterion proposed by Packard and Schuh [1]. This modified shear plane (MSP) criterion suggests that a shear band is not initiated randomly throughout the entire material under stress but is initiated at the physical boundaries or defects and at locations where the highest normal stress modified maximum shear stress occurs. Moreover, the same as in the shear plan criterion, the shear stress all over the shear band should exceed the shear yield strength of the material. For a complete shear band to form, both requirements need to be fulfilled. The shear yield strength of the material is represented by the shear stress of the point at which the shear band stops. The new criterion agrees very well with experimental results in both the determination of the shear yield strength and the shear band path. (C) 2010 Elsevier B.V. All rights reserved.