129 resultados para MOSFET devices


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A series of cross-linkable aromatic amines has been synthesized by the multi-step synthetic rout. Full characterization of their structure by H-1 NMR-, IR- and mass spectrometry is presented. The synthesized materials were examined by various techniques including differential scanning calorimetry, thermogravimetry, UV and electron photoemission spectrometry.

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Characteristics of white organic light-emitting devices based on phosphor sensitized fluorescence are improved by using a multiple-emissive-layer structure, in which a phosphorescent blue emissive layer is sandwiched between red and green&yellow ones. In this device, bis[(4,6-difluorophenyl)-pyridinato-N,C-2] (picolinato), bis(2,4-diphenyl-quinoline) iridium (III) acetylanetonate, fac bis (2-phenylpyridine) iridium, and 5,6,11,12-tetraphenylnaphthacene are used as blue, red, green, and yellow emitters, respectively.

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A promising method for assembling carbon nanotubes (CNTs) and poly(diallyldimethylammonium chloride) protected Prussian blue nanoparticles (P-PB) to form three-dimensional (3D) nanostructured films is proposed. The electrostatic interaction, combined with layer-by-layer self-assembly (LBL), between negatively charged CNTs and positively charged P-PB is strong enough to drive the formation of the 3D nanostructured films. Thus, prepared multilayer films were characterized by ultraviolet-visible-near-infrared spectroscopy (UV-vis-NIR), scanning electron microscopy (SEM) and cyclic voltammetry (CV).

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Low crystalline order has been proved to be one of the main hindrances for achieving high performance devices based on thin films composed of crystallizable polymer. In this work, we use a facile method to substantially improve crystallinity of poly(3-hexylthiophene) (P3HT) in its pure or composite film via the construction of ordered precursors in the solution used for thin film deposition. These improvements have been confirmed by bright-field transmission electron micrography, electron diffraction, UV-Vis absorption and wide-angle X-ray diffraction.

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A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 10(4) and the retention time was over 2000 s without degradation.

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We realized write-once-read-many-times (WORM) memory devices based on pentacene and demonstrated that the morphology control of the vacuum deposited pentacene thin film is greatly important for achieving the unique nonvolatile memory properties. The resulted memory devices show a high ON/OFF current ratio (10(4)), long retention time (over 12 h), and good storage stability (over 240 h). The reduction of the barrier height caused by a large interface dipole and the damage of the interface dipole under a critical bias voltage have been used to explain the transition processes.

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Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.

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We fabricated the interdiffused organic photovoltaic devices, which composed of poly (2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene) (MEH-PPV) and buckminsterfullerene (C-60), by annealing treatment. After annealing, C60 diffused into the MEH-PPV layer, in consequence, MEH-PPV/C-60 interfacial area was increased and their interface became closer proximity. The results lead to reduce reverse-bias saturation current (J(s)), and increase the open-circuit voltage (V-OC) and the short-circuit current (J(SC)).

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In this study, we investigated the dependence of electroluminescence (EL) efficiency on carrier distribution in the light-emitting layer (EML) of the device based on Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1, 10-phenanthroline) doped 4,4'-N,N'-dicarbazole- biphenyl (CBP) system. We found that EL efficiency increases monotonously with increasing hole injection even when holes are the majority carriers. This phenomenon was attributed to the accumulation of holes in EML, which improves the balance of holes and electrons on Eu(TTA)(3)phen molecules, thus enhancing the EL efficiency.

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The substantial crystallization suppression of poly(3-hexylthiophene) (P3HT) in the untreated P3HT:C60 composite film prepared from o-dichlorobenzene (ODCB) solution has been revealed. Besides, the effective conjugation length of P3HT in this composite has been nearly maintained to that in the solution. The different crystallization behaviors of P3HT in its composites with C60 and [6,6]-phenyl C-61 butyric acid methyl ester (PCBM) are mainly attributed to the relative solubility of C60 and PCBM with respect to P3HT in ODCB. The solution to overcome this disadvantage of chain conformation and crystallinity of P3HT in the composite with C60 is thus proposed and finalized by resorting to the addition of low volatile solvent with much higher solubility of C60 than P3HT into the main solvent used, so as P3HT can crystallize before C60 forms crystallites in the solution. The feasibility of this approach has been proven by the improved efficiency of devices based on composites of P3HT and the low cost C60 without resorting to post-treatments.

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A novel class of hosts suitable for solution processing has been developed based on a conjugated dendritic scaffold. By increasing the dendron generation, the highest occupied molecular orbital (HOMO) energy level can be tuned to facilitate hole injection, while the triplet energy remains at a high level, sufficient to host high-energy-triplet emitters. A power-efficient blue-electrophosphorescent device based on H2 (see figure) is presented.

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We have observed, respectively, a negative differential resistance (NDR) and switching conduction in current-voltage (I-V) characteristics of organic diodes based on copper phthalocyanine (CuPc) film sandwiched between indium-tin-oxide (ITO) and aluminum (Al) by controlling the evaporation rate. The NDR effect is repeatable which can be well, controlled by sweep rate and start voltage, and the switching exhibits write-once-read-many-times (WORM) memory characteristics. The traps in the organic layer and interfacial dipole have been used to explain the NDR effect and switching conduction. This opens up potential applications for CuPc organic semiconductor in low power memory and logic circuits.

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A simple and facile procedure to synthesize a novel hybrid nanoelectrocatalyst based on polyaniline (PANI) nanofiber-supported supra-high density Pt nanoparticles (NPs) or Pt/Pd hybrid NPs without prior PANI nanofiber functionalization at room temperature is demonstrated. This represents a new type of ID hybrid nanoelectrocatalyst with several important benefits. First, the procedure is very simple and can be performed at room temperature using commercially available reagents without the need for templates and surfactants. Second, ultra-high density small "bare" Pt NPs or Pt/Pd hybrid NPs are grown directly onto the surface of the PANI nanofiber, without using any additional linker. Most importantly, the present PANI nanofiber-supported supra-high density Pt NPs or Pt/Pd hybrid NPs can be used as a signal enhancement element for constructing electrochemical devices with high performance.

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In this paper, we have reported a very simple strategy (combined sonication with sol-gel techniques) for synthesizing well-defined silica-coated carbon nanotube (CNT) coaxial nanocable without prior CNT functionalization. After functionalization with NH2 group, the CNT/silica coaxial nanocable has been employed as a three-dimensional support for loading ultra-high-density metal or hybrid nanoparticles (NPs) such as gold NPs, Au/Pt hybrid NPs, Pt hollow NPs, and Au/Ag core/shell NPs. Most importantly, it is found that the ultra-high-density Au/Pt NPs supported on coaxial nanocables (UASCN) could be used as enhanced materials for constructing electrochemical devices with high performance. Four model probe molecules (O-2, CH3OH, H2O2, and NH2NH2) have been investigated on UASCN-modified glassy carbon electrode (GCE). It was observed that the present UASCN exhibited high electrocatalytic activity toward diverse molecules and was a promising electrocatalyst for constructing electrochemical devices with high performance. For instance, the detection limit for H2O2 with a signal-to-noise ratio of 3 was found to be 0.3 mu M, which was lower than certain enzyme-based biosensors.