Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.

eta-production on the proton via electromagnetic and hadronic probes

The reactions pi(-)p -> eta n and gamma p -> eta p are investigated within a dynamical coupled-channels model of meson production reactions in the nucleon resonance region The meson-baryon channels included are pi N, pi Delta, sigma N, and rho N The direct eta-photoproduction process is studied within a formalism based on a chiral constituent quark model approach, complemented with a one-gluon-exchange mechanism, to take into account the breakdown of the SU(6)circle times O(3) symmetry In the models search, the following known nucleon resonances are embodied S-11(1535), S-11(1650), P-11(1440), P-11(1710), P-13(1720), D-13(1520), D-13(1700), D-15(1675), and F-15(1680). Data for the pi(-)p -> eta n reaction from threshold up to a total center-of-mass energy of W approximate to 2 GeV are satisfactorily reproduced For the photoproduction channel: two additional higher mass known resonances, P-13(1900) and F-15(2000), are also considered However, reproducing the data for gamma p -> eta p requires, within our approach, two new nucleon resonances, for which we extract, mass and width

BRST quantization and canonical Ward identity of the supersymmetric electromagnetic interaction system

According to the method of path integral quantization for the canonical constrained system in Becchi-Rouet-Stora-Tyutin scheme, the supersymmetric electromagnetic interaction system was quantized. Both the Hamiltonian of the supersymmetric electromagnetic interaction system in phase space and the quantization procedure were simplified. The BRST generator was constructed, and the BRST transformations of supersymmetric fields were gotten; the effective action was calculated, and the generating functional for the Green function was achieved; also, the gauge generator was constructed, and the gauge transformation of the system was obtained. Finally, the Ward-Takahashi identities based on the canonical Noether theorem were calculated, and two relations between proper vertices and propagators were obtained.

Super-FRS超导磁体失超瞬态热应力分析；Quench transient thermal stress analysis of super-FRS dipoles

国际反质子与离子大科学工程(FAIR)项目是一个大型的国际合作项目,其中Super-FRS超导二极磁体由中国科学院近代物理研究所研制。利用ADINA有限元程序对项目中的超导Super-FRS磁体线圈的失超过程进行了模拟分析。利用C程序对ADINA程序进行二次开发以便对有限元求解器的调用和载荷的控制。分析结果显示:在失超过程中产生的最大热应力为26 MPa,可能产生的声波频率在35 Hz左右。

Transient state of chiral recognition in a binary mixture of cyclodextrins in capillary electrophoresis

The transient state (as the defined point where no enantioseparation is obtained in a dual chiral selector system) of chiral recognition of aminoglutethimide in a binary mixture of neutral cyclodextrins (CDs) was studied by capillary electrophoresis (CE). The following three dual selector systems were used: alpha-cyclodextrin (alpha-CD) and beta-cyclodextrin (beta-CD); alpha-CD and heptakis(di-O-methyl-beta-cyclodextrin) (DM-beta-CD); alpha-CD and heptakis(tri-O-methyl-beta-cyclodextrin) (TM-beta-CD). The S-(-) enantiomer of the analyte was more strongly retained in the presence of either alpha-CD or TM-beta-CD at pH 2.5, 100 mM phosphate buffer, while the R-(+) enantiomer was more strongly retained in the presence of either P-CD or DM-P-CD. In the more simple case, the elution order is invariably kept if the enantiomers have the same elution order in either one of the two hosts of the binary mixture. In contrast, the elution order may be switched by varying the concentration ratio of two hosts that produce opposite elution order for this particular analyte. In such a dual selector system, the enantioselectivity will disappear at the transient state at a certain ratio of host,:host, Moreover, the migration times of the two enantiomers with host, alone (diluted in buffer) is approximately equal to the migration times at the corresponding concentration of host, alone (diluted in buffer), where the ratio of concentrations of host,:host, is the same as in the binary mixture at the transient state. As found by nuclear magnetic resonance experiments, the analyte is forming a 1:1 complex with either one of the CDs applied. From this finding, a theoretical model based on the mobility difference of the two enantiomers was derived that was used to simulate the transient state. (C) 2000 Elsevier Science B.V. All rights reserved.

Crystallization Behaviors of n-Octadecane in Confined Space: Crossover of Rotator Phase from Transient to Metastable Induced by Surface Freezing

In this paper, the confined crystallization and phase transition behaviors of n-octadecane in microcapsules with a diameter of about 3 Pm were studied with the combination of differential scanning calorimetry (DSC), temperature dependent Fourier transform infrared spectroscopy (FTIR), and X-ray diffraction (XRD).

Switch-on transient behavior of vanadium phthalocyanine based organic transistors

The authors investigated the switch-on transient properties of p-type vanadium phthalocyanine (VOPc) transistors, which were fabricated by weak epitaxy growth on ordered para-sexiphenyl (p-6P) layer. The overshoot phenomenon of drain current had been observed in the VOPc/p-6P transistors, which was explained by the filling of carriers in traps of organic films. The small overshoot value of about 35% and transient duration time of 2 ms demonstrated the low trap concentration in organic films, which were comparable to the reported hydrogenated amorphous-silicon thin-film transistors. Therefore, the VOPc/p-6P transistors can be applied in active matrix liquid crystal display as switch elements.