Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy

Anisotropic exchange splitting (AES) is induced by the joint effects of the electron-hole exchange interaction and the symmetry reduction in quantum wells and quantum dots. A model has been developed to quantitatively obtain the electron-hole exchange energy and the hole-mixing energy of quantum wells and superlattices. In this model, the AES and the degree of polarization can both be obtained from the reflectance difference spectroscopy. Thus the electron-hole exchange energy and the hole-mixing energy can be completely separated and quantitatively deduced. By using this model, a (001)5 nm GaAs/7 nm Al0.3Ga0.7As superlattice sample subjected to [110] uniaxial strains has been investigated in detail. The n=1 heavy-hole (1H1E) exciton can be analyzed by this model. We find that the AES of quantum wells can be linearly tuned by the [110] uniaxial strains. The small uniaxial strains can only influence the hole-mixing interaction of quantum wells, but have almost no contribution to the electron-hole exchange interaction. (c) 2008 American Institute of Physics.

Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings

Circular dichromatic absorption difference spectroscopy is developed to measure the spin diffusion dynamics of electrons in bulk n-GaAs. This spectroscopy has higher detection sensitivity over homodyne detection of spin-grating-diffracted signal. A model to describe circular dichromatic absorption difference signal is derived and used to fit experimental signal to retrieve decaying rate of spin gratings. A spin diffusion constant of D-s=201 +/- 25 cm(2)/s for bulk n-GaAs has been measured at room temperature using this technique and is close to electron diffusion constant (D-c), which is much different from the case in GaAs quantum wells where D-s is markedly less than D-c.

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.

Quantum measurement of a solid-state qubit: A unified quantum master equation approach

Quantum measurement of a solid-state qubit by a mesoscopic detector is of fundamental interest in quantum physics and an essential issue in quantum computing. In this work, by employing a unified quantum master equation approach constructed in our recent publications, we study the measurement-induced relaxation and dephasing of the coupled-quantum-dot states measured by a quantum-point contact. Our treatment pays particular attention on the detailed-balance relation, which is a consequence of properly accounting for the energy exchange between the qubit and detector during the measurement process. As a result, our theory is applicable to measurement at arbitrary voltage and temperature. Both numerical and analytical results for the qubit relaxation and dephasing are carried out, and important features are highlighted in concern with their possible relevance to future experiments.

Quantum master-equation approach to quantum transport through mesoscopic systems

For quantum transport through mesoscopic systems, a quantum master-equation approach is developed in terms of compact expressions for the transport current and the reduced density matrix of the system. The present work is an extension of Gurvitz's approach for quantum transport and quantum measurement, namely, to finite temperature and arbitrary bias voltage. Our derivation starts from a second-order cumulant expansion of the tunneling Hamiltonian; then follows the conditional average over the electrode reservoir states. As a consequence, in the usual weak-tunneling regime, the established formalism is applicable for a wide range of transport problems. The validity of the formalism and its convenience in application are well illustrated by a number of examples.

Analysis of modes in a freestanding microsquare resonator by 3-D finite-difference time-domain

Modes in a microsquare resonator slab with strong vertical waveguide consisting of air/semiconductor/air are analyzed by three-dimensional (3-D) finite-difference time-domain simulation, and compared with that of two-dimensional (2-D) simulation under effective index approximation. Mode frequencies and field distributions inside the resonator obtained by the 3-D simulation are in good agreement with those of the 2-D approximation. However, field distributions at the boundary of the resonator obtained by 3-D simulation are different from that of the 2-D simulation, especially the vertical field distribution near the boundary is great different from that of the slab waveguide, which is used in the effective index approximation. Furthermore the quality factors obtained by 3-D simulation are much larger. than that by 2-D simulation for the square resonator slab with the strong vertical waveguide.

Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy

The in-plane optical anisotropy of three groups of GaAs/AlGaAs quantum well structures has been studied by reflectance-difference spectroscopy (RDS). For GaAs/Al0.36Ga0.64As single QW structures, it is found that the optical anisotropy increases quickly as the well width is decreased. For an Al0.02Ga0.98As/AlAs multiple QW with a well width of 20nm, the optical anisotropy is observed not only for the transitions between ground states but also for those between the excited states with transition index n up to 5. An increase of the anisotropy with the transition energy, or equivalently the transition index n, is clearly observed. The detailed analysis shows that the observed anisotropy arises from the interface asymmetry of QWs, which is introduced by atomic segregation or anisotropic interface roughness formed during the growth of the structures. More, when the 1 ML InAs is inserted at one interface of GaAs/AlGaAs QW, the optical anisotropy of the QW can be increased by a factor of 8 due to the enhanced asymmetry of the QW. These results demonstrate clearly that the RDS is a sensitive and powerful tool for the characterization of semiconductor interfaces.

Exact quantum master equation via the calculus on path integrals

An exact quantum master equation formalism is constructed for the efficient evaluation of quantum non-Markovian dissipation beyond the weak system-bath interaction regime in the presence of time-dependent external field. A novel truncation scheme is further proposed and compared with other approaches to close the resulting hierarchically coupled equations of motion. The interplay between system-bath interaction strength, non-Markovian property, and required level of hierarchy is also demonstrated with the aid of simple spin-boson systems. (C) 2005 American Institute of Physics.

Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure

The dynamics of spin-dependent tunneling through a nonmagnetic semiconductor double-barrier structure is studied including the k(3) Dresselhaus spin orbit coupling is solved by the time-dependent Schrodinger equation with a developed method for the finite-difference relaxation. The resonant peak and quasibound level lifetime are determined by the in-plane wave vector and the applied electric field. The buildup time and decay lifetime of resonant probability amplitude are different for the spin-down and spin-up electrons due to the Dresselhaus spin-orbit coupling. Further investigation shows that the steady spin-polarization in both the well and collector regions has been obtained in the time domain. (C) 2007 American Institute of Physics.

Calculation of the current noise spectrum in mesoscopic transport: A quantum master equation approach

Based on our recent work on quantum transport [X. Q. Li , Phys. Rev. B 71, 205304 (2005)], we show how an efficient calculation can be performed for the current noise spectrum. Compared to the classical rate equation or the quantum trajectory method, the proposed approach is capable of tackling both the many-body Coulomb interaction and quantum coherence on an equal footing. The practical applications are illustrated by transport through quantum dots. We find that this alternative approach is in a certain sense simpler and more straightforward than the well-known Landauer-Buttiker scattering matrix theory.

Continuous weak measurement and feedback control of a solid-state charge qubit: A physical unravelling of non-Lindblad master equation

Conventional quantum trajectory theory developed in quantum optics is largely based on the physical unravelling of a Lindblad-type master equation, which constitutes the theoretical basis of continuous quantum measurement and feedback control. In this work, in the context of continuous quantum measurement and feedback control of a solid-state charge qubit, we present a physical unravelling scheme of a non-Lindblad-type master equation. Self-consistency and numerical efficiency are well demonstrated. In particular, the control effect is manifested in the detector noise spectrum, and the effect of measurement voltage is discussed.

Finite-difference time-domain analysis of deformed square cavity filters with a traveling-wave-like filtering response by mode coupling

An add-drop filter based on a perfect square resonator can realize a maximum of only 25% power dropping because the confined modes are standing-wave modes. By means of mode coupling between two modes with inverse symmetry properties, a traveling-wave-like filtering response is obtained in a two-dimensional single square cavity filter with cut or circular corners by finite-difference time-domain simulation. The optimized deformation parameters for an add-drop filter can be accurately predicted as the overlapping point of the two coupling modes in an isolated deformed square cavity. More than 80% power dropping can be obtained in a deformed square cavity filter with a side length of 3.01 mu m. The free spectral region is decided by the mode spacing between modes, with the sum of the mode indices differing by 1. (c) 2007 Optical Society of America.

Quantum master equation scheme of time-dependent density functional theory to time-dependent transport in nanoelectronic devices

In this work a practical scheme is developed for the first-principles study of time-dependent quantum transport. The basic idea is to combine the transport master equation with the well-known time-dependent density functional theory. The key ingredients of this paper include (i) the partitioning-free initial condition and the consideration of the time-dependent bias voltages which base our treatment on the Runge-Gross existence theorem; (ii) the non-Markovian master equation for the reduced (many-body) central system (i.e., the device); and (iii) the construction of Kohn-Sham master equations for the reduced single-particle density matrix, where a number of auxiliary functions are introduced and their equations of motion (EOMs) are established based on the technique of spectral decomposition. As a result, starting with a well-defined initial state, the time-dependent transport current can be calculated simultaneously along with the propagation of the Kohn-Sham master equation and the EOMs of the auxiliary functions.

Rate-equation-based circuit model of high-speed semiconductor lasers

Based oil rare equations of semiconductor laser, a symbolically-defined model for optical transmission system performance evaluation and network characterization in both time- and frequency domains is presented. The steady-state and small-signal characteristics, such as current-photon density curve, current-voltage curve, and input impedance, call be predicted from this model. Two important dynamic characteristics, second-order harmonic distortion and two-tone third-order intermodulation products, are evaluated under different driving conditions. Experiments show that the simulated results agree well with the published data. (c) 2007 Wiley Periodicals, Inc.

Rapid photoluminescence quenching in GaInNAs quantum wells at low temperature

Temperature dependence of optical properties of GaInNAs/GaAs quantum wells (QWs) has been studied by photoluminescence (PL) and time-resolved PL. A rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results strongly suggest that the non-radiative recombination process plays a very important role at low temperature. In the TRPL measurement the shape of the PL decay curve shows significant difference under different excitation powers. It is attributed to the different involvement of non-radiative recombination in the overall recombination process. The TRPL data are well fitted with the rate equation involving both the radiative and non-radiative recombination. (c) 2006 Elsevier B.V. All rights reserved.