132 resultados para Defect Prediction
Resumo:
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.
Resumo:
Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons. the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.
Resumo:
An eigenfunction expansion-variational method based on a unit cell is developed to deal with the steady-state heat conduction problem of doubly-periodic fiber reinforced composites with interfacial thermal contact resistance or coating. The numerical results show a rapid convergence of the present method. The present solution provides a unified first-order approximation formula of the effective thermal conductivity for different interfacial characteristics and fiber distributions. A comparison with the present high-order results, available experimental data and micromechanical estimations demonstrates that the first-order approximation formula is a good engineering closed-form formula. An engineering equivalent parameter reflecting the overall influence of the thermal conductivities of the matrix and fibers and the interfacial characteristic on the effective thermal conductivity, is found. The equivalent parameter can greatly simplify the complicated relation of the effective thermal conductivity to the internal structure of a composite. (c) 2010 Elsevier Ltd. All rights reserved.
Resumo:
Salt water intrusion occurred frequently during dry season in Modaomen waterway of the Pearl River Estuary. With the development of region's economy and urbanization, the salt tides affect the region's water supply more and more seriously in recent years. Regulation and allocation of freshwater resources of the upper rivers of the estuary to suppress the salt tides is becoming important measures for ensuring the water supply security of the region in dry season. The observation data analysis showed that the flow value at the Wuzhou hydrometric station on the upper Xijiang river had a good correlation with the salinity in Modaomen estuary. Thus the flow rate of Wuzhou has been used as a control variable for suppression of salt tides in Modaomen estuary. However, the runoff at Wuzhou mainly comes from the discharge of Longtan reservoir on the upper reaches of Xijiang river and the runoff in the interval open valley between Longtan and Wuzhou sections. As the long distance and many tributaries as well as the large non-controlled watershed between this two sections, the reservoir water scheduling has a need for reasonable considering of interaction between the reservoir regulating discharge and the runoff process of the interval open watershed while the deployment of suppression flow at Wuzhou requires longer lasting time and high precision for the salt tide cycles. For this purpose, this study established a runoff model for Longtan - Wuzhou interval drainage area and by model calculations and observation data analysis, helped to understand the response patterns of the flow rate at Wuzhou to the water discharge of Longtan under the interval water basin runoff participating conditions. On this basis, further discussions were taken on prediction methods of Longtan reservoir discharge scheduling scheme for saline intrusion suppression and provided scientific and typical implementation programs for effective suppression flow process at the Wuzhou section.
Resumo:
Based on improving the wake-oscillator model, an analytical model for vortex-induced vibration (VIV) of flexible riser under non-uniform current is presented, in which the variation of added mass at lock-in and the nonlinear relationship between amplitude of response and reduced velocity are considered. By means of empirical formula combining iteration computation, the improved analytical model can be conveniently programmed into computer code with simpler and faster computation process than CFD so as to be suitable to application of practical engineering. This model is validated by comparing with experimental result and numerical simulation. Our results show that the improved model can predict VIV response and lock-in region more accurately. At last, illustrative examples are given in which the amplitude of response of flexible riser experiencing VIV under action of non-uniform current is calculated and effects of riser tension and flow distribution along span of riser are explored. It is demonstrated that with the variation of tension and flow distribution, lock-in region of mode behaves in different way, and thus the final response is a synthesis of response of locked modes.
Resumo:
In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region.