抽油杆疲劳裂纹形状比变化规律

采用断裂力学方法研究了抽油杆杆体疲劳裂纹形状比在扩展过程中的变化规律,证明无论初始形状如何,抽油杆杆体疲劳裂纹形状比在扩展过程中趋于同一个稳定数值.通过裂纹扩展实验对直径为15.9mm的抽油杆疲劳裂纹形状比进行了实验测定,发现其裂纹形状比迅速靠近0.78.

运用爆破震动来识别地下裂隙和软弱夹层

从爆破震动信号主要来源于爆破区邻近范围内地质结构的自振的观点出发，提出了一种探测地下裂隙和软弱夹层的新技术：把震源布置在裂隙和软弱夹层附近进行爆破，由于介质中裂隙和软弱夹层的存在使得局部结构的刚度减小。直接影响到爆破介质振动的速度幅值和频率，因此可以通过地表接收器接收的振动信号(包括振动速度的幅值和频率)识别出裂隙和软弱夹层的大小和形状等特征．通过无网格的数值算例分别从水平裂隙和斜裂隙的情况下总结规律说明了这种方法的可行性．

多裂纹导电薄板电热温度场和应力场的计算

讨论了对带有n个共线裂纹的薄板，在无穷远处加载电流实施止裂时板内的温度场和应力场。文中利用了复变函数的方法计算得到了电流场、温度场和应力场的分布状态。计算中考虑了材料热传导系数、线胀系数、弹性模量随温度的变化。作为算例，以带有两个共线裂纹、牌号为GH2132的高温合金制成的薄板进行了计算，给出了应力、温度与加载的电流密度及裂纹尺寸的关系；分析了导热系数随温度的变化对温度场数值的影响。

Discontinuous growth mechanisms of mode II crack under high-speed impact conditions

A recoverable plate impact testing technology has been used for studying the growth mechanisms of mode II crack. The results show that interactions of microcracks ahead of a crack tip cause the crack growth unsteadily. Failure mode transitions of materials were observed. Based on the observations, a discontinuous crack growth model was established. Analysis shows that the shear crack grows unsteady as the growth speed is between the Rayleigh wave speed c(R) and the shear wave speed c(s); however, when the growth speed approaches root 2c(s), the crack grows steadily. The transient microcrack growth makes the main crack speed to jump from subsonic to intersonic and the steady growth of all the sub-cracks leads the main crack to grow stably at an intersonic speed.

Torsion fracture behavior of drawn pearlitic steel wires with different heat treatments

In this paper, torsion fracture behavior of drawn pearlitic steel wires with different heat treatments was investigated. Samples with different heat treatments was investigated. Samples with different heat treatment conditions were subjected to torsion and tensile tests. The shear strain along the torsion sample after fracture was measured. Fracture surface of wires was examined by Scanning Electron Microscopy. In addition, the method of Differential Scanning Calorimetry was used to characterize the thermodynamic process in the heat treatment. A numerical simulation via finite element method on temperature field evolution for the wire during heat treatment process was performed. The results show that both strain aging and recovery process occur in the material within the temperature range between room temperature and 435 degrees C. It was shown that the ductility measured by the number of twists drops at short heating times and recovers after further heating in the lead bath of 435 degrees C. On the other hand, the strenght of the wire increases at short heating times and decreases after further heating. The microstructure inhomogeneity due to short period of heat treatment, coupled with the gradient characteristics of shear deformation during torsion results in localized shear deformation of the wire. In this situation, shear cracks nucleate between lamella and the wire breaks with low number of twists.

Orientation-Dependent Adhesion Strength Of A Rigid Cylinder In Non-Slipping Contact With A Transversely Isotropic Half-Space

Recently, Chen and Gao [Chen, S., Gao, H., 2007. Bio-inspired mechanics of reversible adhesion: orientation-dependent adhesion strength for non-slipping adhesive contact with transversely isotropic elastic materials. J. Mech. Phys. solids 55, 1001-1015] studied the problem of a rigid cylinder in non-slipping adhesive contact with a transversely isotropic solid subjected to an inclined pulling force. An implicit assumption made in their study was that the contact region remains symmetric with respect to the center of the cylinder. This assumption is, however, not self-consistent because the resulting energy release rates at two contact edges, which are supposed to be identical, actually differ from each other. Here we revisit the original problem of Chen and Gao and derive the correct solution by removing this problematic assumption. The corrected solution provides a proper insight into the concept of orientation-dependent adhesion strength in anisotropic elastic solids. (c) 2008 Elsevier Ltd. All rights reserved.

On The Thermally Induced Cracking Of A Segmented Coating Deposited On The Outer Surface Of A Hollow Cylinder

In this work, the thermally induced cracking behavior of a segmented coating has been investigated. The geometry under consideration is a hollow cylinder with a segmented coating deposited onto its outer surface. The segmentation cracks are modeled as a periodic array of axial edge cracks. The finite element method is utilized to obtain the solution of the multiple crack problem and the Thermal Stress Intensity Factors (TSIFs) are calculated. Based on dimensional analysis, the main parameters affecting TSIFs are identified. It has been found that the TSIF is a monotonically increasing function of segmentation crack spacing. This result confirms that a segmented coating exhibits much higher thermal shock resistance than an intact counterpart, if only the segmentation crack spacing is narrow enough. The dependence of TSIF on some other parameters, such as normalized time, segmentation crack depth, convection severity as well as material constants, has also been discussed. (C) 2008 Elsevier B.V. All rights reserved.

Optical and surface properties of hybrid TiO2/ormosil planar waveguide prepared by the sol-gel process

Two kinds of silanes, 3-glycidoxypropyltrimethoxysilane (GLYMO) and 3-trimethoxysililpropylmethacrylate (TMSPM), were used to prepare ormosil waveguide films by the sol-gel method. Thirty percent Ti(OBu)(4) and 70% silane were contained in the precursor sets. The properties of films were measured by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), UV/VIS/NIR spectrophotometer (UV-vis), atomic force microscopy (AFM), m-line and scattering-detection method. The films from GLYMO and TMSPM precursors exhibit similar thickness (2.58 mu m for GLYMO, 2.51 mu m for TMSPM) and refractive index (1.5438 for GLYMO, 1.5392 for TMSPM, lambda=632.8 nm), but the film from TMSPM precursor has higher propagation loss (1.024 dB/cm, lambda=632.8 nm) than the film prepared from GLYMO (0.569 dB/cm, lambda=632.8 nm). Furthermore, the film prepared from TMSPM is easy to be opaque and cracks during coating whereas the same phenomenon was not found for the film prepared with GLYMO. It is confirmed that GLYMO is a better precursor than TMSPM for waveguide film preparation. (C) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

ScAlMgO_4晶体的生长缺陷

采用提拉法生长出φ30 mm×55 mm的ScAlMgO4晶体。在晶体生长过程中有轻微的挥发,粉末X射线衍射分析表明:挥发物质为MgO单相。运用扫描电镜、光学显微镜以及高分辨X射线衍射仪对晶体中的包裹物、开裂、生长条纹和小角晶界缺陷进行了研究。结果表明:温度梯度和热应力是形成晶体中缺陷的主要原因。通过合理设计温场,控制固-液界面的形状及冷却过程的降温速率,可以提高晶体的完整性。

Study of thermal behaviors in CO2 laser irradiated glass

To understand mechanisms underlying laser-induced damage of BK7 and fused silica, we calculate the temperature field of the substrates with CO2 laser irradiating at a given laser power and beam radius. We find that the two glasses show different thermal behaviors. A model is developed for estimating the time t to heat the surface of the substrates up to a particular temperature T with cw CO2 laser irradiation. We calculate theoretically the duration t that the samples are irradiated, from the beginning to visual catastrophic damage, with the assumption of damage threshold determined by the critical temperature. The duration t that the samples are irradiated, from the beginning to visual catastrophic damage, is investigated experimentally as well. Here we take the melting point or softening point as the critical temperature, given the thermomechanical coupling properties, which is enough to cause damage for BK7. Damage features are characterized by the sound of visual cracks. Finally, we calculate stresses induced by laser heating. The analysis of stress indicates that the damage of BK7 is due to the stresses induced by laser heating. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Study of thermal behaviors in CO2 laser irradiated glass

To understand mechanisms underlying laser-induced damage of BK7 and fused silica, we calculate the temperature field of the substrates with CO2 laser irradiating at a given laser power and beam radius. We find that the two glasses show different thermal behaviors. A model is developed for estimating the time t to heat the surface of the substrates up to a particular temperature T with cw CO2 laser irradiation. We calculate theoretically the duration t that the samples are irradiated, from the beginning to visual catastrophic damage, with the assumption of damage threshold determined by the critical temperature. The duration t that the samples are irradiated, from the beginning to visual catastrophic damage, is investigated experimentally as well. Here we take the melting point or softening point as the critical temperature, given the thermomechanical coupling properties, which is enough to cause damage for BK7. Damage features are characterized by the sound of visual cracks. Finally, we calculate stresses induced by laser heating. The analysis of stress indicates that the damage of BK7 is due to the stresses induced by laser heating. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

退火对HfO2/SiO2多层膜残余应力的影响

用电子束蒸发方法在BK7基底上沉积了HfO2/SiO2多层膜。研究了200℃到400℃的退火对残余应力的影响。结果表明退火前的薄膜残余应力为压应力，在200℃退火后发展为张应力，然后张应力值随着退火温度的升高而增大。在400℃退火后，由于张应力太大，薄膜表面出现了裂纹。同时，随着退火温度的升高，晶粒尺寸长大，晶面间距降低。残余应力的变化与结构的演变相对应。

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire by hydride vapor phase epitaxy (HVPE) are investigated using nanoindentation with a Berkovich indenter, cathodoluminescence (CL), and Raman microscopy. Results show that nonpolar GaN is more susceptible to plastic deformation and has lower hardness than c-plane GaN. After indentation, lateral cracks emerge on the nonpolar GaN surface and preferentially propagate parallel to the < 11 (2) over bar0 > orientation due to anisotropic defect-related stresses. Moreover, the quenching of CL luminescence can be observed to extend exclusively out from the center of the indentations along the < 11 (2) over bar0 > orientation, a trend which is consistent with the evolution of cracks. The recrystallization process happens in the indented regions for the load of 500 mN. Raman area mapping indicates that the distribution of strain field coincides well with the profile of defect-expanded dark regions, while the enhanced compressive stress mainly concentrates in the facets of the indentation.