On equations for regular languages, finite automata, and sequential networks

We consider systems of equations of the form where A is the underlying alphabet, the Xi are variables, the Pi,a are boolean functions in the variables Xi, and each δi is either the empty word or the empty set. The symbols υ and denote concatenation and union of languages over A. We show that any such system has a unique solution which, moreover, is regular. These equations correspond to a type of automation, called boolean automation, which is a generalization of a nondeterministic automation. The equations are then used to determine the language accepted by a sequential network; they are obtainable directly from the network.

The Category-Theoretic Solution of Recursive Domain Equations

Recursive specifications of domains plays a crucial role in denotational semantics as developed by Scott and Strachey and their followers. The purpose of the present paper is to set up a categorical framework in which the known techniques for solving these equations find a natural place. The idea is to follow the well-known analogy between partial orders and categories, generalizing from least fixed-points of continuous functions over cpos to initial ones of continuous functors over $\omega $-categories. To apply these general ideas we introduce Wand's ${\bf O}$-categories where the morphism-sets have a partial order structure and which include almost all the categories occurring in semantics. The idea is to find solutions in a derived category of embeddings and we give order-theoretic conditions which are easy to verify and which imply the needed categorical ones. The main tool is a very general form of the limit-colimit coincidence remarked by Scott. In the concluding section we outline how compatibility considerations are to be included in the framework. A future paper will show how Scott's universal domain method can be included too.

Characteristic of the ultrawideband electromagnetic radiation generated by PCSS

A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semiconductor switches (PCSS) is presented. Gallium arsenide is used to develop the PCSS for an ultrashort electromagnetic pulse source. The pulse generated by such PCSS is within picosecond (ps) time scale, and can yield power pulse with an voltage over 10 kV. The experimental results show that the pulses are stable, with the peak-peak amplitude change of 6% and the time jitter within several picoseconds. The radiations of the PCSS triggered by the picosecond laser and fenitosecond laser pulse series illustrate that the electromagnetic pulses would have high repetition of more than 80 MHz and frequency bandwidth of DC-6 GHz. The radiations of "lock-on " mode of the PCSS are also analyzed here. (c) 2007 Wiley Periodicals, Inc.

ON THE RATE-EQUATIONS OF SEMICONDUCTOR-LASERS FOR MEASURING SPONTANEOUS EMISSION FACTOR

The rate equations used for measuring spontaneous emission factor beta is examined through the comparison of numerical results, The results show that beta obtained by using total spontaneous emission rate R(sp) = N/tau sp is about double of that using R(sp) = BN2, The magnitude difference between the measured beta and that predicted by classical theory [8] will disappear by using more reasonable R(sp) = BN2. The results also show that the magnitude of beta may be underestimated by ignoring the nonradiative recombination rates.

Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode

We solve the single mode coupled rate equations by computer, simulate the behavior of a gain switch of an AlGalnP red light semiconductor laser diode, and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.

Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET

Radiation hardness of SIMOX(separation by implanted oxygen)/NMOSFET by implanting N and F ion has been carefully studied in this paper.Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently improves the radiation hardness,especially under high dose radiation conditions.Moreover,experimental data show that the higher dose of the N and F ion implantation is,the better radiation hardness is achieved.In order to minimize the influence on the threshold voltage of devices,it is important to choose suitable implantation dose and energy of N or F implantation that have smaller impact on the preradiation device performance.