Measurement of trace phosphorus in dichlorosilane by high-temperature hydrogen reduction gas chromatography

Dichlorosilane, a gas at normal temperature with a boiling point of 8.3 degrees C, is very difficult to sample and detect using conventional methods. We reduced phosphorus in dichlorosilane to PH3 by hydrogen at high temperature, then PH3 was separated from chlorosilanes by NaOH solution and from other hydrides by chromatographic absorption. Thus the problem of interference of chlorosilanes and other hydrides was overcome and PH, was measured by a double flame photometric detector at 526 nm. This method was sensitive, reliable and convenient and the sensitivity reached as low as 0.04 mu g/l.

Threshold behavior in backgating in GaAs metal-semiconductor field-effect transistors: Induced by limitation of channel-substrate junction to leakage current

An analytical model is proposed to understand backgating in GaAs metal-semiconductor field-effect transistors (MESFETs), in which the effect of channel-substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000-4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. (C) 1997 American Institute of Physics.

A High Speed, 12-Channel Parallel, Monolithic Integrated CMOS OEIC Receiver

The design and fabrication of a high speed, 12-channel monolithic integrated CMOS optoelectronic integrated circuit(OEIC) receiver are reported.Each channel of the receiver consists of a photodetector,a transimpedance amplifier,and a post-amplifier.The double photodiode structure speeds up the receiver but hinders responsivity.The adoption of active inductors in the TIA circuit extends the-3dB bandwidth to a higher level.The receiver has been realized in a CSMC 0.6μm standard CMOS process.The measured results show that a single channel of the receiver is able to work at bit rates of 0.8～1.4Gb/s. Altogether, the 12-channel OEIC receiver chip can be operated at 15Gb/s.

High-quality metamorphic HEMT grown on GaAs substrates by MBE

Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.

Effect of Nozzle Temperature on the Performance of a 1 kW H2-N2 Arcjet Thruster

A 1 kW-class arcjet thruster was ¯red in a vacuum chamber at a pressure of 18 Pa. A gas mixture of H2 : N2 = 2.8 : 1.5 in volume at a total °ow rate of 4.3 slm was used as the propellant with an input power ¯xed at 860 W. The time-dependent thrust, nozzle temperature and inlet pressure of the propellant were measured simultaneously. Results showed that with the increase in nozzle temperature the thrust decreased and various losses increased. The physical mechanisms involved in these effects are discussed.

Temperature effects of CsI(Tl) crystal detector with APD readout

The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/degrees C in the region from -2 degrees C to 8 degrees C, and by 0.33%/degrees C in the region from 8 degrees C to 25 degrees C, while the gain of the tested APD decreases by -3.68%/degrees C (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV gamma ray from Cs-137 radiation source.

PIC mode simulation of solenoid collimation channel

A new SSC (Separated Sector Cyclotron)-Linac is being designed to serve as an injector for the SSC at the HIRFL (Heavy Ion Research Facility Lanzhou). The beam intensity at the LEBT (Low Energy Beam Transport) for the heavy ions after the selection is typically low and the space charge effects are inconspicuous. The space charge effects become obvious when the beam current increases to a few hundred microamperes. The emittance growth deriving from the space charge effects may be particularly troublesome for the following linac and cyclotron. An optical system containing three solenoids has been designed for the LEBT to limit the beam emittance and to avoid the unnecessary beam loss in the cyclotron, as well as for the purpose of immunizing the LEBT emittance growth due to the space charge effects. The results of the PIG (Particle-In-Cell) mode simulation illustrate that this channel could limit the beam emittance growth and increase the beam brightness.

Flow-through room temperature phosphorescence optosensing for the determination of lead in sea water

The chelates formed between the heavy metal ion Pb(II) and the reagents 8-hydroxy-5-quinolinesulphonic acid, 8-hydroxy-7-quinolinesulphonic acid and 8-hydroxy-7-iodo-5-quinolinesulphonic acid exhibit strong room temperature phosphorescence (RTP) if retained on the surface of anion exchange resin beads. Based on the on-line formation, in a flow-injection system, of such RTP lead chelates and their transient immobilization on an anion exchange resin, three flow-through optosensing systems are investigated for lead in sea water. Optimum experimental conditions and the analytical performance characteristics of the three optosensors are discussed. Relative standard deviations (RSDs) of the order of 3% are typical at 100 ng ml−1 Pb(II) and the active sensing phases can easily be regenerated by passing 500 μl of 6 M hydrochloric acid. A lead(II) detection limit of 0.1 ng ml−1 (3×background SD, for 2 ml sample injection volumes) was achieved for the optosensor based on 8-hydroxy-7-quinolinesulphonic acid. Possible interferences present in sea water, including cations and anions which could affect the sensor response, are discussed in detail. Finally, the selected RTP flow-through optical sensor has been successfully tested for the determination of lead in sea water at a few ng ml−1.

Mo的掺杂对Ce_(0.8)Gd_(0.2)O_(1.9)烧结温度及电性能的影响

掺杂的CeO2基固体电解质因其在中低温条件下(500￣700℃)具有高氧离子电导率而成为有希望的IT-SOFCs(intermediate temperature-solid oxide fuel

Microstructure and mechanical property of Mg-8.31Gd-1.12Dy-0.38Zr alloy

The Mg-8.31Gd-1.12Dy-0.38Zr (mass%) alloy was prepared by casting technology, and the microstructure, age hardening behavior and mechanical property have been investigated. It is noted that the alpha-Mg and the different Mg-RE (RE = Gd/Dy) compounds are subsistent in the as-cast and annealed state samples. The age hardening behavior is observed during the investigated temperature range, and the alloy exhibits high Vickers hardness, excellent ultimate tensile strength and yield strength at peak hardness.