Influence of implantation energy on the characteristics of Mn-implanted nonpolar a-plane GaN films

Nonpolar GaN Mn films have been fabricated by implanting Mn-ion into nonpolar a-plane (MO) GaN films at room temperature. The influence of implantation energy on the Structural, morphological and magnetic characteristics of samples have been investigated by means of stopping and range of ions in matter (SRIM) Simulation software, high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). According to the SQUID analysis, obvious room temperature ferromagnetic properties of samples were detected. Moreover, the implantation energy has little impact on the ferromagnetic properties of samples. The XRD and AFM analyses show that the structural and morphological characteristics of samples were severely deteriorated with the increase of implantation energy. (C) 2008 Elsevier B.V. All rights reserved.

Theoretical investigation of intersubband transition in AlxGa1-xN/GaN/AlyGa1-yN step quantum well

A modified self-consistent method is introduced for the design of AlxGa1-xN/GaN step quantum well (SQW) with the position and energy-dependent effective mass. The effects of nonparabolicity are included. It is shown that the nonparabolicity effect is minute for the lowest subband energy level and grows in size for the higher subband states. The effects of nonparabolicity have significant influence on the transition energies and the oscillator strengths and should be taken into account in the investigation of the optical transitions. The strong asymmetric property introduced by the step quantum well magnifies the weak intersubband transition from the ground state to the third state (1 -> 3). It is shown that in an appropriate scope, the intersubband transition (1 -> 3) has the comparable oscillator strength with transition from the ground state to the second one (1 -> 2), which suggests the possible application of the two-color photodetectors. The results of this work should provide useful guidance for the design of optically pumped asymmetric quantum well lasers and quantum well infrared photodetectors (QWIPs). (c) 2005 Elsevier B.V. All rights reserved.

Nanocavity shrinkage and preferential amorphization during irradiation in silicon

We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. The results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.

Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers

A series of (Ga, Mn)As epilayers have been prepared on semi-insulating GaAs (001) substrates at 230 degrees C by molecular-beam epitaxy under fixed temperatures of Ga and Mn cells and varied temperatures of the As cell. By systematically studying the lattice constants, magnetic and magneto-transport properties in a self-consistent manner, we find that the concentration of As antisites monotonically increases with increasing As flux, while the concentration of interstitial Mn defects decreases with it. Such a trend sensitively affects the properties of (Ga, Mn)As epilayers. (c) 2006 Elsevier Ltd. All rights reserved.

Quantum transport from the perspective of quantum open systems

By viewing the non-equilibrium transport setup as a quantum open system, we propose a reduced-density-matrix based quantum transport formalism. At the level of self-consistent Born approximation, it can precisely account for the correlation between tunneling and the system internal many-body interaction, leading to certain novel behavior such as the non-equilibrium Kondo effect. It also opens a new way to construct time-dependent density functional theory for transport through large-scale complex systems. (c) 2006 Elsevier B.V. All rights reserved.

Selective growth of InAs islands on patterned GaAs (100) substrate

By a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid-source molecular beam epitaxy. It is found that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. When a InxGa(1-x)As strained layer is grown first before InAs deposition, almost all the InAs quantum dots are deposited at the edges of the top ridge. And when the InAs deposition amount is larger, a quasi-quantum wire structure is found. The optical properties of the InAs dots on the patterned substrate are also investigated by photoluminescence. (c) 2005 Elsevier Ltd. All rights reserved.

Lasing of CdSSe quantum dots in glass spherical microcavity

Glass spherical microcavities containing CdSSe semiconductor quantum dots (QDs) of a few microns in diameter are fabricated using a physical method. When a single glass microspherical cavity is excited by a laser beam at room temperature, very strong and sharp whispering gallery modes are shown on the background of PL spectra of CdSSe QDs, which confirms that coupling between the optical emission of embedded QDs and spherical cavity modes is realized. For a glass microsphere only 4.6 mum in diameter, it was found that the energy separation is nearly up to 26 nm both for TE and TM modes. With the increasing excitation intensity, the excitation intensity dependence of the emission intensity is not linear in the double-logarithmic scale. Above the threshold value, the linewidths of resonance modes become narrower. The lasing behavior is achieved at relatively low excitation intensity at room temperature. High optical stability and low threshold value make this optical system promising in visible microlaser applications. (C) 2002 Elsevier Science B.V. All rights reserved.

Exciton energy of the InAs/GaAs self-assembled quantum dot in a semiconductor microcavity

We report on the theoretical study of the interaction of the quantum dot (QD) exciton with the photon waveguide models in a semiconductor microcavity. The InAs/GaAs self-assembled QD exciton energies are calculated in a microcavity. The calculated results reveal that the electromagnetic field reduces the exciton energies in a semiconductor microcavity. The effect of the electromagnetic field decreases as the radius of the QD increases. Our calculated results are useful for designing and fabricating photoelectron devices.

Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001)

Molecular beam epitaxy has been used for growing InGaAs self-assembled quantum dots (QDs) in InAlAs on an InP(001) substrate. Nominal deposition of 9.6 monolayers of In0.9Ga0.1As results in QDs of similar to 6.5 nm high with an areal density of 3.3 X 10(11) cm(-2). Conspicuous bimodal size distribution is identified, and is responsible for the observed QDs photoluminescence (PL) emission with two peaks at 0.627 and 0.657 eV. Good agreement is achieved between the observed PL peak energies and calculated results. (C) 1999 American Institute of Physics. [S00218979(99)00101-2].

Simulation of single electronic device and robust circuit construction

The article mainly focuses on the simulation of the single electron device and circuit. The orthodox model of single electronic device is introduced and the simulation with Matlab and Pspice is illustrated in the article. Moreover, the built of robust circuit using single electronic according to neural network is done and the simulation is also included in the paper. The result shows that neural network added with proper redundancy is an available candidate for single electron device circuit. The proposed structure is also promising for the realization of low ultra-low power consumption and solution of transient device failure.

需求变更影响分析模型及相关技术研究

需求是后续开发活动的基准，早期的一些研究者认为应该在需求完全确定之后再进行后续开发，Royce所提出的瀑布模型就是这种思想的一个体现。但是，实践经验告诉我们，不管前期的需求分析做的多么完美，需求还是会发生变更。一方面是因为需求本身很复杂，对它的分析、理解和描述是一个循序渐进的过程，不可能一蹴而就；另一方面由于用户期望和偏好的改变、市场环境的转变、使用环境的日益复杂、技术的革新等都会使得原有的软件系统无法满足各涉众的利益。因此，需求变更是软件开发中固有的规律，是不可避免和普遍存在的。 需求变更通常会导致需求间及需求与后续工作产品间的不一致。因此，频繁的需求变更会造成产品质量下降、进度延期、成本超支等问题。变更影响分析(Change Impact Analysis)通过分析变更对象及其相关工作产品间的关系来评估变更造成的影响，从而控制变更。现有方法多数是从软件维护的角度，对代码的变更影响进行分析，过于细节和技术化，不能对需求变更影响分析提供有力支持。即使针对需求变更的影响分析方法也只是基于形式化需求规约，通过分析需求间的关系来识别影响范围，并未考虑需求变更对后续工作产品造成的影响，同时形式化需求规约的应用困难也限制了该方法的实用性。此外，随着需求和工作产品的规模与复杂性日益增加，使得手工建立和维护需求间及需求与工作产品间关系面临着不小的难度。 基于以上分析，本文提出了针对自然语言需求规约的需求变更影响分析模型RCIAM (Requirement Change Impact Analysis Model)，围绕着如何自动识别和筛选需求间的关系——横向需求跟踪关系(Horizontal Requirement Traceability)、如何自动识别和筛选需求与工作产品间的关系——纵向需求跟踪关系(Vertical Requirement Traceability)、如何较全面的进行需求变更影响计算和决策三个问题展开了研究。 本文的主要贡献有： (1) 提出了需求变更影响分析模型RCIAM 本文对RCIAM进行了形式化定义。该模型不但提供了需求变更影响分析算法和对决策的支持，还提供了自动识别横向和纵向需求跟踪关系的方法。RCIAM主要包含数据处理和数据分析两个层次。数据处理层采用了文本处理(Text Processing)技术实现了横向和纵向需求跟踪关系的自动识别，为数据分析层提供需求跟踪关系数据；数据分析层基于需求跟踪关系数据，在产生需求变更申请(Change Request)时，进行量化影响计算，并提供决策支持。 (2) 提出了横向需求跟踪关系的识别与筛选方法 在对自然语言需求规约文档进行深入分析后，我们发现了两种与需求变更影响密切相关的关系类型，并从文本相似性的角度将它们定义为相似跟踪关系和引用跟踪关系。在将需求项拆分为需求片段的基础上，利用信息检索技术(Information Retrieval，IR)计算需求片段间的文本相似度，并设计了相应的算法对相似跟踪关系和引用跟踪关系进行自动识别。最后，提出了“变更影响跟踪”的规则来辅助对候选跟踪关系的人工筛选。 (3) 提出了纵向需求跟踪关系的识别与筛选方法 已有的研究多采用IR技术来自动建立需求与工作产品之间的跟踪关系，但是却存在着精度不理想的问题。我们从查全率(Recall)和查准率(Precision)的角度，分析了应用IR技术自动建立需求与代码跟踪关系的方法中产生的错误关系，发现了造成精度问题的根源所在。依据这一发现，基于现有方法，本文方法加入了相关反馈(Relvant Feedback)辅助识别和代码注释信息辅助识别等改进措施，并提供了人工筛选策略。 (4) 提出了需求变更影响分析计算与决策方法 本文通过矩阵运算说明了需求变更影响通过需求跟踪关系传播到其它需求和工作产品的过程，并设计了相应的需求变更影响分析算法。该算法考虑变更发生在不同阶段时对不同类型工作产品的影响，采用变更类型和关系强度两个因子加权计算影响值，并提出了根据影响值来进行变更决策的方法。 (5) 应用研究 结合中科方德公司Qone平台的开发，对以上工作进行了应用研究和性能分析。在Qone平台的需求管理工具版本1.0的开发中，首先采用本文方法对横向和纵向需求跟踪关系进行了自动识别，然后对开发期间发生的十次需求变更申请进行了影响分析和决策。在项目完成后，设计了实验对横向和纵向需求跟踪关系的识别进行了性能分析。结果表明，本文方法能够有效辅助进行需求变更影响分析。