Xe~(23+)离子辐照Al_2O_3的光谱特性

本工作研究460 keV、3 MeV和308 MeV Xe23+辐照Al2O3单晶样品的光致发光特性。从经过460 keV Xe23+辐照后样品的光致发光测试结果可看到,波长为380、413和450 nm的发光峰明显增强,在390和564 nm处出现了新的发光峰。从3 MeV的Xe23+辐照后样品谱的变化可看到,在较低剂量条件下,516 nm(2.4 eV)和564 nm(2.2 eV)处的发光峰随辐照剂量增加而增强,且当剂量增到1×1016cm-2时,564 nm处的发光峰消失,只有516 nm(2.4 eV)处的发光峰较强。从308 MeV Xe23+辐照后样品的光致发光谱中可看到,357 nm(3.47 eV)和516 nm(2.4 eV)处的发光峰随着剂量增加明显增强。辐照后样品的FTIR谱显示:波数在460~510 cm-1和630 cm-1附近的吸收是Al2O3振动模式,经离子辐照后,吸收带展宽;1 000~1 300 cm-1间为Al—O—Al桥氧键的伸缩振动模式,高能辐照后的吸收带向低波数方向移动。

离子注入/辐照引起Al_2O_3单晶的改性研究

600 K温度下用110 keV的He+,Ne+,Ar+离子注入及320 K温度下用230 MeV的208Pb27+辐照Al2O3单晶样品,研究了离子注入和辐照对Al2O3单晶样品结构和光学特性的影响。从测得的光致发光谱可以清楚地看到,所有样品在波长为375,413和450 nm处出现了强的发光峰,且所有5×1016ion/cm2注入样品的发光峰均最强。经过高能Pb辐照后的样品,在390 nm处出现了新的发光峰。透射电镜分析发现在注入氖样品100 nm入射深度以内形成了高浓度的小空洞(1—2 nm),在Ne沉积区域有少量大空洞形成。傅立叶变换红外光谱分析发现,波数在460—510 cm-1间的振动吸收带经过离子辐照后展宽,随着辐照量的增大,该振动吸收强度显著减弱。1 000—1 300 cm-1对应Al-O-Al桥氧伸缩振动模式的吸收带,辐照后向高波数方向移动。对离子注入和辐照对Al2O3单晶样品结构损伤机理进行了初步探讨。

高电荷态离子Ar~(q+)入射在金属表面形成靶原子X射线谱

本文报道低能高电荷Ar12+、Ar13+、Ar14+离子与金属Mo表面作用过程中Mo原子受激发射X射线和X射线强度随入射能量变化的实验结果。结果表明,低速高电荷离子与金属表面原子相互作用可有效地激发靶原子或靶离子内壳层电子而发射X射线。

HIRFL-CSR电子冷却远程控制系统的设计与实现

介绍了利用LonWorks现场总线技术,实现了一个低成本、高可靠性的HIRFL-CSR电子冷却远程控制系统。

~(143)Nd中高自旋同质异能态的识别与研究

利用能量为 80MeV的18O束流 ,通过130 Te( 18O ,5n)反应研究了143Nd的高自旋态能级结构 .基于γ γ延迟符合、γ射线的角分布及线性极化测量 ,首次发现了143Nd的一个半寿命为 ( 35± 8)ns,自旋和宇称为 4 9/ 2 + 的同质异能态 .用形变独立粒子模型探讨了此同质异能态的形成机制

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.