Photocurrent response in a double barrier structure with quantum dots-quantum well inserted in central well

We report the photocurrent response in a double barrier structure with quantum dots-quantum well inserted in central well. When this quantum dots-quantum well hybrid heterostructure is biased beyond + 1 or -I V, the photocurrent response manifests itself as a steplike enhancement, increasing linearly with the light intensity. Most probably, at proper bias condition, the pulling down of the X minimum of GaAs at the outgoing interface of the emitter barrier by the photovoltaic effect in GaAs QW will initiate the r,-X-X tunneling at much lower bias as compared with that in the dark. That gives rise to the observed photocurrent response. (c) 2006 Elsevier B.V. All rights reserved.

Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells

Optical transient current spectroscopy (OTCS), photoluminescence (PL) spectroscopy and excitonic electroabsorption spectroscopy have been used to investigate the evolution of defects in the low-temperature grown GaAs/AlGaAs multiple quantum well structures during the postgrowth rapid thermal annealing. The sample was grown at 350 degrees C by molecular beam epitaxy on miscut (3.4 degrees off (001) towards (111)A) (001) GaAs substrate. After growth, the sample was subjected to 30s rapid thermal annealing in the range of 500-800 degrees C. It is found that the integrated PL intensity first decreases with the annealing temperature, then gets a minimum at 600 degrees C and finally recovers at higher temperatures. OTCS measurement shows that besides As,, antisites and arsenic clusters, there are several relatively shallower deep levels with excitation energies less than 0.3 eV in the as-grown and 500 degrees C-annealed samples. Above 600 degrees C, OTCS signals from As,, antisites and shallower deep levels become weaker, indicating the decrease of these defects. It is argued that the excess arsenic atoms group together to form arsenic clusters during annealing. (C) 2000 Elsevier Science B.V. All rights reserved.

Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum wells by using photoluminescence (PL) and double-crystal X-ray diffraction (DCXRD) measurements. It is found that a distinct additional PL emission peak can be observed for the annealed samples. This PL emission possesses features similar to the PL emission from InGaAs/GaAs quantum dots (QDs) with the same indium content. It is proposed that this emission stems from QDs, which were formed during the annealing process. This formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the InGaAs layer intersurface. The DCXRD measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures. (C) 2000 Elsevier Science B.V. All rights reserved.

The Fabrication of Eight-Channel DFB Laser Array Using Sampled Gratings

An eight-channel monolithically integrated complex-coupled distributed-feedback laser array based on sampled gratings has been designed and fabricated. Selective lasing at different wavelengths is obtained. The frequency separation between each adjacent channel is about 200 GHz. The typical threshold current is between 30 and 40 mA. The optical output power of each channel is about 10 mW at an injection current of 100 mA. The continuous tuning of emission wavelength with injected currents is also demonstrated.

Kinetic Model Study on Enzymatic Hydrolysis of Cellulose Using Artificial Neural Networks

Enzymatic hydrolysis of cellulose was highly complex because of the unclear enzymatic mechanism and many factors that affect the heterogeneous system. Therefore, it is difficult to build a theoretical model to study cellulose hydrolysis by cellulase. Artificial neural network (ANN) was used to simulate and predict this enzymatic reaction and compared with the response surface model (RSM). The independent variables were cellulase amount X-1, substrate concentration X-2, and reaction time X-3, and the response variables were reducing sugar concentration Y-1 and transformation rate of the raw material Y-2. The experimental results showed that ANN was much more suitable for studying the kinetics of the enzymatic hydrolysis than RSM. During the simulation process, relative errors produced by the ANN model were apparently smaller than that by RSM except one and the central experimental points. During the prediction process, values produced by the ANN model were much closer to the experimental values than that produced by RSM. These showed that ANN is a persuasive tool that can be used for studying the kinetics of cellulose hydrolysis catalyzed by cellulase.

Synthesis and random laser application of ZnO nano-walls: a review

This review paper summarises briefly some important achievements of our recent research on the synthesis and novel applications of nanostructure ZnO such as honeycomb shaped 3-D (dimension) nano random-walls. A chemical reaction/vapour transportation deposition technique was employed to fabricate this structure on ZnO/SiO2/Si substrate without any catalyst and additive in a simple tube furnace to aim the low-cost and high qualified samples. Random laser action with strong coherent feedback at the wavelength between 375 nm and 395 nm has been firstly observed under 355 nm optical excitation with threshold pumping intensity of 0.38 MW/cm(2).

基于日雨量的延安地区降雨侵蚀力动态特征分析

延安地区是黄土高原水土流失最为严重的地区之一。利用延安气象站1951-2005年的日降雨量数据,采用日雨量侵蚀力模型估算延安地区降雨侵蚀力,结果表明:该地区降雨侵蚀力主要集中在6-9月,占到了全年的85.6%。年降雨侵蚀力的平均值为1765.73MJ.mm/(hm2.h),55年间,年降雨侵蚀力变异程度适中,从整体上看,趋势保持平稳,其离差系数Cv和变异趋势系数r分别为0.41和-0.071。

稀土元素荧光光度分析方法的研究

稀土元素的荧光光度分析是一类重要的分析方法，是元素荧光分析的一个重要方面。而在稀土元素总量中测定某一个单独的稀土元素，且是一种必然的要求。目前人们也在知方百计地寻找各种方法以提高荧光法的灵敏度、选择性及稳定性基于此本文做了如下三个方面的工作：一、7-碘-8-羟基喹啉-5-磺酸=溶化十六烷三甲铵荧光光度法测定痕量谱。。荥光法测定镨的报道十分罕见，8-羟基喹啉及共衍生物是带用的荧光试剂之一。它们已被广泛应用于铝、鎵、铟、锌、镉、锆、镧、钇等元素的荧光测定中，应用表面活性剂的胶束荧光体系带具有增铬、增数、增稳，提高选择性，改善实验条件的特点。在此基础上并建立了一些高灵敏度、高选择性的荧光分析方法。但用8-羟基喹啉衍生物测定镨的荧光法研究还未见报道。本文研究了镥-7-碘-8-羟茎喹啉-5-磺酸-表面活性剂的三元荧光体系，试验并确定了配合物形成的条件，不同表面活性剂对此体系的增敏作用表明：溴化十六烷茎二甲铵（CTMAB）的增敏效果最好，测定镥的最低浓度可达8.8ng/ml，试验了其它共存离子的影响，通过萃取色谱分离后，本方法可较好的用于测定天然混合稀坤的镥。二、偏最小二乘法（PLS）荧光光度法同时测定锌、铽、镨。通过直接激发便稀土离子产生荧光进行荧光分析的方法称直接荧光法（或无试剂荧光法）用这种方法对锌、铽、镨分别测定已有报道，但在用直接荧光法同时测定锌、铽、镨时彼此互相干扰，为解决这个问题，本文将PLS法应用荧光光度法直接同时测定铈、铽、镨、各取了三个水平9个标准样，在355-560nm之间选择27个发射波长点测量荧光强度。并引入不相容因子来检验结果的可靠性，此法用于龙南稀土样品中铈、铽、镨的同时测定，获得了满意的结果。三、Eu~(3+)-2-喀吩甲酰三氟丙酮-N_(263)-Triton X-100体系荧光分光光度测定痕量的铕本文首次提出了Eu~(3+)-TTA-N——（263）-Triton X-100体系的荧光光度法测定铕，试验了该荧光体系的检测下限可述，0.9ng/ml，并可允许存在一定量的其它共存稀土元素，较好地应用直接测定包头混合稀土氧化物中的痕量铕。