Calculation of propagation loss in photonic crystal waveguides by FDTD technique and Pade approximation

The propagation losses in single-line defect waveguides in a two-dimensional (2D) square-lattice photonic crystal (PC) consisted of infinite dielectric rods and a triangular-lattice photonic crystal slab with air holes are studied by finite-difference time-domain (FDTD) technique and a Pade approximation. The decaying constant beta of the fundamental guided mode is calculated from the mode frequency, the quality factor (Q-factor) and the group velocity v(g) as beta = omega/(2Qv(g)). In the 2D square-lattice photonic crystal waveguide (PCW), the decaying rate ranged from 10(3) to 10(-4) cm(-1) can be reliably obtained from 8 x 10(3)-item FDTD output with the FDTD computing time of 0.386 ps. And at most 1 ps is required for the mode with the Q-factor of 4 x 10(11) and the decaying rate of 10(-7) cm(-1). In the triangular-lattice photonic crystal slab, a 10(4)-item FDTD output is required to obtain a reliable spectrum with the Q-factor of 2.5 x 10(8) and the decaying rate of 0.05 cm(-1). (c) 2004 Elsevier B.V. All rights reserved.

Comparison of cooling rates for hot carriers in GaAs AlAs quantum wells based on macroscopic and microscopic phonon models

By using three analytical phonon models in quantum wells-the slab model, the guided-mode model, and the improved version of the Huang-Zhu model [Phys. Rev. B 38, 13 377 (1998)], -and the phonon modes in bulk, the energy-loss rates of hot carriers due to the Frohlich potential scattering in GaAs/AlAs multiple quantum wells (MQW's) are calculated and compared to those obtained based on a microscopic dipole superlattice model. In the study, a special emphasis is put on the effects of the phonon models on the hot-carrier relaxation process when taking the hot-phonon effect into account. Our numerical results show that, the calculated energy-loss rates based on the slab model and on the improved Huang-Zhu model are almost the same when ignoring the hot-phonon effect; however, with the hot phonon effect considered, the calculated cooling rate as well as the hot phonon occupation number do depend upon the phonon models to be adopted. Out of the four analytical phonon models investigated, the improved Huang-Zhu model gives the results most close to the microscopic calculation, while the guided-mode model presents the poorest results. For hot electrons with a sheet density around 10(12)/cm(2), the slab model has been found to overestimate the hot-phonon effect by more than 40% compared to the Huang-Zhu model, and about 75% compared to the microscopic calculation in which the phonon dispersion is fully included. Our calculation also indicates that Nash's improved version [J. Lumin. 44, 315 (1989)] is necessary for evaluating the energy-loss rates in quantum wells of wider well width, because Huang-Zhu's original analytical formulas an only approximately orthogonal for optical phonons associated with small in-plane wave numbers. [S0163-1829(99)08919-5].

基于"VASE"特征词的网络查询分类研究

网络查询分类对提高搜索引擎的搜索质量有重要的意义。本文通过真实用户查询日志的分析和标 注，发现四种特征词(称之为“VASE”特征词)对查询分类起决定性作用。我们提取特征词并构造了一个 特征词倒排索引，用于对查询进行主题分类。在此基础之上，提出了基于网络扩展和加权特征词的方法改 善分类的效果。实验结果显示，基于此分类方法的正确率和召回率分别达到78．2％和77．3％。

云雾山不同草地群落土壤活性有机碳分布特征

为探讨黄土高原草地植被演替过程活性有机碳的变化规律,揭示草地退耕后的分布特征,在云雾山草原区采集不同草地群落土壤,采用高锰酸钾氧化法对0~100 cm土层活性有机碳进行分析。结果表明:不同草地群落土壤活性有机碳含量均高于坡耕地,活性有机碳含量大小顺序为:长芒草(Stipa bungeanaTrin.)群落>大针茅(Sti-pa grandisP.Smirn.)群落>铁杆蒿(Artemisia gmeliniiWeb.ex Stechm.)群落>百里香(Thymus mongolicusRonn.)群落>退耕草地>坡耕地,且群落间差异达极显著水平(P<0.01);在恢复初期(坡耕地-退耕草地-百里香)活性有机碳含量增加较多,恢复到长芒草群落活性有机碳含量达到最大值,趋于稳定;活性有机碳的密度与含量表现出相同的变化规律,并随着土层的加深而呈现减小趋势。相关性分析表明,活性有机碳含量与土壤总有机碳含量呈极显著线性正相关关系(r=0.9742),土壤活性有机碳比总有机碳更能反映草地植被恢复初期土壤有机碳库的变化。

陕西省汉台区1978年至2006年耕地数量变化及驱动力分析

汉台区是陕西省农业产业结构调整典型示范区,近年来,由于农业产业结构调整、退耕还林还草和建设占用耕地,汉台区耕地数量大量减少,耕地供需矛盾突出。本文利用1978年以来汉台区耕地长序列统计资料和近9年的土地详查与变更数据,研究汉台区土地利用现状及其结构变化、分析汉台区耕地数量变化的基本过程及空间差异、探讨耕地数量变化的主要驱动力。研究结果表明:①1978年～2006年全区耕地共减少5600hm2,平均每年减少200hm2,人均耕地减少0.027hm2,耕地递减率曲线与人均耕地递减率曲线走势基本一致;②建设占用耕地、退耕还林还草和农业结构调整等直接影响因子在4种类型区影响耕地变化差异明显;总体上,农业产业结构调整是全区耕地减少的主导因素,经济发展较快的城镇,建设占用耕地较多;③耕地面积与社会经济发展各因素间的相关系数约低于累计耕地面积与各因素之间的相关系数,说明全区耕地减少与社会经济发展存在时间上的错位性,即经济和社会发展滞后于对耕地资源的占用。

UHV/CVD法生长硅基低位错密度厚锗外延层

采用超高真空化学气相淀积系统,以高纯Si_2H_6和GeH_4作为生长气源,用低温缓冲层技术在Si（001）衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530″和5.5cm~(-1),具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm~(-2).可用于制备Si基长波长集成光电探测器和Si基高速电子器件.

突破间接带局限创新Si基激光器

Si基高效发光与受激光发射是Si基光子学突破性发展的关键课题,它的实现对Si基微电子学的发展有深远的重大意义.由于受到天然Si材料间接带能带结构的限制,Si材料的发光效率极低,更谈不上可实现受激光发射,人工改性就成为当代研究、开拓的主要途径.新的Si基直接带体材料(如β-FeSi2等)的探索,Ge/Si量子阱、超晶格、量子点的能带工程介观改性,子带发光跃迁的探索,异类元素插入短周期超晶格中的化学键改性,以及SiO2高浓度nc-Si的生成和高激活度稀土离子的掺入发光等已开展了多途径的研究,不同程度上取得了重要的进展,一种MIS结构电子隧道注入高效发光器件已在SiO2:RE MOS结构中实现.运用激光器件物理的深入设计和新的器件技术的引入,可以预计本世纪初叶,对实现Si基激光器的奢望将会成为现实,无疑它对Si基光子学、Si基集成光电子学乃至信息高科技的发展将作出历史性的巨大贡献.

Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices

The paper reports a method of depositing SiO2, SiNx, a:Si, Si3N4 and SiOxNy dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ECR CVD) on InP, InGaAs and other compound semiconductor optoelectronic devices,and give a technology of depositing dielectric thin films and optical coatings by ECR CVD on Laser's Bars. The experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property,optical properties and the other properties. In addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implatation masks in the paper. In the finally, the dielectric film refractive index can be accurately controlled by the N-2/O-2/Ar gas flow rate.