Acute effects of microcystins on the transcription of antioxidant enzyme genes in crucian carp Carassius auratus

Recent evidences suggested that oxidative stress may play a significant role in the pathogenesis of MCs toxicity. In the present study, the acute effects of microcystins on the transcription of antioxidant enzyme genes were investigated in liver of crucian carp i.p.-injected with 50 mu g MC-LReq per kg body weight (BW). We reported the cDNA sequences for four kinds of antioxidant enzyme (GSH-PX, CAT, Cu/Zn SOD, and GR) genes, and evaluated the oxidant stress induced by MCs through analyzing the transcription abundance of antioxidant enzyme genes using real-time PCR method. The time-dependent change of relative transcription abundance and expression of the antioxiclant enzyme genes were determined at 1, 3, 12, 24, and 48 h. The transcription abundance varied among antioxiclant enzymes, with GSH-PX and GR down-regulation, and CAT and SOD significantly upregulation. Based on these data, we tentatively concluded that the oxidant stress was induced by MCs, and caused the different response of the antioxiclant enzyme genes. (c) 2008 Wiley Periodicals, Inc.

Characterization of complete genome sequence of the spring viremia of carp virus isolated from common carp (Cyprinus carpio) in China

The complete genome of spring viraemia of carp virus (SVCV) strain A-1 isolated from cultured common carp (Cyprinus carpio) in China was sequenced and characterized. Reverse transcription-polymerase chain reaction (RT-PCR) derived clones were constructed and the DNA was sequenced. It showed that the entire genome of SVCV A-1 consists of 11,100 nucleotide base pairs, the predicted size of the viral RNA of rhabdoviruses. However, the additional insertions in bp 4633-4676 and bp 4684-4724 of SVCV A-1 were different from the other two published SVCV complete genomes. Five open reading frames (ORFs) of SVCV A-1 were identified and further confirmed by RT-PCR and DNA sequencing of their respective RT-PCR products. The 5 structural proteins encoded by the viral RNA were ordered 3'-N-P-M-G-L-5'. This is the first report of a complete genome sequence of SVCV isolated from cultured carp in China. Phylogenetic analysis indicates that SVCV A-1 is closely related to the members of the genus Vesiculovirus, family Rhabdoviridae.

Development of EST-SSRs by an efficient FIASCO-based strategy: A case study in rare minnow (Gobiocyrpis rarus)

Type I markers are useful for comparative mapping and other genetic analyses, but relatively difficult to develop. In the present study a microsatellite (SSR)-enriched cDNA library was constructed for the first time using the fast isolation by AFLP of sequences containing repeats (FIASCO) method in a small fish, Chinese rare minnow (Gobiocypris rarus). A total of 97.4% of the expressed sequence tags (ESTs) contained targeted CA-repeats, in which 29 unique EST-SSRs were identified. Ten out of the 28 loci for which primer pairs were designed were polymorphic with alleles ranging from three to seven (mean 4.50). Some of these EST-SSRs can be amplified in other species. These results proved that cDNA-FIASCO is an efficient way to isolate novel EST-SSRs in a fish.

Evoked-potential audiogram of the Yangtze finless porpoise Neophocaena phocaenoides asiaeorientalis (L)

Evoked-potential audiograms were obtained in two (one male and one female) Yangtze finless porpoises, Neophocaena phocaenoides asiaseorientalis. Sinusoidal amplitude-modulated 20-ms tone bursts were used as probes with recording envelope-following evoked potentials. A frequency range of 8 to 152 kHz was investigated. The range of greatest sensitivity covered frequencies from 45 to 139 kHz, and the lowest thresholds of 47.2 and 48.5 dB re: 1 μ Pa were found at a frequency of 54 kHz in the two subjects, respectively. At lower frequencies, threshold increased with a rate of around 14 dB/octave, and threshold steeply increased at 152 kHz. © 2005 Acoustical Society of America.

Rearrangeable nonblocking thermo-optic 4 x 4 switching matrix in silicon-on-insulator

A rearrangeable nonblocking thermo-optic 4 x 4 switching matrix is demonstrated. The matrix, which consists of five 2 x 2 multimode interference-based Mach-Zehnder interferometer (MMI-MZI) switch elements, is fabricated in silicon-on-insulator waveguide system. The average excess loss for the optical path experiencing 2 and 3 switch elements is 6.6 and 10.1 dB respectively. The crosstalk in the matrix is measured to be between -12 and -19 dB. The switching time of the device is less than 30 mu s.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN

In our recent report, [Xu , Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n(+) layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n(+) conductivity is not only from the contribution of nitride-site oxygen (O-N), but also from the gallium-site silicon (Si-Ga) donors, with activation energies 2 meV (for O-N) and 42 meV (for Si-Ga), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. Si-Ga and O-N should also be shallow donors and V-Ga-O or V-Ga-Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration N-A=1.8x10(17) cm(-3), the second donor concentration N-D2=1.0x10(18) cm(-3), and the compensation ratio C=N-A/N-D1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. (C) 2001 American Institute of Physics.

Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

A quasi-thermodynamic model of metalorganic vapor phase epitaxy (MOVPE) growth of GaxAlyIn1-x-yN alloys has been proposed. In view of the complex growth behavior of GaxAlyIn1-x-yN, we focus our attention on the galliumrich quaternary alloys that are lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N, which are widely used in the GaN-based optoelectronic devices. The relationship between GaAlInN alloy composition and input molar ratio of group III metalorganic compounds at various growth conditions has been calculated. The influence of growth temperature, nitrogen fraction in the carrier gas, input partial pressure of group III metalorganics, reactor pressure, V/III ratio and the decomposition rate of ammonia on the composition of deposited alloys are studied systematically. Based on these calculated results, we can find out the appropriate growth conditions for the MOVPE growth of GaxAlyIn1-x-yN alloy lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N. (C) 2002 Elsevier Science B.V. All rights reserved.

Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors

Defects and morphologies are presented in this paper as revealed with transmission electron microscope (TEM) in the In(0.8)G(0.2)As/InAlAs heterostructure on InP(001) for high-electron-mobility transistors application. Most of the misfit dislocation lines are 60 degrees type and they deviate < 110 > at some angles to either side according to their Burges vectors. The misfit dislocation lines deviating [-110] are divided into two types according to whether their edge component b(eg) of Burges vectors in [001] pointing up or down. If b(eg) points up in the growth direction, there is the local periodical strain modulation along the dislocation line. In addition, the periodical modulation in height along [-110] on the In(0.8)G(0.2)As surface is observed, this surface morphology is not associated with the relaxation of mismatch strain.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.