A Pressure-Correction Method And Its Applications On An Unstructured Chimera Grid

In this paper, an unstructured Chimera mesh method is used to compute incompressible flow around a rotating body. To implement the pressure correction algorithm on unstructured overlapping sub-grids, a novel interpolation scheme for pressure correction is proposed. This indirect interpolation scheme can ensure a tight coupling of pressure between sub-domains. A moving-mesh finite volume approach is used to treat the rotating sub-domain and the governing equations are formulated in an inertial reference frame. Since the mesh that surrounds the rotating body undergoes only solid body rotation and the background mesh remains stationary, no mesh deformation is encountered in the computation. As a benefit from the utilization of an inertial frame, tensorial transformation for velocity is not needed. Three numerical simulations are successfully performed. They include flow over a fixed circular cylinder, flow over a rotating circular cylinder and flow over a rotating elliptic cylinder. These numerical examples demonstrate the capability of the current scheme in handling moving boundaries. The numerical results are in good agreement with experimental and computational data in literature. (C) 2007 Elsevier Ltd. All rights reserved.

A new model for the floating potential of fine particles in plasma

In the plasma processing of ultrafine particles of material, the heat transfer and force are considerably affected by particle charging. In this communication a new model, including thermal electron emission and incorporating the effect of electric field near the particle surface, is developed for metallic spherical particles under the condition of a thin plasma sheath. Based on this model, the particle floating potential, and thus the heat transfer and force, can be detemined more accurately and more realistically than previously.

Multistaged acceleration of ions by circularly polarized laser pulse: Monoenergetic ion beam generation

A multiple-staged ion acceleration mechanism in the interaction of a circularly polarized laser pulse with a solid target is studied by one-dimensional particle-in-cell simulation. The ions are accelerated from rest to several MeV monoenergetically at the front surface of the target. After all the plasma ions are accelerated, the acceleration process is repeated on the resulting monoenergetic ions. Under suitable conditions multiple repetitions can be realized and a high-energy quasi-monoenergetic ion beam can be obtained.

Defect analysis in Czochralski-grown Yb : FAP crystal

Growth-induced defects in Yb:FAP crystals grown by the Czochralski method have been investigated by optical microscopy, chemical etching, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS). Anisotropic etching features have been observed on two FAP crystal planes: (0001) and (1010). The shape of etch pits on the (0001) plane is hexagonal, while the etch pits on the (1010) plane have a variety of irregular shapes. It is also found that the density of etch pit varies along the boule. Based on the experimental observations, the formation mechanisnis of growth defects are discussed, and methods for reducing the growth-induced defect concentration is proposed. (c) 2005 Elsevier B.V. All rights reserved.

Stress, absorptance and laser-induced damage threshold properties of 355-nm HR coatings

A number of 355-nm Al2O3/MgF2 high-reflectance (HR) coatings were prepared by electron-beam evaporation. The influences of the number of coating layers and deposition temperature on the 355-nm Al2O3/MgF2 HR coatings were investigated. The stress was measured by viewing the substrate deformation before and after coating deposition using an optical interferometer. The laser-induced damage threshold (LIDT) of the samples was measured by a 355-nm Nd:YAG laser with a pulse width of 8 ns. Transmittance and reflectance of the samples were measured by a Lambda 900 spectrometer. It was found that absorptance was the main reason to result in a low LIDT of 355-nm Al2O3/MgF2 HR coatings. The stress in Al2O3/MgF2 HR coatings played an unimportant role in the LIDT, although MgF2 is known to have high tensile stress.

光系统II反应中心D1/D2/Cyt b559复合物的光谱特性及其光破坏作用的研究

采用柱层析法从菠菜叶绿体中分离纯化得到高等植物光系统Ⅱ(PSⅡ)反应中心色素蛋白复合体Dl/D2/Cyt b559，并对其性质，特别是光破坏作用的分子机理进行了研究。主要结果如下： 1、PSⅡ反应中心复合物所含的色素比大约为Chla／2 Pheo a=6.0。其四阶导数光谱在红区有两个峰，表明该反应中心至少存在两种结合状态的Chla。 2、Dl/D2/Cyt b559复合物的荧光相对产率及发射光谱的谱带位置与样品的浓度直接相关。只有当样品的浓度达到足够稀的程度(Chla和Pheo a总浓度小于1μg／ml)，才能得到较真实的荧光光谱，其峰位在681nm处。 3、Dl/D2/Cyt b559复合物的CD光谱在红区（Qy带）有一对反向谱带，正蜂为680nm,负峰为660nm，而在β-胡萝卜素的吸收区没有明显的CD信号。当该反应中心复合物受光破坏后，CD信号明显下降，而且当正峰完全消失后，负峰仍然存在，说明负峰不仅包含P680 的信号，也包含其它色素分子的信号，很可能有部分来源于Pheo a。 4、Dl/D2/Cyt b559复合物在488nm处激发的共振拉曼光谱显示四个主要谱带，其峰位分别在1532(ν1)、1165(ν2)、1010(ν3)和970cm-1（ν4）处，表明PSⅡ反应中心结合的B-胡萝卜素分子是全反式构型。Dl/D2/Cyt b559复合物的色素抽提液的拉曼光谱也显示四个主要的拉曼峰，其中ν4谱带的强度急剧下降，说明PSⅡ反应中心内部结合的β-胡萝卜素分子与抽提液中自由的β-胡萝卜素分子的构象不同，而与光合细菌反应中心内部的类胡萝卜素分子的构象相似，其共轭多烯链的平面也处于扭曲状态。 5、光照使PSⅡ反应中心的原初电子供体P680受到破坏，在光照后的暗放置过程中P680分子继续受到破坏，表明在光照过程中很可能有一个相对稳定的反应中间体产生，以至于光照后暗放置过程中Dl/D2/Cyt b559复合物的光谱特性继续发生变化。也就是说，PSⅡ反应中心Dl/D2/Cyt b559复合物的光破坏不是一步反应，而是一个多步反应或多条途径。 6、光照使Dl/D2/Cyt b559复合物中的组氨酸(His)残基受到很大程度的破坏，甲硫氨酸(Met）残基的含量也略有下降，而其它氨基酸的含量基本保持不变。His残基的破坏很可能与光照后暗放置过程中Dl/D2/Cyt b559复合物的光谱特性变化相关。我们认为His残基的光照破坏很可能是Dl/D2/Cyt b559复合物受光照破坏的另一分子机理。 7、人工电子受体癸基质体醌(DPQ)可以与Dl/D2/Cyt b559复合物进行重组。Dl/D2/Cyt b559复合物的荧光衰减分析表明，在DPQ重组之后，两个长寿命荧光组分（24ns和73ns）的寿命减小，而且占整个荧光的分数也下降，表明这两个长寿命荧光衰减组分均来源于电荷重组过程。同时，β-胡萝卜素分子在DPQ重组之后更易于被光照破坏，这个过程可能与β-胡萝卜素分子的生理功能相关。 8、在没有外加人工电子受体的情况下，光照使DDl/D2/Cyt b559 复合物的多肽组成发生一定变化。SDS-PAGE图谱中出现一个约40KDa的新谱带，同时Dl与D2多肽的表观分子量增加，谱带染色强度下降。 9、本文根据以上实验结果，着重对Dl/D2/Cyt b559复合物光破坏的分子机理进行了分析和讨论，并在D1蛋白裂解的两种可能途经中又增加了一个新的可能导致Dl蛋白裂解的途径，即：His残基的光照破坏可以作为Dl/D2/Cyt b559复合物光破坏及Dl蛋白裂解的又一分子机理，这为深入研究PSⅡ反应中心的光破坏提供了新的线索，也为今后研究活体内光抑制现象的分子机制打下了良好的基础

云南大山包越冬黑颈鹤迁徙路线的卫星跟踪

2005年2月26日和3月1日在云南省昭通大山包黑颈鹤国家级自然保护区,分别为4只越冬黑颈鹤佩戴卫星信号发射器(PTTs),跟踪研究其迁徙路线和迁徙停歇地.2005年春季迁徙中,有2只跟踪黑颈鹤到达繁殖地,其中1只黑颈鹤在2005年11月和2006年3月分别完成从繁殖地返回越冬地和从越冬地再次到达繁殖地的迁徙过程.2只春季迁徙黑颈鹤的迁徙路线大致相同--沿着长江上游金沙江、大渡河一直向北到达黄河上游白河及黑河沿岸若尔盖湿地内.春季迁徙过程中,途中停歇3-4次,总迁徙距离是674-713 km,迁徙全程所用时间3-4天.秋季迁徙全程所用时间8天.在4个PTTs工作期间,共确定有13个黑颈鹤迁徙停歇地,其中11个停歇地在河流滩地;其他2个停歇地在高山湖泊附近.总体上,黑颈鹤一般选择海拔在1 900 m以上湖泊、河流等湿地内,距离耕地较近且人、畜干扰较少的栖息地停歇.

Janibacter sp.对活性污泥反应器中二苯并呋喃降解的强化作用及其遗传学分析

二苯并呋喃(DF)是研究二英类化合物生物降解的模式化合物之一。本文报道了一种降解菌Janibacter sp.对活性污泥降解二苯并呋喃的强化作用,以及对其降解基因的分析结果。向反应器中添加5%的降解菌,与活性污泥共同作用,可在48h内将约56mg/L剂量的DF几乎完全降解,提高降解率28%以上。利用PCR方法,克隆和测序分析证明有DF降解基因丛的存在,并且发现以丰富培养基在高温下培养可去除该基因丛;丢失该基因丛的突变株同时失去利用DF作为唯一碳源进行生长的能力,显示其很可能位于一个大质粒上。

Waterborne exposure to PFOS causes disruption of the hypothalamus-pituitary-thyroid axis in zebrafish larvae

Thyroid hormones (THs) play an important role in the normal development and physiological functions in fish. Environmental chemicals may adversely affect thyroid function by disturbing gene transcription. Perfluorooctane sulfonate (PFOS), a persistent compound, is widely distributed in the aquatic environment and wildlife. In the present study, we investigated whether PFOS could disrupt the hypothalamic-pituitary-thyroid (HPT) axis. Zebrafish embryos were exposed to various concentrations of PFOS (0, 100, 200 and 400 mu g L-1) and gene expression patterns were examined 15 d post-fertilization. The expression of several genes in the HIPT system, i.e., corticotropin-releasing factor (CRF), thyroid-stimulating hormone (TSH), sodium/iodide symporter (NIS), thyroglobulin (TG), thyroid peroxidase (TPO), transthyretin (TTR), ioclothyronine deiodinases (Dio1 and Dio2) and thyroid receptor (TR alpha and TR beta), was quantitatively measured using real-time PCR. The gene expression levels of CRF and TSH were significantly up-regulated and down-regulated, respectively, upon exposure to 200 and 400 mu g L-1 PFOS. A significant increase in NIS and Diol gene expression was observed at 200 mu g L-1 PFOS exposure, while TG gene expression was down-regulated at 200 and 400 mu g L-1 PFOS exposure. TTR gene expression was down-regulated in a concentration-dependent manner. Up-regulation and down-regulation of TR alpha and TR beta gene expression, respectively, was observed upon exposure to PFOS. The whole body thyroxine (T-4) content remained unchanged, whereas triiodothyronine (T-3) levels were significantly increased, which could directly reflect disrupted thyroid hormone status after PFOS exposure. The overall results indicated that PFOS exposure could alter gene expression in the HPT axis and that mechanisms of disruption of thyroid status by PFOS could occur at several steps in the synthesis, regulation, and action of thyroid hormones. (C) 2009 Elsevier Ltd. All rights reserved.

Expression pattern, cellular localization and promoter activity analysis of ovarian aromatase (Cyp19a1a) in protogynous hermaphrodite red-spotted grouper

Aromatase plays a key role in sex differentiation of gonads. In this study, we cloned the full-length cDNA of ovarian aromatase from protogynous hermaphrodite red-spotted grouper (Epinephelus akaara), and prepared the corresponding anti-EaCyp19a1a antiserum. Western blot and immunofluorescence studies revealed ovary-specific expression pattern of EaCyp19a1a in adults and its dynamic expression change during artificial sex reversal. EaCyp19a1a was expressed by follicular cells of follicular layer around oocytes because strong EaCyp19a1a immunofluorescence was observed in the cells of ovaries. During artificial sex reversal, EaCyp19a1a expression dropped significantly from female to male, and almost no any positive EaCyp19a1a signal was observed in testicular tissues. Then, we cloned and sequenced a total of 1967 bp T-flanking sequence of EaCyp19a1a promoter, and showed a number of potential binding sites for some transcriptional factors, such as SOX5, GATA gene family, CREB, AP1, FOXL1, C/EBP, ARE and SF-1. Moreover, we prepared a series of 5' deletion promoter constructs and performed in vitro luciferase assays of EaCyp19a1a promoter activities. The data indicated that the CREB regulation region from -1010 to -898 might be a major cis-acting element to EaCyp19a1a promoter, whereas the elements GATA and SOX5 in the region from -1216 to -1010 might be suppression elements. Significantly, we found a common conserved sequence region in the fish ovary-type aromatase promoters with identities from 93% to 34%. And, the motifs of TATA box, SF-1, SOX5, and CREB existed in the region and were conserved among the most of fish species. (C) 2009 Elsevier Ireland Ltd. All rights reserved.

Comparison of the properties of GaN grown on complex Si-based structures

With the aim of investigating the possible integration of optoelectronic devices, epitaxial GaN layers have been grown on Si(Ill) semiconductor-on-insulator (SOI) and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a highly oriented wurtzite structure, a uniform thickness, and abrupt interfaces. The epitaxial orientation is determined as GaN(0001)//Si(111), GaN[1120]//Si[110], and GaN[1010]//Si[112], and the GaN layer is tensilely strained in the direction parallel to the interface. According to Rutherford backscattering/channeling spectrometry and (0002) rocking curves, the crystalline quality of GaN on Si(111) SOI is better than that of GaN on silicide. Room-temperature photoluminescence of GaN/SOI reveals a strong near-band-edge emission at 368 nm (3.37 eV) with a full width at half-maximum of 59 meV. (c) 2005 American Institute of Physics.

High-precision determination of lattice constants and structural characterization of InN thin films

X-ray diffraction and Rutherford backscattering/channeling were used to characterize the crystalline quality of an InN layer grown on Al2O3(0001) Using metal-organic chemical-vapor deposition. A full width at half maximum of 0.27 degrees from an InN(0002) omega scan and a minimum yield of 23% from channeling measurements show that this 480-nm-thick InN layer grown at low temperature (450 degrees C) has a relatively good crystalline quality. High-resolution x-ray diffraction indicates that the InN layer contains a small fraction of cubic InN, besides the predominant hexagonal phase. From this InN sample, the lattice constants a=0.353 76 nm and c=0.570 64 nm for the hexagonal InN and a=0.4986 nm for the cubic InN were determined independently. 2 theta/omega-chi mapping and a pole figure measurement revealed that the crystallographic relationship among the cubic InN, the hexagonal InN, and the substrate is: InN[111]parallel to InN[0001]parallel to Al2O3[0001] and InN{110}parallel to InN{1120}parallel to Al2O3{1010}, and that the cubic InN is twinned. Photoluminescence measurements indicate that the band-gap energy of this sample is approximately 0.82 eV. (c) 2006 American Vacuum Society.

Modulation spectroscopy of GaAs covered by InAs quantum dots

Contactless: electroreflectance has been employed at room temperature to study the Fermi level pinning at undoped-n(+) GaAs surfaces covered by 1.6 and 1.8 monolayer (ML) InAs quantum dots (QDs). It is shown that the 1.8 ML InAs QD moves the Fermi level at GaAs surface to the valence band maximum by about 70 meV compared to bare GaAs, whereas 1.6 ML InAs on GaAs does not modify the Fermi level, It is confirmed that the modification of the 1.8 ML InAs deposition on the Fermi level at GaAs surface is due to the QDs, which are surrounded by some oxidized InAs facets, rather than the wetting layer.