1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE

1.5 mu m DFB LD butt-joint integrated with vertical tapered spotsize converter was fabricated by LP-MOVPE. The vertical far field angle (FWHM) was decreased from 34degrees to 10degrees the threshold currents was as low as 19.8mA, the output power was 9.6mw at 100mA without HR coating and the SMSR was 35.8dB. The 1-dBm misalignment tolerance was 3.2 mu m, while the counterpart of the device without SSC was 2.2 mu m.

Tunable MQW-DBR lasers using selective area growth

The tunable ridge waveguide distributed Bragg reflector (DBR) lasers designed for wavelength-division-multiplex (WDM) communication systems at 1.55 um by using selective area growth (SAG) is reported. The threshold current of the DBR laser is 62mA and the output power is more than 8mW. The isolation resistance between the active region and the Bragg region is 30K Ohm. The total tuning range is 6.5nm and this DBR laser can provide 6 continuous standard WDM channels with 100GHz channel spacing; in the tuning range, the single mode suppression ratio (SMSR) is maintained more than 32dB and the maximum output power variation is less than 3dB.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser

The effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. The optimum conditions for stable oxidation were obtained. Two mechanisms of the oxidation process are revealed. One is the flow-controlling process, which is unstable. The other is the temperature-controlling process, which is stable. The stable region decreases for higher reaction temperatures. The simulation results for the stable oxidation region are also given. With optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved.