Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers

At a medium substrate temperature of 400 degrees C and a lower As flux, we have grown an ultrafast AlGaAs/GaAs photorefractive multiple quantum well (MQW) structure by molecular beam epitaxy. The as-grown sample exhibits strong photorefractive effect under the transverse Frantz-Keldysh geometry. A peak electroabsorption of 2100 cm(-1) is measured in the as-grown sample in an 11 kV/cm dc electric field, and the peak photorefractive diffraction efficiency can be 1.2%. After postgrowth annealing, the photorefractive effect becomes weak and disappears in samples annealed above 700 degrees C. Using optical transient current spectroscopy, deep levels are measured in these samples. It is found that deep levels are stable against annealing until 700 degrees C. Using a pump-probe technique, carrier lifetimes are measured at room temperature. We find that the as-grown sample has a lifetime of 20 ps, while the 700 degrees C annealed sample has a lifetime of more than 200 ps. The ultrafast lifetime in the as-grown sample is caused by point defects, not by As clusters. Our result show that AlGaAs/GaAs MQW structure grown around 400 degrees C has better performance of the photorefractive effect. (C) 1999 American Institute of Physics. [S0003-6951(99)04036-X].

One-dimensional modulation instability of broad optical beams in biased photorefractive-photovoltaic crystals under steady-state conditions

We present a comprehensive study of the one-dimensional modulation instability of broad optical beams in biased photo refractive-photovoltaic crystals under steady-state conditions. We obtain the one-dimensional modulation instability growth rate by globally treating the space-charge field and by considering distinction between values of Eo in nonlocal effects and local effects in the space-charge field, where Eo is the field constant correlated with terms in the space-charge field, which depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam's intensity to that of the dark irradiance. The one-dimensional modulation instability growth rate in local effects can be determined from that in nonlocal effects. When the bulk photovoltaic effect is neglectable, irrespective of distinction between values of Eo in nonlocal effects and local effects in the space-charge field, the one-dimensional modulation instability growth rates in nonlocal effects and local effects are those of broad optical beams studied previously in biased photorefractive-nonphotovoltaic crystals. When the external bias field is absent, the one-dimensional modulation instability growth rates in nonlocal effects and local effects predict those of broad optical beams in open- and closed-circuit photorefractive-photovoltaic crystals. (c) 2004 Elsevier B.V. All rights reserved.

Steady-state bright-dark vector spatial solitons in biased photorefractive-photovoltaic crystals

We show that bright-dark vector solitons are possible in biased photorefractive-photovoltaic crystals under steady-state conditions, which result from both the bulk photovoltaic effect and the spatially nonuniform screening of the external bias field. The analytical solutions of these vector solitons can be obtained in the case of \sigma\ much less than 1, where sigma is the parameter controlling the intensities of the two optical beams. In the limit of -1 < sigma much less than 1, these vector solitons can also be determined by use of simple numerical integration procedures. When the bulk photovoltaic effect is neglectable, these vector solitons are bright-dark vector screening solitons studied previously in the \sigma\ much less than 1 regime, and predict bright-dark vector screening solitons in the -1 < sigma less than or equal to 1 regime. When the external bias field is absent, these vector solitons predict bright-dark vector photovoltaic solitons in closed and open circuits. (C) 2002 Elsevier Science B.V. All rights reserved.

Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals when the external bias field is absent.

Soliton-induced waveguides in photorefractive photovoltaic materials

Waveguides induced by one-dimensional spatial photovoltaic solitons are investigated in both self-defocusing-type and self-focusing-type photorefractive photovoltaic materials. The number of possible guided modes in a waveguide induced by a bright photovoltaic soliton is obtained using numerical techniques. This number of guided modes increases monotonically with increasing intensity ratio, which is the ratio between the peak intensity of the soliton and the sum of the background illumination and the dark irradiance. On the other hand, waveguides induced by dark photovoltaic solitons are always single mode for all intensity ratios, and the higher the intensity ratio, the more confined is the optical energy near the centre of the dark photovoltaic soliton. Relevant examples are provided where photorefractive photovoltaic materials are of self-defocusing and self-focusing types. The properties of soliton-induced waveguides in both self-defocusing-type and self-focusing-type materials are also discussed.

Waveguides induced by screening-photovoltaic solitons in biased photorefractive-photovoltaic crystals

We investigate theoretically waveguides induced by screening-photovoltaic solitons in biased photorefractive-photovoltaic crystals. We show that the number of guided modes in a waveguide induced by a bright screening-photovoltaic soliton increases monotonically with the increasing intensity ratio of the soliton, which is the ratio between the peak intensity of the soliton and the dark irradiance. On the other hand, waveguides induced by dark screening-photovoltaic solitons are always single mode for all intensity ratios and the confined energy near the centre of a dark screening-photovoltaic soliton increases monotonically with the increasing intensity ratio. When the bulk photovoltaic effect is neglectable, these waveguides are those induced by screening solitons. When the external field is absent, these waveguides predict those induced by photovoltaic solitons.