Direct synthesis and intense luminescence of Y2O3 : Eu nanophosphors by complexation combustion

In this paper, we report the synthesis of high-luminance Y2O3:Eu nanocrystal through a citrate-nitrate complexation combustion method at a low temperature of 200-280 degrees C. The as-combusted Y2O3:Eu phosphors are almost equiaxed crystallites with an average size of 30-40 run, and have an intense red luminescence. The present fuel-deficient method suggests that by control of the ratio of citric acid to nitrates, it is valuable for the fabrication of Y2O3 nanoparticles without heat treatment. This process should be applicable to a wide range of nanocrystal oxides.

Sol-gel combustion synthesis and luminescence Of Y4Al2O9 : Eu3+ nanocrystal

Y4Al2O9:EU3+ phosphor was synthesized through a sol-gel combustion method. The Y4Al2O9 phase can form through sintering at 800 degrees C. This temperature is much lower than that required via the solid state reaction method. The average grain size of the phosphor was about 30 run. Compared with the amorphous phosphor, the charge transfer band of crystalline phosphor shows a blue shift. The emission Of Y4Al2O9:Eu3+ indicates the existence of two luminescent centers, in agreement with the crystal structure of Y4Al2O9. Higher doping concentration could be realized in Y4Al2O9 nanocrystal host lattice. This indicates that the sol-gel combustion synthesis method can increase emission intensity and quenching concentration due to a good distribution of EU3+ activators in Y4Al2O9 host. (c) 2005 Elsevier B.V. All rights reserved.

凝胶-燃烧法合成YAG：Eu^3＋纳米荧光材料的结构和发光性能

Y3Al5O12:Eu nanophosphors were synthesized by a gel combustion method. The structure of phosphors was characterized by XRD and FTIR. YAG phase came to occur when YAG:Eu precursors were sintered at 800 ℃, although the phase was mainly amorphous. The organ

Growth of highly sensitive thermoluminescent crystal alpha-Al2O3 : C by the temperature gradient technique

In this work, an alpha-Al2O3:C crystal with highly sensitive thermoluminescence was directly grown by the temperature gradient technique (TGT) using Al2O3 and graphite powders as raw materials. The optical and luminescent properties and the dosimetric characteristics of the crystal were investigated. An as-grown alpha-Al2O3:C crystal shows a single glow peak at 462 K and a blue emission peak at 415 nm. The thermoluminescence (TL) response of the crystal shows a linear-sublinear-saturation characteristic. In the dose range from 5 x 10(-6) to 10Gy, the alpha-Al2O3:C crystal shows excellent linearity, and saturation was observed at about 30Gy. The sensitivity of the crystal decreases as the heating rate increases. (c) 2008 Elsevier B.V. All rights reserved.

New observations on the pressure dependence of luminescence from Eu2+-doped MF2 (M = Ca, Sr, Ba) fluorides

The luminescence from Eu2+ ions in MF2 (M = Ca, Sr, Ba) fluorides has been investigated under the pressure range of 0-8 GPa. The emission band originating from the 4f(6)5d(1) -> 4f(7) transition of Eu2+ ions in CaF2 and SrF2 shows the red-shift as increasing pressure with pressure coefficients of -17 meV/GPa for CaF2 and -18 meV/GPa for SrF2. At atmospheric pressure, the emission spectrum of BaF2:Eu2+ comprises two peaks at 2.20 and 2.75 eV from the impurity trapped exciton (ITE) and the self-trapped exciton (STE), respectively. As the pressure is increased, both emission peaks shift to higher energies, and the shifting rate is slowed by the phase transition from the cubic to orthorhombic phase at 4 GPa. Due to the phase transition at 4-5 GPa pressure, the ITE emission disappears gradually, and the STE emission is gradually replaced by the 4f(6)5d(1) -> 4f(7) transition of Eu2+. Above 5 GPa, the pressure behavior of the 4f(6)5d(1) -> 4f(7) transition of EU2+ in BaF2: EU2+ is the same as the normal emission of Eu2+ in CaF2 and SrF2 phosphors.

Phosphor-conversion white light using InGaN ultraviolet laser diode

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the blue and yellow regions when excited by the n-UV and blue light, respectively.The relationship of the luminous flux and the luminous efficacy of the white light with injection current was discussed. The luminous flux increased linearly with increasing current above the threshold of the laser diode, and at 80 mA injection current, the luminous flux and luminous efficacy were estimated to be 5.7 lm and 13 lm/w, respectively. The shift of the Commission International de I'Eclairage coordinates, color temperature, and color rendering index with current are very slight and negligible, which indicates that the blue and the yellow phosphors have an excellent stability and a highly stable white light can be obtained by this way. (c) 2008 American Institute of Physics.

White light emission from ultraviolet laser diode

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires

We report a new method for large-scale production of GaMnN nanowires, by annealing manganese-gallium oxide nanowires in flowing ammonia at high temperature. Microstructure analysis indicates that the GaMnN nanowires have wurtzite GaN structure without Mn precipitates or Mn-related second phases. Magnetism evolution due to nitrogen doping in manganese-gallium oxide nanowires was evaluated by magnetic measurements. Magnetic measurement reveals that the magnetization increases with the increase of nitrogen concentration. Ferromagnetic ordering exists in the GaMnN nanowires, whose Curie temperature is above room temperature. Luminescence evolution was investigated by the cathodoluminesence measurement for a single nanowire and photoluminescence measurement in a temperature range between 10 and 300 K. Experimental results indicate that optical properties can be modulated by nitrogen doping in manganese-gallium oxide nanowires. (c) 2005 Elsevier B.V. All rights reserved.

Magnetism and photoluminescence in manganese-gallium oxide nanowires with monoclinic and spinel structures

Manganese-gallium oxide nanowires were synthesized via in situ Mn doping during nanowire growth using a vapor phase evaporation method. The microstructure and composition of the products were characterized via transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The field and temperature dependence of the magnetization reveal the obvious hysteresis loop and large magnitude of Curie-Weiss temperature. The photoluminescence of the manganese-gallium oxide nanowires were studied in a temperature range between 10 and 300 K. A broad green emission band was observed which is attributed to the T-4(1)-(6)A(1) transition in Mn2+ (3d(5)) ions. (c) 2005 Elsevier B.V. All rights reserved.

Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film

A novel electroluminescence oxide phosphor (Gd2O3-Ga2O3):Ce has been prepared by electron beam evaporation. The emission peaks of photoluminescence lie at 390nm and a shoulder at 440nm. However, the electroluminescence of the (Gd2O3-Ga2O3):Ce thin film have four emission peaks at 358nm, 390nm, 439nm and 510nm, respectively. The optical absorption of (Gd2O3-Ga2O3):Ce thin film and the photoluminescence of composite materials with various ratios of Ga2O3/(Gd2O3+Ga2O3) have also been described to investigate the origin of emission of photoluminescence and electroluminescence.

Ultraviolet-blue electroluminescence from Gd3Ga5O12 : Ag

UV-blue light was obtained from a thin-film electroluminescence device using Gd3Ga5O12:Ag as a light-emitting layer, which was deposited by using electron-beam evaporation. The crystal composition and structure of Gd3Ga5O12:Ag were studied by x-ray powder diffraction, The Gd3Ga5O12:Ag has a photoluminescence emission which peaked at around 397 and 467 nm, which were attributed to the oxide vacancies and Ag+, respectively. The brightness of 32 cd/m(2) was obtained when an alternating voltage of 130 V at 1 kHz was applied. (C) 2000 American Institute of Physics. [S0003-6951(00)05031-2].

New color centers and photostimulated luminescence of BaFCl : Eu2+

Three new absorption bands, appearing around 670, 865 and 980 nm, are observed in BaFCl:Eu2+ phosphors. They are ascribed to F aggregates formed by association of F centers or by trapping of electrons to the primary F-n(+) (n = 2,3,4) centers. The growth curves of F and F-aggregated centers are similar and may be divided into three stages. The photostimulated luminescence (PSL) decays by stimulation into the absorption bands of F centers and of F aggregates are different; the former decay logarithmically and the latter decay hyperbolically. Some non-radiative processes related to F aggregates, such as electron migration, occur accompanying the PSL process, which may reduce the PSL efficiency and sensitivity of the phosphors. (C) 1997 Published by Elsevier Science Ltd. All rights reserved.

Color filter-less technology of LED back light for LCD-TV - art. no. 68410G

Back Light Unit (BLU) and Color Filter are the two key components for the perfect color display of Liquid Crystal Display (LCD) device. LCD can not light actively itself, so a form of illumination, Back Light Unit is needed for its display. The color filter which consists of RGB primary colors, is used to generate three basic colors for LCD display. Traditional CCFL back light source has several disadvantages, while LED back light technology makes LCD obtain quite higher display quality than the CCFL back light. LCD device based on LED back light owns promoted efficiency of display. Moreover it can generate color gamut above 100% of the NTSC specification. Especially, we put forward an idea of Color Filter-Less technology that we design a film which is patterned of red and green emitting phosphors, then make it be excited by a blue light LED panel we fabricate, for its special emitting mechanism, this film can emit RGB basic color, therefore replace the color filter of LCD device. This frame typically benefits for lighting uniformity and provide pretty high light utilization ratio. Also simplifies back light structure thus cut down the expenses.

场发射(FED)用荧光粉的研制与改性

场发射平板显示器（Field Emission Displays, FED）是一种新发展起来的平板显示器，由于其在亮度、视角、响应时间、工作温度范围、能耗等方面具有优良的特性，成为近年新型显示器研究的热点之一。为实现高效的FED红、绿、蓝全色显示，荧光粉在其中起着十分重要的作用。制备性能优良的场发射用彩色荧光粉是决定将来FED技术成功与否的关键因素之一。 本论文研究的内容包括场发射(FED)用荧光粉的研制和改性工作。在场发射(FED)用荧光粉研制方面，采用溶胶-凝胶方法，制备了一系列新型场发射(FED)用荧光粉，包括稀土离子激活的镓酸镧 [(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm)]体系、铟酸钙[(CaIn2O4: Re3+ (Re = Eu, Pr, Tb, Dy,)]体系、铟酸锶[(SrIn2O4: Re3+ (Re = Pr, Tb, Dy)]体系、镓酸镥[Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)]体系，并研究了Pr, Sm, Eu, Tb, Dy, Tm等稀土离子在这些基质中的光致发光、低压阴极射线发光性质和能量传递等性质。在荧光粉的改性方面，采用喷雾热解法制备了Sr2CeO4球形场发射用荧光粉，研究了喷雾前驱体溶液中，聚乙二醇浓度、金属离子浓度、烧结温度对形貌及发光性能的影响；采用溶胶－凝胶方法成功将SiO2表明包覆一层CaTiO3:Pr3+, Y3Al5O12:Ce3+/Tb3+荧光粉，得到单分散，球形形貌，分布均匀，具有核/壳结构的球形荧光粉；另外研究了不同的制备方法对Ga2O3:Dy3+荧光粉的发光性能的影响。所得样品用XRD、FTIR、SEM、TEM、漫反射光谱、光致发光(PL)光谱、荧光寿命曲线、低压阴极射线(CL)光谱等进行表征。 在紫外光激发下，稀土离子激活的镓酸镧彩色荧光粉有基质(LaGaO3)的发射和稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射，研究表明在基质和稀土离子之间存在能量传递，其能量传递效率因离子而异。在阴极射线激发下，样品仅有稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射。如：LaGaO3: Eu3+发红光，LaGaO3: Dy3+发白光，LaGaO3: Tm3+发蓝光，LaGaO3: Sm3+发黄光，LaGaO3: Sm3+,Tb3+发白光。LaGaO3: Tb3+的发光颜色可通过不同Tb3+的掺杂浓度从蓝光到绿光进行调控。在相同的激发条件下，所制备的蓝光发射的LaGaO3: Tb3+和LaGaO3: Tm3+荧光粉与商业FED用蓝粉(Y2SiO5: Ce3+，日亚化学工业株式会社，NP-1047)相比具有更好的色纯度和更高的发光效率；所制备的黄光发射的LaGaO3: Sm3+荧光粉与商业低压黄色荧光粉((Zn,Cd)S: Ag，日亚化学工业株式会社，NP-1020)相比，色纯度接近，但具有更高的发光效率。并首次实现了单一基质中白光发射(LaGaO3: Sm3+,Tb3+), 所制备的稀土离子激活的镓酸镧彩色荧光粉[(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm )]在场发射器件有潜在的应用。 在稀土离子掺杂的Sr/CaIn2O4荧光粉体系中，在基质Sr/CaIn2O4和掺杂离子Pr3+/Tb3+/Dy3+存在高效能量传递。基质Sr/CaIn2O4吸收能量向激活离子Pr3+/ Tb3+/Dy3+传递，发射为稀土离子Pr3+/Tb3+/Dy3+的特征发射，发光强度、荧光寿命等符合应用要求，在低压电子束激发下，Sr/CaIn2O4: Pr3+/Tb3+/Dy3+荧光粉为稀土离子的特征发射，其低压阴极射线发光(CL)光谱与光致发光(PL)发射光谱一致，CL强度随激发电压，电流密度增加而增强。 对于CaIn2O4:Eu3+荧光粉，进一步研究表明CaIn2O4:Eu3+荧光粉的光致发光和阴极射线发光颜色可以通过掺杂不同浓度的Eu3+从白光，黄光，到红光进行调控。低浓度掺杂发白光，高浓度掺杂发红光，适当的浓度发黄光。 在Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)荧光粉体系中，在紫外（UV）和低压阴极射线激发下，所制备的荧光粉Lu3Ga5O12: Eu3+, Lu3Ga5O12: Pr3+为稀土离子Eu3+, Pr3+的特征发射，分别发黄光和绿光。Lu3Ga5O12:Tb3+的发光颜色因Tb3+掺杂浓度不同而不同，低浓度掺杂发蓝光，高浓度发绿光。 Sr2CeO4荧光粉在UV及低压阴极射线激发下发出强烈蓝光，源于配体到金属离子电荷迁移带跃迁(Ce4+-O2-)。其阴极射线发光强度与电压及灯丝电流呈良好的线性关系。 采用溶胶－凝胶方法的核壳结构的SiO2@CaTiO3:Pr3+和SiO2@Y3Al5O12: Ce3+/Tb3+荧光粉, FESEM和TEM结果表明这种核壳结构的发光材料表面致密，厚度均匀，保持了单分散SiO2微球的形貌特征。在UV及低压阴极射线激发下，SiO2@CaTiO3:Pr3+呈强红色发射，源于Pr3+ 的1D2—3H4 (612 nm)跃迁；SiO2@Y3Al5O12:Ce3+和SiO2@Y3Al5O12:Tb3+ 分别发黄绿光和绿光，源于Ce3+的5d-4f和Tb3+的5D4-7FJ (J = 6, 5, 4, 3)跃迁。PL强度可以通过包覆次数调控，CL强度随激发电压及灯丝电流增加而增强。 在Ga2O3:Dy3+荧光粉体系中，采用了溶胶-凝胶，氨水共沉淀，和高温固相法制备了Ga2O3:Dy3+荧光粉并比较了他们的结晶行为，形貌，光致发光和低压阴极射线发光性能。溶胶-凝胶法制备由于原料在分子层次上混合，可以得到纯相，氨水共沉淀和高温固相法原料不如溶胶凝胶法混合均匀，很难得到纯相。溶胶-凝胶和氨水共沉淀所得荧光粉为纳米级别大小，分别呈球形和玉米棒形状；高温固相法微米级别且呈不规则形状。Ga2O3向Dy3+传递能量效率依次按溶胶-凝胶，氨水共沉淀，和高温固相法逐渐降低。在紫外光激发下，分别发白光，蓝白光，蓝光。其低压阴极射线发光与光致发光类似。相比之下，溶胶-凝胶法制备Ga2O3:Dy3+荧光粉比氨水共沉淀和高温固相法制备要好。

等离子体平板显示（PDP）用荧光粉的合成及其光谱性质

等离子体平板显示（PDP）是目前高清晰度、大屏幕平板显示中的佼佼者，使挂壁彩电成为现实，但其关键部分之一-PDP荧光粉的发展却存在着相当滞后的问题，因此急需开发出性能更好的PDP荧光粉或对现有荧光粉的性能进行改善。改善PDP荧光粉性能的重要手段之一是选择合适的合成路径，因此本文探索了软化学合成方法-水热法在合成 PDP荧光粉合成中的应用，同时也采用高温固相法、共沉淀法对PDP荧光粉进行了合成，通过对比分析探索合成方法对PDP荧光粉光谱性质的影响。分别采用水热法、高温固相法、共沉淀法对掺杂稀土发光离子的稀土正硼酸盐（Y，Gd）BO_3、正磷酸盐（La，Gd）PO4、矾酸盐（Y，Gd）VO4、矾磷酸盐Y（P，V）O_4和硼硅酸盐LoBSIOS进行了合成，并用XRD、IR、SEM、XPS、TG-DTA等手段对其结构进行了表征，对上述PDP荧光粉的真空紫外（VUV）光谱、紫外可见光谱及发射光谱性质进行了研究，得到了一些新的、有意义的结果。（1）首次采用水热法以稀土氧化物、氢氧化物或硝酸盐与硼酸为原料合成了（Y,Gd）BO_3：RE~(3+)（RE＝Eu，Th）系列荧光粉，并对其VUV光谱特性进行了研究。sEM分析发现水热法以氢氧化物、硝酸盐合成的荧光粉粒度在100-200nm之间。XPS揭示不同基质中带结构具有一定的差异。光谱分析发现（Y,Gd）BO_3：RE~(3+)的VUV光谱中110-175nm范围内存在着基质硼酸根（B3场）的吸收带，该吸收带随基质中G矛"浓度的增大而增强并发生了红移，认为红移是由于基质中B-O反键轨道能量的变化引起的。对能量传递过程进行分析认为G矛十起到能量传递中间体的作用，使基质对激活剂的敏化效率随G矛十浓度的增大而提高。（Y,Gd）BO3:RE3＋中基质敏化效率的提高也可能是由于基质敏化带的红移使Gd3十或RE3＋更容易从基质中获得能量。我们认为作为PDP荧光粉Eu3＋或Th3＋在GdB03基质中的发光性能更好。对水热合成的（Y,Gd）BO3：Eu~(3+)荧光粉进行热处理发现，荧光粉的亮度随热处理温度的提高而明显增强，说明一定温度下热处理有利于提高荧光粉的发光性能，这可能是由于热处理后荧光粉的结晶度提高，内部缺陷减少。比较水热法、高温固相法和共沉淀法对荧光粉性质的影响时发现三种方法制备的荧光粉光谱特性基本一致，但高温固相法和共沉淀法制备的荧光粉粒度较大，形貌不规则。（2）采用水热法制备了不同G矛十浓度的PDP荧光粉（L a，Gd）Po4：RE3＋（RE＝Eu，Tb），发现以稀土硝酸盐溶液和伽玩）2HPO4为原料，在pH值为5·240oC下反应3天可以合成出结晶度较高的纯相。从SEM照片中观察到水热法制备的荧光粉为晶化很好的棒状晶体。对水热法制备的LaP04：Eu3+和GdPO4：Eu3+进行热处理后发现热处理后晶体的尺寸变小，但形貌没有发生明显的变化，发光性能效果稍有提高。首次对共沉淀法合成的不同Gd3＋浓度的（La，Gd）PO4：KE3＋（RE=Eu，Tb）荧光粉的VUV光谱进行了分析，并研究了Gd3＋在能量传递过程中的作用，发现随基质中Gd3十浓度的增大，基质对发光离子的敏化效率提高，认为Gd3＋起着能量传递中间体的作用。同时观察到（La，Gd）PO4：Eu3+中电荷迁移带随着Gd3＋浓度的增大而发生红移，这也可能会导致基质对Eu3+敏化效率的提高。首次利于xPs分析了LaPO4和GdP04的价带结构，发现LaP04的价带由O2的2P能级构成，而GdPo4的价带则是由O2-的2p能级和Gd3＋的4f能级共同构成，这种价带结构的差异可能对（La，Gd）PO4：RE3＋在VUV区的吸收产生影响。（3）首次对水热法合成的（Y,Gd）VO4：Eu3+的VUV光谱进行了研究，观察到120-170nm范围内存在着vO43一离子团的弱吸收带，200nm处存在着来自2P（O）→4f（Y）或5d（均跃迁的激发带，20onm以后的激发宽带是由Eu3＋的电荷迁移带与VO43-的吸收带重叠而成的。对不同Gd3＋浓度的（Y，Gd）VO4：E矿"的vLJ'v光谱进行研究发现，在一定G矛＋浓度范围内Gd3＋的加入使基质vo43+对Eu3+的敏化效率提高。对（Y,Gd）VO4：Eu3+中的能量传递过程进行分析认为，（Y,Gd）vo4：Eus＋中可能存在着VO_4~(3-)→Eu~(3+)和VO_4~(3-)（vuv）→Gd~(3+)→VO_4~(3-)（UV）→Eu~(3+)等几种能量传递方式，Gd3＋起着能量传递中间体的作用。（4）首次采用水热法合成了Y（P，v）O4：Eu3"红色荧光粉，发现初始体系pH为12.5、在240℃下反应6天可以得到Y（P，V）o4：Eu3＋纯相。结合XRD和SEM分析发现Y（P，V）O4：Eu3＋荧光粉的粒径随VO3-4浓度的增大而增大，YPO4：Eu3+的粒径为100-150nm，而YVO4：Eu3+的粒径则为400-450nm。对水热法合成的Y（P， V）O4:Eu3+的VUV光谱进行研究发现基质对Eu3+的敏化效率随VO3-4户含量的增多而提高。通过比较发射光谱中~5D_0→~7F_2与~5D_0→~7F_1跃迁的强度发现二者强度之比随VO_4~(3-_浓度的增大而增大，说明荧光粉的色纯度随VO4含量的增多而更好。比较水热法和高温固相法合成的Y（P，V）O4：Eus"的VUV光谱发现水热法制备的荧光粉在真空紫外区的吸收较弱，说明水热法制备的荧光粉虽然粒度较小，形貌规则，但发光性能不如高温固相法制备的Y（P,V）O4：Eu3＋荧光粉。（5）分别采用水热法和高温固相法制备了单掺稀土发光离子的LaBSIOS，并对它们的光谱性质进行了研究。通过比较产物的SEM照片发现水热法可以制备出粒度为2-3μm，形状近似于球形的产物，而高温固相法制备的样品形貌不规则，粒度分布范围广。对水热法制备的LaBSiO_5：Eu~(3+)进行红外光谱分析发现1300-400cm~(-1)范围内为BO_4基团和SiO_4基团的振动峰。首次对高温固相法制备的LaBSiO_5:Re~(3+)（RE=Eu，Sm，Th）的vuv光谱性质进行了分析，认为其VUV光谱中125-200nm范围内存在着BO_4基团的吸收带（125-165nm）和SiO4四面体的吸收带（165-183nm）。比较两种方法制备的荧光粉的光谱性质和亮度发现两种方法制备的荧光粉光谱性质基本一致，而水热法制备的LaBSiO_5：RE~(3+)（RE＝Eu，Sm，Tb）在254nm紫外光激发下亮度相对较低。