Broadband optical amplification in silicate glass-ceramic containing beta-Ga2O3 : Ni2+ nanocrystals

We demonstrate broadband optical amplification at 1.3 mu m in silicate glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals with 980 nm excitation for the first time. The optical gain efficiency is calculated to be about 0.283 cm(-1) when the excitation power is 1.12 W. The optical gain shows similar wavelength dependence to luminescence properties. (C) 2007 Optical Society of America.

Comparative investigation of up-conversion luminescence in Tm3+/Yb3+-codoped germanate-niobic and germanium-bismuth glasses: effect of phonon density on up-conversion emission

Tm3+/Yb3+-codoped gernianate-niobic (GN) and germanium-bismuth (GB) glasses have been synthesized by conventional ruching and quenching method. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4)->H-3(6) and (1)G(4)->H-3(4), respectively, were observed at room temperature. The possible Up-conversion mechanisms are discussed and estimated. GN glass showed a weaker up-conversion emission than GB glass, which is inconsistent with the prediction from the difference of maximum phonon energy between GN and GB glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. For the first time, our results reveal that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency. (c) 2005 Elsevier Ltd. All rights reserved.

Comparative investigation of up-conversion luminescence in Tm3+-doped oxide-chloride germanate and tellurite glasses

Tm3+-doped oxide-chloride germanate and tellurite glasses have been synthesized by conventional melting method. Intense up-conversion luminescence emissions were simultaneously observed at room temperature in these glasses. The possible up-conversion mechanisms are discussed and estimated. However, in these Tm3+-doped glasses, tellurite glass showed weaker up-conversion emissions than germanate glass, which is inconsistent with the prediction from the difference of maximum phonon energy between tellurite and germanate glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Our results confirm that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency. (c) 2005 Elsevier Ltd. All rights reserved.

Up-conversion luminescence analysis in ytterbium-sensitized erbium-doped oxide-halide tellurite and germanate-niobic-lead glasses

Ytterbium-sensitized erbium-doped oxide-halide tellurite and germanate-niobic-lead glasses have been synthesized by conventional melting method. Intense green and red emissions centered at 525, 546 and 657 nm, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2) and F-4(9/2) -> I-4(15/2), respectively, were simultaneously observed at room temperature in these glasses. The quadratic dependence of the 525, 546 and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs. Tellurite glass showed a weaker up-conversion emission than germanate-niobic-lead glass, which is inconsistent with the prediction from the difference of maximum phonon energy between tellurite and germanate-mobic-lead glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. Our results reveal that the phonon density and the maximum phonon energy of host glasses are both important factors in determining the up-conversion efficiency. (c) 2005 Elsevier B.V. All rights reserved.

Growth, characterization and optical quality of CaF2 single crystals grown by the temperature gradient technique

The CaF2 single crystals with diameters up to 200 mm were successfully grown by modified temperature gradient technique (TGT), which are suitable for application as optical elements in the ultraviolet range. The optimizations of various growth parameters were systematically studied. Properties of as-grown CaF2 crystals were characterized by the nature of inclusions, dislocations, crystallinity, and impurities contents. The results showed that the dislocations and multinucleation were mostly constrained in the conical part of the crystals with the cylindrical parts having the best crystalline quality and lowest impurity contents. The high optical quality of TGT-grown CaF2 single crystals was also confirmed to have excellent optical transmission in 190-2500 nm and refractive index homogeneity. (c) 2005 Elsevier Ltd. All rights reserved.

Numerical analysis for four-wave mixing based wavelength conversion of differential phase-shift keying signals

We numerically investigate the main constrains for high efficiency wavelength conversion of differential phase-shift keying (DPSK) signals based on four-wave mixing (FWM) in highly nonlinear fiber (HNLF). Using multi-tone pump phase modulation techniques, high efficiency wavelength conversion of DPSK signals is achieved with the stimulated Brillouin scattering (SBS) effects effectively suppressed. Our analysis shows that there is a compromise between conversion efficiency and converted idler degradation. By optimizing the pump phase modulation configuration, the converted DPSK idler's degradation can be dramatically decreased through balancing SBS suppression and pump phase modulation degradation. Our simulation results also show that these multi-tone pump phase modulation techniques are more appropriate for the future high bit rate systems.

Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD

ZnO films have been fabricated on (0 0 1), (0 1 1) and (1 1 1) SrTiO3 (STO) substrates by metal-organic chemical vapour deposition (MOCVD). It is interesting that the ZnO films on (0 0 1) and (0 1 1) STO substrates show polar and semipolar orientations, which are different from previous reports, while the same growing direction of polar ZnO with previous results is found on (1 1 1) STO. For the atomic arrangements, two orthogonal domains and a single domain are observed on (0 0 1) and (1 1 1) STO, respectively. Photoluminescence spectra show that every sample has a sharp near-band-edge emission peak at about 3.28 eV without any deep-level emission band between 1.5 and 2.8 eV, implying a high optical quality. A violet emission around 3.0 eV is observed only in ZnO films on (0 0 1) and (0 1 1) STO substrates grown at 600 degrees C, which is discussed briefly. Additionally, the semipolar ZnO does not weaken the emission efficiency along with the reduction in the polarization effect compared with polar ZnO. These results show that high-quality polar and semipolar ZnO films can be grown on STO substrates by MOCVD.

Influence of thermal isolating grooves on the performance of the Mach-Zehnder interferometer-type thermo-optic variable optical attenuator

Two types of silicon-on-insulator thermo-optic variable optical attenuators (VOAs) based on a Mach-Zehnder interferometer and a multimode-interference coupler are fabricated, one with thermal isolating grooves to improve heating efficiency and the other without Comparison of optical and electrical properties, such as insertion losses, the maximum attenuation levels and the corresponding power consumptions, and the response times, is carried out between the two types of VOAs. The comparison results Indicate that use of thermal isolating grooves leads to better values for most characteristics and is an effective way to improve the performance of Mach-Zehnder interferometer-type thermo-optic devices. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure

Semiconductor optical amplifiers (SOAs) with n-type modulation-doped multiple quantum well structure have been investigated. The shortened carrier lifetime is derived from the PL spectrum and electrical modulation frequency response measurement. The carrier lifetime in semiconductor optical amplifiers with any n-type-2-modulated doping multiple quantum well structure is less than 60% of that in the undoped partner. The shortest measured carrier lifetime of 236 ps in the MD-MQW SOA with sheet carrier density of 3 x 10(12) cm(-2) was only 38% of that in the undoped MQW SOA, which can increase the wavelength conversion efficiency via four wave mixing by a factor of about 7 and switching speed via XGM and XPM applications by a factor of 2.63.

Low heat and high efficiency Nd:GdVO4 laser pumped by 913 nm

A Nd:GdVO4 crystal is pumped directly into its emitting level at 913 nm for the first time to the best of our knowledge. 3.35 W output laser emitting at 1063 nm is achieved in a 1.1 at.% Nd-doped Nd:GdVO4. The crystal absorbs pumping light of 4.30 W at 913 nm and produces a very low quantity of heat with the opto-optic conversion efficiency of 77.2%. The average slope efficiency is 81.2% from 0.21 W, at the threshold, to 4.30 W of absorbed pump power. Because of the very weakly thermal effect, the near-diffraction-limit beam is easily obtained with beam quality factor of M-2 approximate to 1.1.

High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect

High efficiency AlxGa1-xAs/GaAs heteroface solar cells have been fabricated by an improved multi-wafer squeezing graphite boat liquid phase epitaxy (LPE) technique, which enables simultaneous growth of twenty 2.3 X 2.3cm(2) epilayers in one run. A total area conversion efficiency of 17.33% is exhibited (1sun, AM0, 2.0 x 2.0cm(2)). The shallow junction cell shows more resistance to 1 MeV electron radiation than the deep one. After isochronal or isothermal annealing the density and the number of deep level traps induced by irradiation are reduced effectively for the solar cells with deep junction and bombardment under high electron fluences.

Conjugation of Selenophene with Bipyridine for a High Molar Extinction Coefficient Sensitizer in Dye-Sensitized Solar Cells

A high molar extinction coefficient heteroleptic polypyridyl ruthenium sensitizer, featuring a conjugated electron-rich selenophene unit in its ancillary ligand, has been synthesized and demonstrated as an efficient sensitizer in dye-sensitized solar cells. A nanocrystalline titania film stained with this sensitizer shows improved optical absorptivity, which is highly desirable for dye-sensitized solar cells with a thin photoactive layer. With preliminary testing, this sensitizer has already achieved a high efficiency of 10.6% measured under the air mass 1.5 global conditions.

High efficiency and stable dye-sensitized solar cells with an organic chromophore featuring a binary pi-conjugated spacer

We employed a binary spacer of orderly conjugated 3,4-ethyldioxythiophene and thienothiophene to construct a wide-spectral response organic chromophore for dye-sensitized solar cells, exhibiting a high power conversion efficiency of 9.8% measured under irradiation of 100 mW cm(-2) air mass 1.5 global (AM1.5G) sunlight and an excellent stability.

Solvent-vapor treatment induced performance enhancement of poly(3-hexylthiophene): methanofullerene bulk-heterojunction photovoltaic cells

The authors report enhanced poly(3-hexylthiophene) (P3HT):methanofullerene (PCBM) bulk-heterojunction photovoltaic cells via 1,2-dichlorobenzene (DCB) vapor treatment and thermal annealing. DCB vapor treatment can induce P3HT self-organizing into ordered structure leading to enhanced absorption and high hole mobility. Further annealing the device at a high temperature, PCBM molecules begin to diffuse into aggregates and together with the ordered P3HT phase form bicontinuous pathways in the entire layer for efficient charge separation and transport. Compared to the control device that is merely annealed, optical absorption, short-circuit current, and power conversion efficiency are increased for the DCB vapor-treated cell.

Near-diffraction-limited, 35.4 W laser-diode end-pumped Nd:YVO4 slab laser operating at 1342 nm

A diode stack end-pumped Nd:YVO4 slab laser at 1342 nm with near-diffraction-limited beam quality by using a hybrid resonator was presented. At a pump power of 139.5 W, laser power of 35.4 W was obtained with a conversion efficiency of 25.4% of the laser diode to laser output. The beam quality M-2 factors were measured to be 1.2 in the unstable direction and 1.3 in the stable direction at the output power of 29 W. (C) 2009 Optical Society of America