聚碳酸酯膜的高能Ar离子辐照效应研究

本文简要介绍了PC材料的基本属性、用途和聚合物辐照效应的发展现状，以及荷能离子与固体相互作用的基本理论。重点描述了在兰州重离子加速器上完成的1.4GeV Ar离子辐照PC膜实验和辐照样品的付里叶转换红外谱（FT-IR）、紫外、可见光谱（UV、VIS）、X-射线光电子谱（XPS）和电子自旋共振谱（ESR）分析。分析结果表明：高能Ar离子在PC膜中引起的的主要辐照效应是键的断裂和材料的降解，重要降解发生在能量沉积密度大于8.0 * 10~(22)eV/cm~3或者电子能损大于1.4keV/nm时。这也表明了材料中的自由基增多，可蚀刻性增大。随辐照剂量和电子能损的增大，材料逐渐碳化，同时有类苯环物质和炔基生成。炔基的生成有一个剂量阈值为5.5 * 10~(11)ions/cm~3，有一个电子能损阈值为0.61keV/nm。在紫外、可见谱中，380nm、450nm和500nm波长处的吸光度变化随电子能损按平方规律变化，随剂量按线性规律变化。

Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition

The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed

Damage of a High-Energy Solid Propellant and Its Deflagration-to-Detonation Transition

In order to assess the safety of high-energy solid propellants, the effects of damage on deflagration-to-detonation transition (DDT) in a nitrate ester plasticized polyether (NEPE) propellant, is investigated. A comparison of DDT in the original and impacted propellants was studied in steel tubes with synchronous optoelectronic triodes and strain gauges. The experimental results indicate that the microstructural damage in the propellant enhances its transition rate from deflagration to detonation and causes its danger increase. It is suggested that the mechanical properties of the propellant should be improved to restrain its damage so that the likelihood of DDT might be reduced.

Damage of a high-energy solid propellant and its effects on combustion

In order to improve the safety of high-energy solid propellants, a study is carried out for the effects of damage on the combustion of the NEPE (Nitrate Ester Plasticized Polyether) propellant. The study includes: (1) to introduce damage into the propellants by means of a large-scale drop-weight apparatus; (2) to observe microstructural variations of the propellant with a scanning electron microscope (SEM) and then to characterize the damage with density measurements; (3) to investigate thermal decomposition; (4) to carry out closed-bomb tests. The NEPE propellant can be considered as a viscoelastic material. The matrices of damaged samples axe severely degraded, but the particles are not. The results of the thermal decomposition and closed-bomb tests show that the microstructural damage in the propellant affects its decomposition and burn rate.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.

Temporal-space-transforming pulse-shaping system with a knife-edge apparatus for a high-energy laser facility

For the first time to our knowledge, in a high-energy laser facility with an output energy of 454.37 J, by using a temporal-space-transforming pulse-shaping system with our own design of a knife-edge apparatus, we obtained a quasi-square laser pulse. (c) 2005 Optical Society of America.

High-energy LDA switched side-pumped electro-optical Q-switched Nd : YAG ceramic laser

By employing a uniformly compact side-pumping system, a high-energy electro-optical Q-switched Nd:YAG ceramic laser has been demonstrated. With 420 W quasi-cw laser-diode-array pumping at 808 ran and a 100 Hz modulating repetition rate, 50 mJ output energy at 1064 nm was obtained with 10 ns pulse width, 5 W average output power, and 5 MW peak power. Its corresponding slope efficiency was 29.8%. The laser system operated quite stably and no saturation phenomena have been observed, which means higher output energy could be expected. Laser parameters between ceramic and single-crystal Nd:YAG lasers have been compared, and pulse characteristics of Nd:YAG ceramic with different repetition rate have been investigated in detail. The still-evolving Nd:YAG ceramics are potential super excellent media for high-energy laser applications. (C) 2007 Optical Society of America.

Preliminary study on the photoproduction of hydroxyl radicals in aqueous solution with Aldrich humic acid, algae and Fe(III) under high-pressure mercury lamp irradiation

Under a high-pressure mercury lamp (HPML) and using an exposure time of 4 h, the photoproduction of hydroxyl radicals ((OH)-O-.) could be induced in an aqueous solution containing humic acid (HA). Hydroxyl radicals were determined by high-performance liquid chromatography using benzene as a probe. The results showed that (OH)-O-. photoproduction increased from 1.80 to 2.74 muM by increasing the HA concentration from 10 to 40 mg L-1 at an exposure time of 4 h (pH 6.5). Hydroxyl radical photoproduction in aqueous solutions of HA containing algae was greater than that in the aqueous solutions of HA without algae. The photoproduction of (OH)-O-. in the HA solution with Fe(111) was greater than that of the solution without Fe(III) at pH ranging from 4.0 to 8.0. The photoproduction of (OH)-O-. in HA solution with algae with or without Fe(111) under a 250 W HPML was greater than that under a 125 W HPML. The photoproduction of (OH)-O-. in irradiated samples was influenced by the pH. The results showed that HPML exposure for 4 h in the 4-8 pH range led to the highest (OH)-O-. photoproduction at pH 4.0.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.

Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition

The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed that the Mn ions were successfully implanted into GaSb substrate. Clear double-crystal X-ray diffraction patterns of the Ga1-xMnxSb samples indicate that the Ga1-xMnxSb epilayers have the zinc-blende structure without detectable second phase. Magnetic hysteresis-loop of the Ga1-xMnxSb epilayers were obtained at room temperature (293 K) with alternating gradient magnetometry. (c) 2005 Elsevier B.V. All rights reserved.

(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition

The (Ga,Mn,N) samples were grown by the implantation of low-energy Mn ions into GaN/Al2O3 substrate at different elevated substrate temperatures with mass-analyzed low-energy dual ion beam deposition system. Auger electron spectroscopy depth profile of samples grown at different substrate temperatures indicates that the Mn ions reach deeper in samples with higher substrate temperatures. Clear X-ray diffraction peak from (Ga,Mn)N is observed in samples grown at the higher substrate temperature. It indicates that under optimized substrate temperature and annealing conditions the solid solution (Ga,Mn)N phase in samples was formed with the same lattice structure as GaN and different lattice constant. (C) 2003 Elsevier Science B.V. All rights reserved.