114 resultados para free surface


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A method was devised to evaluate the adhesion between a film and a substrate. A front-end coated bullet is accelerated by a gas gun and hits the substrate of the specimen under test. The impact generates a compressive stress pulse that propagates toward the film. After transmission through the interface, part of the pulse is reflected on the free surface of the film, and tensile stress arises at the film-substrate interface, possibly inducing debonding of the film. This dynamic process was demonstrated analytically and simulated numerically by the finite element method. The results validate the initial concept and lay the foundation for further optimization of this method.

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The depth distribution of the hole density p in 500 nm-thick (Ga,Mn)As layers is investigated. From Raman scattering spectra, it is found that the gradients of p are opposite in the as-grown and annealed layers. At the region around the free surface, with increasing etching depth, p significantly increases in the as-grown layer; however, p decreases distinctly in the annealed layer. Then, in the bulk, p becomes almost homogeneous for both cases. The etching-depth dependence of Curie temperature obtained from magnetic measurements is in agreement with the distribution characterization of p. These results suggest that annealing induces outdiffusion of Mn interstitials towards the free surface, and incomplete outdiffusion during the growth leads to an accumulation of Mn interstitials around the free surface of the as-grown (Ga,Mn)As. (c) 2006 Elsevier B.V. All rights reserved.

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It was determined that oxygen concentration in heavily Sb-doped silicon was about 40% lower than that in the lightly doped Czochralski grown silicon and decreased with increasing content of Sb by means of coincident elastic recoil detection analysis. Through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of SiO, and Sb2O3 evaporation can be neglected. The basic reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when element Sb with larger radius doped degenerately into silicon crystal. (C) 1999 Elsevier Science B.V. All rights reserved.

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We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115 K by postgrowth annealing for a 500-nm (Ga,Mn)As layer. Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.

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Thermal effects of the heat transfer at free surface (represented by Biot number) on the Rayleigh-Marangoni-Benard instability in a system of liquid-porous layers with top free surface are investigated numerically. The results indicate that this thermal effect can evidently lead to the mode transition of convection, which is overlooked in previous works. (C) 2010 Elsevier Ltd. All rights reserved.

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We have investigated the hole nucleation and growth induced by crystallization of thin crystalline-coil diblock copolymer films. Semicrystalline rodlike assemblies from neutral/selective binary solvent are used as seeds to nucleate crystallization at temperatures above the glass transition temperature (T-g) but below melting point (T-m). The crystallization of nanorods drives neighboring copolymer chains to diffuse into the growing nanorods. Depletion of copolymer chains yields hole nucleation and growth at the edge of the nanorods. Simultaneously, the polymer chains unassociated into the nanorods were oriented by induction from the free surface and the substrate, leading to limitation of the hole depth to the lamellar spacing, similar to20 nm. The holes, as well as the nanorods, grow as t(alpha), where t is the annealing time and a crossover in the exponent a. is found. The orientation and stretching of the copolymer chains by the surface and interface are believed to accelerate the crystallization, and in turn, the latter accelerates the growth rate of the holes. At T > T-m, the grains melt and the copolymer chains relax and flow into the first layer of the film.

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We have followed the time development of the microdomain structure in symmetric diblock copolymer poly(styrene-b-methyl methacrylate), P(S-b-MMA), ultrathin films via PMMA-selective solvent vapor treatment by atomic force microscopy (AFM). After preparation on a substrate preferentially attracting the PMMA block, PS forms a continuous layer at a film's free surface. With subsequent solvent vapor treatment, the film gradually shows a well-ordered hexagonally packed nanocylinders structure. It is shown that only when the film thickness is less than the 1/2L(0) (lamellar repeat spacing), and exposed to PMMA block selective solvent for an appropriate time, can the well-ordered hexagonally packed nanocylinders form. On an extended solvent vapor treatment, a mixed morphology containing nanocylinders and stripes appears, followed by the striped morphologies. When the annealing time is long enough, the film comes back to the flat surface again, however, with PMMA instead of PS dominating the free surface.

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In this Letter, crystal growth of a symmetric crystalline-amorphous diblock copolymer, poly(styrene-b-epsilon-caprolactone) (PS-b-PCL), in thin films was investigated by atomic force microscopy (AFM), Relief structures of holes and islands were formed during annealing the film at the molten state, and the in situ observation of subsequent crystal growth at room temperature indicated that the crystals were preferred to occur at the edge of holes or islands and grew into the interior area. It was concluded that the stretched PCL blocks at the edge of relief structures, caused by material transportation or deformation of the interface, could act as nucleation agents during polymer crystallization. The crystal growth rate of individual lamellae varied both from lamellae to lamellae and in time, but the area occupied by crystals increased constantly with time. At 22 degreesC, the growth rate was 1.2 x 10(-2) mum(2)/min with the scan size 2 x 2 mum(2).

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An alignment study of a liquid crystalline copolyether TPP-7/11(5/5) thin films has been carried out in a 10 kV . cm(-1) electrostatic field parallel to the thin film surface normal. This copolyether possesses a negative dielectric anisotropy. The chain molecules are homogeneously aligned in the electric field and they form two-dimensionally ordered lamellae in a tilted columnar phase when the samples were cooled to room temperature. It is observed that the chain molecules are splayed to form bent lamellae and the chain direction is perpendicular to the tangential direction of the lamellar surfaces. These lamellae thus become replicas of the chain orientation, Due to the flexoelectric effect and density fluctuation on the thin film free surface, disclinations having topological strength s = 1, c = pi /4 and defect walls form. These s = 1 disclinations possesses both left- and right-handednesses. Discussion of the defect formations have been attempted.

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Novel morphology of ring-banded spherulites in the surface of poly(epsilon-caprolactone)/poly(styrene-co-acrylonitrile) (PCL/SAN) blends was discovered and studied by SEM and TEM. The ring-banded spherulites separate into those exhibiting a very dark contrast, of relatively regular bundles of lamellae and others appearing with a much brighter intensity, of a coarse and irregular aggregates of lamellae. The origin of the novel morphology is not due to different crystalline structures as in the case of isotactic polypropylene because only one crystal structure exists in PCL/SAN blends. The formation may reflect whether spherulites in PCL/SAN blends are nucleated at the bottom surface or at the top (free) surface.

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Interfacial waves and wave-induced tangential stress are studied for geostrophic small amplitude waves of two-layer fluid with a top free surface and a flat bottom. The solutions were deduced from the general form of linear fluid dynamic equations of two-layer fluid under the f-plane approximation, and wave-induced tangential stress were estimated based on the solutions obtained. As expected; the solutions derived from the present work include as special cases those obtained by Sun et al. (2004. Science in China, Set. D, 47(12): 1147-1154) for geostrophic small amplitude surface wave solutions and wave-induced tangential stress if tire density of the upper layer is much smaller than that of the lower layer. The results show that the interface and the surface will oscillate synchronously, and the influence of the earth's rotation both on the surface wave solutions and the interfacial wave solutions should be considered.

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In this paper, we present an exact solution for nonlinear shallow water on a rotating planet. It is a kind of solitary waves with always negative wave height and a celerity smaller than linear shallow water propagation speed square-root gh. In fact, it propagates with a speed equal to (1 + a/h) square-root gh(1 + a/h) where a is the negative wave height. The lowest point of the water surface is a singular point where the first order derivative has a discontinuity of the first kind. The horizontal scale of the wave has actually no connection with the water depth.

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Song and Banner (2002, henceforth referred to as SB02) used a numerical wave tank (developed by Drimer and Agnon, and further refined by Segre, henceforth referred to as DAS) to study the wave breaking in the deep water, and proposed a dimensionless breaking threshold that based on the behaviour of the wave energy modulation and focusing during the evolution of the wave group. In this paper, two modified DAS models are used to further test the SB02's results, the first one (referred to MDAS1) corrected many integral calculation errors appeared in the DAS code, and the second one (referred to MDAS2) replaced the linear boundary element approximation of DAS into the cubic element on the free surface. Researches show that the results of MDAS1 are the same with those of DAS for the simulations of deep water wave breaking, but, the different values of the wavemaker amplitude, the breaking time and the maximum local average energy growth rate delta(max) for the marginal breaking cases are founded by MDAS2 and MDAS1. However, MDAS2 still satisfies the SB02' s breaking threshold. Furthermore, MDAS1 is utilized to study the marginal breaking case in the intermediate water depth when wave passes over a submerged slope, where the slope is given by 1 : 500, 1 : 300, 1 : 150 or 1 : 100. It is found that the maximum local energy density U increases significantly if the slope becomes steeper, and the delta(max) decreases weakly and increases intensively for the marginal recurrence case and marginal breaking case respectively. SB02's breaking threshold is still valid for the wave passing over a submerged slope gentler than 1 : 100 in the intermediate water depth.

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浮体在自由表面上的拖曳是一种常见的拖曳形式,由于自由表面上物体的运动情况相当复杂,目前对这种拖曳系统的设计和分析一般采用试验的方法。通过理论分析,对球形浮体在自由表面上的匀速直线拖曳运动建立了数学模型,其中对缆绳的分析采用Ablow-Schechter提出的有限差分模型,对球形浮体的分析采用水动力系数法,整个耦合系统用有限差分方法求解。之后,在拖曳水池进行了试验,试验结果表明,这种方法在拖曳速度比较低的情况下能够模拟真实情况,可以用来指导拖曳系统设计。