大兴安岭阿尔山沼泽鼓藻类中国新记录

大兴安岭阿尔山是我国沼泽分布最集中的地区之一,其中鼓藻类植物十分丰富。2004年7月,2005年8月、10月和2006年5月,作者先后4次在该地区采集标本共260号,在对标本鉴定过程中,发现有中国新记录鼓藻10个分类单位,隶属于4个属,包括8种2变种:厚皮鼓藻加厚变种Cosmarium pachydermumvar.incrassatum、穿孔鼓藻C.perforatum、伸长鼓藻C.protractum、具齿角星鼓藻Staurastrum denticulatum、不等角星鼓藻S.dispar、分叉角星

莫氏肾形虫武汉种群的形态学及表膜下纤毛系研究

中国科学院知识创新项目(KSCX2-2-06)资助

黄颡前驼形线虫发生和成熟的季节动态

报道了寄生于黄颡鱼(Pelteobagrus fulvidraco)胃、肠中的黄颡前驼形线虫(Procamallanus fulvidraconis)的成熟和感染丰度的季节动态。从2001年2月到2002年7月的18个月中,对来自于湖北省梁子湖的900尾黄颡鱼进行了调查,结果表明:该线虫的感染率除在2002年1月比较低(32%)外,其他月份都在90%以上,且没有显著的季节性变化(G=16.96F0.01[17,882]=1.98)。在对黄颡前驼形线虫雌虫成虫的三个阶段(成熟期、怀卵期和怀幼期)和雄虫成虫的

东湖螅状独缩虫(纤毛门:寡膜纲)的异质性

以螅状独缩虫(Carchesium polypinumLinne,1785)为研究对象,利用RAPD技术对武汉市南湖、沙湖和东湖3个湖区的螅状独缩虫样本进行了DNA多态性比较分析,以确认种群并期望促进微型生物种群生态学研究。结果如下:(1)从120条随机引物中筛选到31条有清晰扩增条带的,其中20条引物扩增出172条条带清晰、多态性高的条带,片段大小为100~1600bp,而其余11个引物扩增出59条相对多态性差的清晰条带,片段大小为100~1500bp;(2)扩增产物经SPSS12.0与RAPDista

Metallothionein-2 gene from the mandarin fish Siniperca chuatsi: cDNA cloning, tissue expression, and immunohistochemical localization

The metallothionein-2 (MT-2) gene was isolated from the mandarin fish, one of the most important industrial aquatic animals in China, by using rapid amplification of cDNA ends (RACE). The deduced amino acid sequence of MT-2 comprised 60 amino acids and showed approximately 62.3% identity to human metallothionein. Its promoter region was amplified by thermal asymmetric interlaced polymerase chain reaction (TAIL-PCR). The MT-2 gene consists of 3 exons and 2 introns, extending approximately 900 bp of genomic sequence. Phylogenetic analysis clearly demonstrated that MT-2 formed a clade with fish metallothionein. The promoter region contained 5 putative metal-regulatory elements (MREs) and 1 TATA box. Real-time quantitative RT-PCR analysis revealed that MT-2 transcripts were significantly increased in the brain and gills and were stable in the muscles, liver, and trunk kidney in Cd2+-stimulated fish. Western blotting analysis demonstrated that the protein of the MT-2 gene was expressed mainly in the gills, liver, heart, trunk kidney, muscle, and intestine; it was weakly detected in the brain and head kidney. Moreover, the MT-2 protein was immunohistochemically detected in the cytoplasm in the liver and trunk kidney. All the above results revealed that the mandarin fish MT-2 would be a useful biomarker for metal pollution. (C) 2008 Published by Elsevier Inc.

Effects of Cd2+ and Pb2+ on the substrate biofilms in the integrated vertical-flow constructed wetland

The effects of single Cd2+ and Pb2+, and combined Cd2+ and Pb2+ on dehydrogenase activity and polysaccharide content of the substrate biofilms in the integrated vertical-flow constructed wetland (IVCW) were studied. Dehydrogenase activities decreased linearly with the increasing concentrations of Cd2+ and Pb2+ at different times (6, 24, 72, and 120 h). The activities at both 6 and 24 h were significantly higher than that at 72 and 120 h in the case of single and combined treatments. The single Cd2+ and Pb2+ treatments significantly inhibited dehydrogenase activities at concentrations in excess of 20 mu mol/L Cd2+ and 80 mu mol/L Pb2+, respectively. The inhibitory effect of Cd2+ was much greater than that of Pb2+. At the same time, the combined treatment of Cd2+ and Pb2+ Significantly inhibited dehydrogenase activities at all five concentrations studied and the lowest combined concentration was 1.25 mu mol/L Cd2+ and 5 mu mol/L Pb2+. A synergistic effect of Cd2+ and Pb2+ was observed. On the other hand, polysaccharide contents varied unpredictably with the increasing concentrations of Cd2+ and Pb2+ and extended experimental time. There were no significant statistical differences within the range of concentration and time studied, whether singly or in combination. These results implied that the effects of heavy metals on biofilms should be a concern for the operation and maintenance of constructed wetlands.

Gene expression profiles in liver of zebrafish treated with microcystin-LR

Microcystin-LR (MC-LR) is the most frequently studied cyclic heptatoxin produced by cyanobacteria, which has tremendous negative impacts on fish, while its molecular mechanism behind remained unclear at present. Here, Affymetrix Zebrafish GeneChip was used to identify alterations in gene expression of zebrafish (Danio rerio) after MC-LR exposure. Among the 14,900 transcripts in the microarray, 273 genes were differentially expressed, in which 243 genes were elevated and 30 were decreased. According to GOstat analysis, MC-LR mainly influenced the cell cycle and mitogen-activated protein kinases (MAPK) signaling pathways. In addition, many immune-related genes were also influenced. These data suggest that MC-LR could promote tumorigenesis and cause immunotoxicity in fish. (C) 2008 Elsevier B.V. All rights reserved.

Quantum phase transitions in the S=1/2 distorted diamond chain

By means of the second derivative of the ground-state and first-excited energy, the quantum phase transitions (QPTs) for the distorted diamond chain (DDC) with ferromagnetic and antiferromagnetic frustrated interactions and the trimerized case are investigated, respectively. Our results show the plentiful quantum phases owing to the spin interaction competitions in the model. Meanwhile, by using the transfer-matrix renormalization-group technique, we study the two-site thermal entanglement of the DDC model in the thermodynamic limit for a further understanding of the QPTs.

An evidence of defect gettering in GaN

The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 degrees C. The peak at 3.41 eV exhibited an interesting behavior in as-grown and the implanted samples. Annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. Capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. Implantation dose of 5 x 10(15) ions/cm(2) caused the complete quenching of yellow band luminescence. (C) 2008 Elsevier B.V. All rights reserved.

Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

Effect of annealing on photoluminescence properties of neon implanted GaN

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10(14) to 9 x 10(15) cm(-2) and annealed isochronally at 800 and 900 degrees C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 degrees C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 degrees C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10(15) cm(-2). The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of VGaON complexes caused by high energy ion implantation.

Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles

High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high-temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V-N). We investigate the structural and electronic properties of V-N, single Cr atom, Cr-Cr atom pairs, Cr-V-N pairs, and so on. In each case, the most stable structure is obtained by comparing different atomic configurations optimized in terms of the total energy and the force on every atom, and then it is used to calculate the defect formation energy and study the electronic structures. Our total-energy calculations show that the nearest substitutional Cr-Cr pair with the two spins in parallel is the most favorable and the nearest Cr-V-N pair makes a stable complex. Our formation energies indicate that V-N regions can be formed spontaneously under N-poor condition because the minimal V-N formation energy equals -0.23 eV or Cr-doped regions with high enough concentrations can be formed under N-rich condition because the Cr formation energy equals 0.04 eV, and hence real Cr-doped AlN samples are formed by forming some Cr-doped regions and separated V-N regions and through subsequent atomic relaxation during annealing. Both of the single Cr atom and the N vacancy create filled electronic states in the semiconductor gap of AlN. N vacancies enhance the ferromagnetism by adding mu(B) to the Cr moment each but reduce the ferromagnetic exchange constants between the spins in the nearest Cr-Cr pairs. These calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidate the mechanism for the ferromagnetism and to explore high-performance Cr-doped AlN diluted magnetic semiconductors.

Electrical characterization of Er- and Pr-implanted GaN films

Hall, current-voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30 min. The origins of the deep defect levels are discussed. (C) 2005 American Institute of Physics.

Rapid thermal annealing properties of ZnO films grown using methanol as oxidant

ZnO thin films were grown by metal-organic chemical vapour deposition using methanol as oxidant. Rapid thermal annealing (RTA) was performed in an ambient of one atmosphere oxygen at 900 degrees C for 60 s. The RTA properties of the films have been characterized using scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, photoluminescence spectra and Hall measurement. The grains of the film were well coalesced and the surface became denser after RTA. The full-width at half maximum of rocking curves was only 496 arcsec. The ZnO films were also proved to have good optical quality. The Hall mobility increased to 43.2 cm(2) V-1 s(-1) while the electron concentration decreased to 6.6 x 10(16) cm(-3). It is found that methanol is a potential oxidant for ZnO growth and the quality of ZnO film can be improved substantially through RTA.