The effect of electrostatic field on the micro-crystal morphology of polymer films

The micro-crystal morphology of the films of isotactic polypropylene (iPP), poly(3-dodecylthiophene) (P3DDT) and iPP/P3DDT blend grown in different electrostatic environments has been investigated by using scanning electron microscope. The experimental results show that the micro-crystal morphology of polymer films was strongly dependent on electrostatic field. It was found that the micro-crystal morphology of the films of iPP, P3DDT and iPP/P3DDT blend grown in the electrostatic field was in the form of dendrite crystals, in which main stems were aligned in the field direction, and some branches of P3DDT were ruptured. However, the micro-crystals of the films of iPP, P3DDT and iPP/P3DDT blend have no crystal orientation in the absence of electrostatic field. (C) 2001 Elsevier Science Ltd. All rights reserved.

Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity

A two-dimensional axisymmetric numerical model is presented to study the influence of local magnetic fields on P-doped Si floating zone melting crystal growth in microgravity. The model is developed based on the finite difference method in a boundary-fitted curvilinear coordinate system. Extensive numerical simulations are carried out, and parameters studied include the curved growth interface shape and the magnetic field configurations. Computed results show that the local magnetic field is more effective in reducing the impurity concentration nonuniformity at the growth interface in comparison with the longitudinal magnetic field. Moreover, the curved growth interface causes more serious impurity concentration nonuniformity at the growth interface than the case with a planar growth interface.

Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals

The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.

Numerical simulation of magnetic field design for damping thermocapillary convection in a floating half-zone

The magnetic fields produced by electrical coils are designed for damping the the thermocapillary convection in a floating half-zone in microgravity. The fields are designed specially to reduce the flow near the free surface and then in the melt zone by adjusting the longitudinal coil positions close to the melt zone. The effects of the designed magnetic fields on reducing the flow velocity and temperature distribution non-uniformity in the melt zone are stronger than those of the case of an uniform longitudinal magnetic field obtained by numerical simulation, particularly at the melt-rod interface. It brings fundamental insights into the heat and mass transfer control at the solidification interface by the magnetic field design for crystal growth by the floating full-zone method.

Numerical Analysis of LEC Growth of GaAs with an Axial Magnetic Field

A set of numerical analyses for momentum and heat transfer For a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without all axial magnetic field was carried Out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar floats. Convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations Cor melt and crystal Lire considered together and solved simultaneously. The effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (C) 2002 Published by Elsevier Science Ltd.

Progress In Modeling Of Fluid Flows In Crystal Growth Processes

Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals

The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magnetic field was modeled and simulated by using a finite-volume based FLUTRAPP ( Fluid Flow and Transport Phenomena Program) code. The melt flow in the crucible was focused, which is a result of the competition of buoyancy, the centrifugal forces caused by the rotations of the crucible and crystal, the thermocapillary force on the free surfaces and the Lorentz force induced by the cusp magnetic field. The zonal method for radiative heat transfer was used in the growth chamber, which was confined by the crystal surface, melt surface, crucible, heat shield, and pull chamber. It was found that the cusp magnetic field could strength the dominant counter-rotating swirling flow cell in the crucible and reduce the flow oscillation and the pulling-rate fluctuation. The fluctuation of dopant and oxygen concentration in the growing crystal could thus be smoothed.

Study on flow characteristics of solid/liquid system in lysozyme crystal growth

During the process of lysozyme protein crystallization with batch method, the macroscopic flow field of solid/liquid system was observed by particle image velocimetry (PIV). Furthermore, a normal growth rate of (110) face and local flow field around a single protein crystal were obtained by a long work distance microscope. The experimental results showed that the average velocity, the maximal velocity of macroscopic solid/liquid system and the velocity of local flow field around single protein crystal were fluctuant. The effective boundary layer thickness delta(eff), the concentration at the interface Q and the characteristic velocity V were calculated using a convection-diffusion model. The results showed that the growth of lysozyme crystal in this experiment was dominated by interfacial kinetics rather than bulk transport, and the function of buoyancy-driven flow in bulk transport was small, however, the effect of bulk transport in crystal growth had a tendency to increase with the increase of lysozyme concentration. The calculated results, also showed that the order of magnitude of shear force was about 10(-21) N, which was much less than the bond force between the lysozyme molecules. Therefore the shear force induced by buoyancy-driven flows cannot remove the protein molecules from the interface of crystal.

A study on stratification of concentration in crystal-growth of alpha-liio3 by holographic-interferometry

A new thermoplastic-photoconductor laser holographic recording system has been used for real-time and in situ observation of alpha-LiIO3 crystal growth. The influence of crystallization-driven convection on the concentration stratification in solution has been studied under gravity field. It is found that the stratification is closely related to the seed orientation of alpha-LiIO3 crystal. When the optical axis of crystal seed C is parallel to the gravity vector g, the velocity of the concentration stratification is two times larger than that in the case of C perpendicular-to g. It needs 40 h for the crystalline system of alpha-LiIO3 to reach stable concentration distribution (expressed as tau) at 47.6-degrees-C. The time tau is not sensitive to the seed orientation. Our results provide valuable data for designing the crystal growth experiments ia space.

Crystal-growth in floating zone with phase-change and thermosolutal convections

Floating zone crystal growth in microgravity environment is investigated numerically by a finite element method for semiconductor growth processing, which involves thermocapillary convection, phase change convection, thermal diffusion and solutal diffusion. The configurations of phase change interfaces and distributions of velocity, temperature and concentration fields are analyzed for typical conditions of pulling rates and segregation coefficients. The influence of phase change convection on the distribution of concentration is studied in detail. The results show that the thermocapillary convection plays an important role in mixing up the melt with dopant. The deformations of phase change interfaces by thermal convection-diffusion and pulling rods make larger variation of concentration field in comparison with the case of plane interfaces.

Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals

The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.

Study On Buoyancy Convection Phenomenon In The Crystal Growth Process

Real-time phase shift Mach-Zehnder interference technique, imaging technique, and computer image processing technique were combined to perform a real-time diagnosis of NaClO3 crystal, which described both the dissolution process and the crystallization process of the NaClO3 crystal in real-time condition. The dissolution fringes and the growth fringes in the process were obtained. Moreover, a distribution of concentration field in this process was obtained by inversion calculation. Finally, the buoyancy convection phenomenon caused by gravity in the crystal growth process was analyzed. The results showed that this convection phenomenon directly influences the growth rate of each crystal face in the crystal.

Reflection and transmission of Gaussian beam from a uniaxial crystal slab

We investigate the characteristics of Gaussian beams reflected and transmitted from a uniaxial crystal slab with an arbitrary orientation of its optical axis. The formulas of the total electric and magnetic fields inside and outside the slab are derived by use of Maxwell's equations and by matching the boundary conditions at the interfaces. Numerical simulations are presented and the field values as well as the power densities are computed. Negative refractions are demonstrated when the beam is transmitted through a uniaxial crystal slab. Beam splitting of the reflected beam is observed and is explained by the resonant transmission for plane waves. Dependences of the lateral shift on the incident angle and beam width are discussed. Negative and positive lateral shifts are observed due to the spatial anisotropic properties.

Femtosecond pulse laser-induced self-organized nanogratings on the surface of a ZnSe crystal

Periodic nanostructures are observed on the surface of ZnSe after irradiation by a focused beam of a femtosecond Ti:sapphire laser, which are aligned perpendicular to the laser polarization direction. The period of self-organized grating structures is about 160 nm. The phenomenon is interpreted in terms of interference between the incident light field and the surface scattered wave of 800-nm laser pulses. With the laser polarization parallel to the moving direction we produce long-range Bragg-like gratings by slowly moving the crystal under a fixed laser focus. The nanograting orientation is adjusted by laser polarization and the accumulation effect.

Electrochromism accompanying ferroelectric domain inversion in congruent RuO2 : LiNbO3 crystal

Electrochromic phenomena accompanying the ferroelectric domain inversion in congruent RuO2-doped z-cut LiNbO3 crystals at room temperature are observed in experiments. During the electric poling process, the electrochromism accompanies the ferroelectric domain inversion simultaneously in the same poled area. The electrochromism is completely reversible when the domain is inverted from the reverse direction. The influences of electric field and annealing conditions on domain inversion and electrochromism are also discussed. We propose the reasonable assumption that charge redistribution within the crystal structure caused by domain inversion is the source for electrochemically oxidation and reduction of Ru ion to produce the electrochromic effect. (c) 2005 Optical Society of America.