Distinct Evolutionary Patterns Between Two Duplicated Color Vision Genes Within Cyprinid Fishes

We investigated the molecular evolution of duplicated color vision genes (LWS-1 and SWS2) within cyprinid fish, focusing on the most cavefish-rich genus-Sinocyclocheilus. Maximum likelihood-based codon substitution approaches were used to analyze the evolution of vision genes. We found that the duplicated color vision genes had unequal evolutionary rates, which may lead to a related function divergence. Divergence of LWS-1 was strongly influenced by positive selection causing an accelerated rate of substitution in the proportion of pocket-forming residues. The SWS2 pigment experienced divergent selection between lineages, and no positively selected site was found. A duplicate copy of LWS-1 of some cyprinine species had become a pseudogene, but all SWS2 sequences remained intact in the regions examined in the cyprinid fishes examined in this study. The pseudogenization events did not occur randomly in the two copies of LWS-1 within Sinocyclocheilus species. Some cave species of Sinocyclocheilus with numerous morphological specializations that seem to be highly adapted for caves, retain both intact copies of color vision genes in their genome. We found some novel amino acid substitutions at key sites, which might represent interesting target sites for future mutagenesis experiments. Our data add to the increasing evidence that duplicate genes experience lower selective constraints and in some cases positive selection following gene duplication. Some of these observations are unexpected and may provide insights into the effect of caves on the evolution of color vision genes in fishes.

Identification of a novel C1q family member in color crucian carp (Carassius auratus) ovary

Potential roles of Clq/tumor necrosis factor (TNF) superfamily proteins have been observed in vertebrate oogenesis and oocyte maturation, but no ovary-specific member has been identified so far. In this study, we have cloned and identified a novel member of Clq family with a Clq domain in the C-terminal from fully grown oocyte cDNA library of color crucian carp and demonstrated that the gene might be specifically expressed in ovary and therefore designated as Carassius auratus ovary-specific Clq-like factor, CaOClq-like factor. It encodes a 213 amino acid protein with a 17 amino acid signal peptide. There is only one protein band of about 24.5 kDa in the extracts from phase I to phase IV oocytes, but two positive protein bands are detected in the extracts of mature eggs and fertilized eggs. Furthermore, the mobility shift of the smaller target protein band cannot be eliminated by phosphatase treatment, but the larger protein band increases its mobility on the gel after phosphatase treatment, suggesting that the larger protein might be a phosphorylated form. Immunofluorescence localization indicates that the CaOClq-like proteins localize in cytoplasm, cytoplasm membrane and egg envelope of the oocytes at cortical granule stage and vitellogenesis stage, whereas they were compressed to cytoplasm margin in ovulated mature eggs and discharged into perivitelline space between cytoplasm membrane and egg envelope after egg fertilization. Further studies on distribution and translocation mechanism of the CaOClq-like factor will be benefit to elucidate the unique function in oogenesis, oocyte maturation and egg fertilization. (C) 2004 Elsevier Inc. All rights reserved.

Cyclin A2 is differentially expressed during oocyte maturation between gynogenetic silver crucian carp and gonochoristic color crucian carp

Silver crucian carp (Carassius auratus gibelio) is a unique gynogenetic fish. Because of its specific genetic background and reproduction mode, it is an intriguing model system for understanding regulatory mechanism of oocyte maturation division. It keeps its chromosomal integrity by inhibiting the first meiotic division (no extrusion of the first pole body). The spindle behavior during oocyte maturation is significantly different from that in gonochoristic fish. The chromosomes are first arranged in a tripolar spindle, and then they turn around and are reunited mutually to form a normal bipolar spindle. A new member of the fish A-type cyclin gene, cyclin A2, has been isolated by suppression of subtractive hybridization on the basis of its differential transcription in fully-grown oocytes between the gynogenetic silver crucian carp and gonochoristic color crucian carp. There are 18 differing amino acids in the total 428 residues of cyclin A2 between the two forms of crucian carps. In addition, cDNAs of cyclin A1 and cyclin B have also been cloned from them. Thus two members of A-type cyclins, cyclin A1 and cyclin A2, are demonstrated to exist in fish, just as in frog, humans, and mouse. Northern blotting reveals that cyclin A2 mRNA is more than 20-fold and cyclin A1 mRNA is about 2-fold in fully grown oocytes of gynogenetic silver crucian carp compared to gonochoristic color crucian carp. However, cyclin B does not show such a difference between them. Western blot analysis also shows that the cyclin A2 protein stockpiled in fully grown oocytes of gynogenetic crucian carp is much more abundant than in gonochoristic crucian carp. Moreover, two different cyclin A2 expression patterns during oocyte maturation have been revealed in the two closely related crucian carps. For color crucian carp, cyclin A2 protein is translated only after hormone stimulation. For silver crucian carp, cyclin A2 protein can be detected throughout the process of maturation division. The different expression of cyclin A2 may be a clue to understanding the special maturation division of gynogenetic silver crucian carp.

Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector

We report a bias voltage tunable two-color InAs/GaAs quantum dot infrared photodetector working under the normal incidence infared irradiation. The two-color detection of our device is realized by combining a photovoltaic and a photoconductive response by bias voltage tuning. The photovoltaic response is attributed to the transition of electron from the ground state to a high continuum state. The photoconductive response arises from the transition of electron from the ground state to the wetting layer state through the barrier via Fowler-Nordheim tunneling evidenced by a broad feature of the photocurrent peak on the high energy side. (C) 2008 American Institute of Physics.

Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

Design and optimization of photonic crystal coupling layer for bi-color quantum well infrared photodetectors

Finite difference time domain (FDTD) method is used for the simulation and analysis of electromagnetic field in the top coupling layer of GaAs/AlGaAs quantum well infrared photodetector (QWIP). Simulation results demonstrated the coupling efficiencies and distributions of electromagnetic (EM) field in a variety of 2D photonic crystal coupling layer structures. A photonic crystal structure for bi-color-QWIP is demonstrated with high coupling efficiency for two wavelengths.

Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector

Strongly vertically coupled InAs/GaAs quantum dots (QDs) with modulation doping are investigated, and polarization dependence of two-color absorptions was observed. Analysis of photoluminescence (PL) and absorption spectra shows that s-polarized absorptions at. 10.0 and 13.4 mu m, stem from the first excited state E-1 and the second excited state E-2 in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively, whereas p-polarized absorptions at 10.0 and 8.2 mu m stem from the first excited state E-1 and the ground E-g in the QDs to the bound state E-InGaAs in the InGaAs spacer, respectively. These measurements illustrate that transitions from excited states are more sensitive to normal incidence, which are very important in designing QD infrared detector. (C) 2007 Elsevier B.V. All rights reserved.

Full-color emission from In2S3 and ln(2)S(3): Eu3+ nanoparticles

New observations on the luminescence Of In2S3 and europium-doped In2S3 nanoparticles show a green (5 10 nm) emission from In2S3 and In1.8Eu0.2S3 nanoparticles while a blue (425 nm) emission is observed from ln(1.6)Eu(0.4)S(3) nanoparticles. Both the blue and green emissions have large Stokes shifts of 62 and 110 nm, respectively. Excitation with longer-wavelength photons causes the blue emission to shift to a longer wavelength while the green emission wavelength remains unchanged. The lifetimes of both the green and blue emissions are similar to reported values for excitonic recombination. When doped with Eu3+, in addition to the broad blue and green emissions, a red emission near 615 nm attributed to Eu3+ is observed. Temperature dependences on nanoparticle thin films indicate that with increasing temperature, the green emission wavelength remains constant, however, the blue emission shifts toward longer wavelengths. Based on these observations, the blue emission is attributed to exciton recombination and the green emission to Indium interstitial defects. These nanoparticles show full-color emission with high efficiency, fast lifetime decays, and good stability; they are also relatively simple to prepare, thus making them a new type of phosphor with potential applications in lighting, flat-panel displays, and communications.

Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy

Nitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E+ transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate conditions is found to be able to remove the nitrogen dimers. The required minimum annealing temperature coincides with the threshold-like onset of strong, near-band-gap photoluminescence. This finding suggests that the nitrogen dimers are connected with nonradiative recombination centers. (C) 2004 American Institute of Physics.

Photoluminescence of Te isoelectronic centers in ZnS : Te under hydrostatic pressure

The photoluminescence of four epitaxial ZnS: Te samples with Te concentration from 0.5% to 3.1% was investigated at different temperature and ambient pressure. Two well-known emission bands related to the isolated Te-1 and Te-2 pair isoelectronic centers were observed for the samples with Te concentrations of 0.5% and 0.65%. For the samples with Te concentrations of 1.4% and 3.1%, only was the Te-2-related peak observed. The pressure behaviors of these emission bands, were studied at 15 K. The Te-1 -related band has faster pressure shift to higher energy than ZnS band gap. On the other hand, the pressure coefficient of Te-2 -related bands is smaller than that of the ZnS band gap. According to a Koster-Slater model, we found that the increase of the density bandwidth of the valence band with pressure is the main reason for the faster shift of the Te-1 centers, while the relatively large difference in the pressure behavior of the Te-1 and Te-2 centers is mainly due to the difference in the pressure-induced enhancement of the impurity potential on Te-1 and Te-2 centers.

Recombination kinetics of Te isoelectronic centers in ZnSTe

The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x less than or equal to 0.85) alloys is studied by time-resolved photoluminescence (TRPL) at low temperature. The measured radiative recombination lifetimes of different Te bound exciton states are quite different, varying from a few nanoseconds to tens of nanosecond. As the bound exciton state evolves from a single Te impurity (Te-1) to larger Te clusters (Te-n, n=2,3,4), the recombination lifetime increases. It reaches maximum (similar to40 ns) for the Te-4 bound states at x=0.155. The increase of the exciton lifetime is attributed to the increasing exciton localization effect caused by larger localization potential. In the large Te composition range (x > 0.155), the exciton recombination lifetime decreases monotonically with Te composition. It is mainly due to the hybridization between the Te localized states and the host valence band states. The composition dependences of the exciton binding energy and the photoluminescence (PL) line width show the similar tendency that further support the localization picture obtained from the TRPL measurement. (C) 2005 American Institute of Physics.

Pressure behavior of the alloy band edge and nitrogen-related centers in GaAs0.999N0.001

The photoluminescence of a GaAsN alloy with 0.1% nitrogen has been studied under pressures up to 8.5 GPa at 33, 70, and 130 K. At ambient pressure, emissions from both the GaAsN alloy conduction band edge and discrete nitrogen-related bound states are observed. Under applied pressure, these two types of emissions shift with rather different pressure coefficients: about 40 meV/GPa for the nitrogen-related features, and about 80 meV/GPa for the alloy band-edge emission. Beyond 1 GPa, these discrete nitrogen-related peaks broaden and evolve into a broad band. Three new photoluminescence bands emerge on the high-energy side of the broad band, when the pressure is above 2.5, 4.5, and 5.25 GPa, respectively, at 33 K. In view of their relative energy positions and pressure behavior, we have attributed these new emissions to the nitrogen-pair states NN3 and NN4, and the isolated nitrogen state N-x. In addition, we have attributed the high-energy component of the broad band formed above 1 GPa to resonant or near-resonant NN1 and NN2, and its main body to deeper cluster centers involving more than two nitrogen atoms. This study reveals the persistence of all the paired and isolated nitrogen-related impurity states, previously observed only in the dilute doping limit, into a rather high doping level. Additionally, we find that the responses of different N-related states to varying N-doping levels differ significantly and in a nontrivial manner.

Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation

Enhanced near-infrared photoluminescence (PL) from sulfur-related isoelectronic luminescent centers in silicon was observed from thermally quenched sulfur-implanted silicon in which additional copper or silver ions had been coimplanted. The PL from the sulfur and copper coimplanted silicon peaked between 70 and 100 K and persisted to 260 K. This result strongly supports the original conjecture from the optical detection of magnetic resonance studies that the strong PL from sulfur-doped silicon comes from S-Cu isoelectronic complexes [Frens , Phys. Rev. B 46, 12316 (1992); Mason , ibid. 58, 7007 (1998).]. (c) 2007 American Institute of Physics.

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts

Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 American Institute of Physics.

Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films

Con-elation between nc-Si, Er3+ and nonradiative defects in Er-doped nc-Si/SiO2 films is studied. Upon the 514.5 run laser excitation, the samples exhibit a nanocrystal-related spectrum centered at around 750 nm and an Er3+ luminescence line at 1.54mum. With increasing Er3+ content in the films,the Er3+ emission becomes intense while the photoluminescence at 750 nm decreases. Hydrogen passivation of the samples is shown to result in increases of the two luminescence peaks. However, the effect of hydrogen treatment is different for the samples annealed at different temperatures. The experimental results show that the coupling between Er3+, nc-Si and noradiative centers has a great influence on photoluminescence from nc-Si/SiO2 < Er > films.