Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)

We have grown MnxGe1-x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn0.06Ge0.94 film while new phase appears in the Mn0.1Ge0.9 film. Nanocrystals are formed in the Mn0.06Ge0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn0.06Ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 X 10(19) cm(-3) while the MnxGe1-x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn0.06Ge0.94 film is ferromagnetic at room temperature. (c) 2005 Elsevier Ltd. All rights reserved.

Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy

The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE). When a direct current (DC) is used to heat the sample, long distance migration of Ga adatoms and diffusion asymmetry of N adatoms at steps are observed. On the other hand, if an alternating current (AC) is used, no such preferential adatom migration is found. This effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. The implications of such current-induced surface migration to GaN epitaxy are subsequently investigated. It is seen to firstly change the distribution of Ga adatoms on a growing surface, and thus make the growth to be Ga-limited at one side of the sample but N-limited at the other side. This leads to different optical qualities of the film and different morphologies of the surface. (C) 2001 Elsevier Science B.V. All rights reserved.

Ultraviolet-blue electroluminescence from Gd3Ga5O12 : Ag

UV-blue light was obtained from a thin-film electroluminescence device using Gd3Ga5O12:Ag as a light-emitting layer, which was deposited by using electron-beam evaporation. The crystal composition and structure of Gd3Ga5O12:Ag were studied by x-ray powder diffraction, The Gd3Ga5O12:Ag has a photoluminescence emission which peaked at around 397 and 467 nm, which were attributed to the oxide vacancies and Ag+, respectively. The brightness of 32 cd/m(2) was obtained when an alternating voltage of 130 V at 1 kHz was applied. (C) 2000 American Institute of Physics. [S0003-6951(00)05031-2].

Theory of terahertz-photocurrent resonances in miniband superlattices

The currents of de and ac components and their phase-angle cosines for a superlattice under a direct bias and alternating field are calculated with the balance equations. It is found that the de currents as functions of the direct field show resonance peaks at the fields corresponding to the Bloch frequency equal to n omega. With increasing alternating field intensity the resonance peaks of higher harmonic increase, and simultaneously the first peak caused by the de field decreases. The results are in good agreement with the experimental results, indicating that this resonance can be understood in terms of electron acceleration within the miniband, i.e., it is a bulk superlattice effect, rather than caused by the electric-field localization mechanism (Wannier Stark ladder). The phase-angle cosine for the first harmonic cos phi(1) becomes negative when the Bloch frequency increases to be larger than the frequency of the ac field omega, and it also shows resonance peaks at the resonance frequencies n omega. The negative cos phi(1) may cause the energy transferred to the alternating field, i.e., oscillation of the system.

基于一阶迁移系统的限界模型检测工具实现

基于布尔可满足性(SAT)的限界模型检测是一种高效的模型检测方法，它具有快速查错，反例最小化等特点，已经成为学术界和工业界关注的热点。近些年出现了很多集成限界模型检测算法的验证工具，如ITC-IRST、卡内基梅隆大学(CMU)等多家科研机构联合开发的NuSMV工具；加利福尼亚大学伯克莱分校(UC Berkeley)、科罗拉多大学博尔德分校(CU Boulder)联合开发的VIS工具等。因此目前对于限界模型检测方法的研究和相关工具的设计与开发具有重要而广泛的意义。在进行限界模型检测的建模过程中，不同的工具采用了自定义的建模语言。如经典工具SPIN采用的建模语言是Promela语言，NuSMV采用的是自定义的NuSMV语言。随着系统验证规模的不断增大，建模语言的特点将会直接影响到建模的效率。例如采用NuSMV语言去建立一个网络通信协议模型会显得比较复杂和耗时，应用NuSMV语言去描述一个简单的数据链路层网络协议ABP协议(Alternating Bit Protocol)就不如采用Promela语言去描述显得直观和自然。 为了简化在限界模型检测过程中模型的建立过程，本文给出了一种采用基于一阶迁移系统语言描述的模型建立方法，并在一阶迁移系统语言中实现了通道的功能，从而增强了描述能力。在此基础上完成了一个以基于插值和k步归纳限界验证算法为核心的模型检测工具(BMCF)。最后利用该工具对常见的互斥协议，简单数据传输协议的性质进行了分析与验证。结果表明，利用该工具对系统进行建模具有方便直观的特点，并借助实现的验证算法能高效的检验安全性质的正确性，如果性质不成立工具会给出反例提示。

CERIUM SILICIDE FORMATION IN THIN CE SI MULTILAYER FILMS

Alternating layers of Si(200 angstrom thick) and Ce(200 angstrom thick) up to 26 layers altogether were deposited by electron evaporation under ultrahigh vacuum conditions on Si(100) substrate held at 150-degrees-C. Isothermal, rapid thermal annealing has been used to react these Ce-Si multilayer films. A variety of analytical techniques has been used to study these multilayer films after annealing, and among these are Auger electron spectroscopy, Rutherford backscattering, X-ray diffraction, and high resolution transmission electron microscopy. Intermixing of these thin Ce-Si multilayer films has occurred at temperatures as low as 150-degrees-C for 2 h, when annealed. Increasing the annealing temperature from 150 to 400-degrees-C for 1 h, CeSi2 forms gradually and the completion of reaction occurs at approximately 300-400-degrees-C. During the formation of CeSi2 from 150-400-degrees-C, there is some evidence for small grains in the selected area diffraction patterns, indicating that CeSi2 crystallites were present in some regions. However, we have no conclusive evidence for the formation of epitaxial CeSi2 layers, only polycrystals were formed when reacted in the solid phase even after rapid thermal anneal at 900-degrees-C for 10 s. The formation mechanism has also been discussed in combining the results of the La-Si system.

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.

Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy

The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE). When a direct current (DC) is used to heat the sample, long distance migration of Ga adatoms and diffusion asymmetry of N adatoms at steps are observed. On the other hand, if an alternating current (AC) is used, no such preferential adatom migration is found. This effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. The implications of such current-induced surface migration to GaN epitaxy are subsequently investigated. It is seen to firstly change the distribution of Ga adatoms on a growing surface, and thus make the growth to be Ga-limited at one side of the sample but N-limited at the other side. This leads to different optical qualities of the film and different morphologies of the surface. (C) 2001 Elsevier Science B.V. All rights reserved.

Numerical Study on the Distribution Characteristics of TP in Taihu Lake, China

A depth-averaged two-dimensional hydrodynamics model and a two-dimensional water quality model, bases on the alternating direction implicit (ADI) method, is developed to study the distribution characteristics of total phosphorus (TP) in Taihu Lake. Wind stress, the pollution source from the inflow rivers, releasing rate of TP from the bottom sediment and water diversion from Yangtze River are the effecting factors of TP distribution. By using the model proposed in this paper, the concentration field of the total phosphorus was simulated, which leads to the conclusion that the flow field has a great influence on the spatial and temporal distribution of TP in the Taihu Lake.

Design optimization of the APF DTL in the SSC-linac

A linear accelerator as a new injector for the SSC (Separated Sector Cyclotron) of the HIRFL (Heavy ton Research Facility Lanzhou) is being designed. The DTL (Drift-Tube-Linac) has been designed to accelerate U-238(34+) from 0.140 MeV/u to 0.97 MeV/u. To the first accelerating tank which accelerates U-238(34+) to 0.54 MeV/u, the approach of Alternating-Phase-Focusing (APF) is applied. The phase array is obtained by coupling optimization software Dakota and beam optics code LINREV. With the hybrid of Multi-objective Genetic Algorithm (MOGA) and a pattern search method, an optimum array of asynchronous phases is determined. The final growth, both transversely and longitudinally, can meet the design requirements. In this paper, the deign optimization of the APF DTL is presented.

水、氮、磷对杨树生物量的耦合效应

根据黄土高原因水肥不协调而形成大面积低效林的问题 ,以水肥耦合为中心 ,以 1龄杨树幼苗为研究对象 ,采用三因子五水平正交旋转组合回归设计方法 ,利用盆栽试验和定量分析的手段 ,研究探讨了不同水肥条件下 ,水、N、P三因子对杨树生物量的影响 ,结果表明三因素对杨树生物量存在着耦合交互效应 ,不同的水、N、P配合有不同的生物量积累 .因此 ,合理施肥、量水配肥是改善黄土高原因水肥不协调而形成大面积低效林的有效途径

Rare-earth-metal mixed hydride/aryloxide complexes bearing mono(cyclopentadienyl) ligands. Synthesis, CO2 fixation, and catalysis on copolymerization of CO2 with cyclohexene oxide

Hydrogenolysis of mono(cyclopentadienyl)-ligated rare-earth-metal bis(alkyl) complexes Cp'Ln-(CH2SiMe3)2(THF) (Ln = Y (1a), Dy (1b), Lu (1c); Cp' = C5Me4SiMe3) with PhSiH3 afforded the mixed hydride/alkyl complexes [Cp'Ln(mu-H)(CH2SiMe3)(THF)](2) (Ln = Y (2a), Dy (2b), Lu (2c)). The overall structure of complexes 2a-c is a C-2-symmetric dimer containing a planar symmetric Ln(2)H(2) core at the center of the molecule. Deprotonation of ArOH (Ar = C6H2-Bu-t(2)-2,6-Me-4) by the metal alkyl group of 2a-c led to formation of the mixed hydride/aryloxide derivatives [Cp'Ln(mu-H)(OAr)](2) (Ln = Y (3a), Dy (3b), Lu (3c)), which adopt the dimeric structure through hydride bridges with trans-accommodated terminal aryloxide groups.

Syntheses, structures and reactions of a series of beta-diketiminatoyttrium compounds

This paper describes the synthesis and selected reactions of a series of crystalline mono(beta-diiminato) yttrium chlorides 3a, 3b, 4a, 4b, 5a, 5b, 5c and 9. The X-ray structure of each has been determined, as well as of [YCl(L-4)(2)] (6), [Y(L-1)(2)OBut] (7) and [Y{CH(SiMe3)(2)}(thf)(mu-Cl)(2)Li(OEt2)(2)(mu-Cl)](2) (8).

Layer-by-layer assembly of functional silica and Au nanoparticles for fabricating electrogenerated chemiluminescence sensor

We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy)3" and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy)3 2'-doped silica nanoparticles and Au nanoparticles.

Effect of the nature of annealing solvent on the morphology of diblock copolymer blend thin films

The morphologies and structures for the thin film of blend systems consisting of two asymmetric polystyrene-block-polybutadiene (SB) diblock copolymers induced by annealing in the vapor of different solvents, namely, cyclohexane, benzene, and heptane, which have different selectivity or preferential affinity for a certain block, were investigated by tapping mode atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results revealed that even a slight preferential affinity of good solvent for one block would strongly alter the morphology of the blend thin film.