185 resultados para WELL INFRARED PHOTODETECTORS


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We report on the upconversion luminescence of a pure YVO4 single crystal excited by an infrared femtosecond laser. The luminescent spectra show that the upconversion luminescence comes from the transitions from the lowest excited states T-3(1), T-3(2) to the ground state (1)A(1) of the VO43-. The dependence of the fluorescence intensity on the pump power density of laser indicates that the conversion of infrared irradiation to visible emission is dominated by three-photon excitation process. We suggest that the simultaneous absorption of three infrared photons promotes the VO43- to excited states, which quickly cascade down to lowest excited states, and radiatively relax to ground states, resulting in the broad characteristic fluorescence of VO43-. (c) 2005 Optical Society of America.

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We investigate the enhancement of Kerr nonlinearity in an asymmetric GaAs double quantum well via Fano interference, which is caused by tunneling from the excited subband to the continuum. In our structure, owing to Fano interference, the Kerr nonlinearity can be enhanced by appropriately choosing the values of the detunings and the intensity of the pump field, while cancel the linear and nonlinear absorptions.

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We experimentally investigate the high-order harmonic generation in argon gas using a driving laser pulse at a center wavelength of 1240 nm. High-contrast fine interference fringes could be observed in the harmonic spectra near the propagation axis, which is attributed to the interference between long and short quantum paths. We also systematically examine the variation of the interference fringe pattern with increasing energy of the driving pulse and with different phase-matching conditions.

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We experimentally observe the formation of X-waves at fundamental, third harmonic, and fifth harmonic wavelengths by infrared (central wavelength at similar to 1500 nm) femtosecond laser pulse filamentation in air. By fitting the angularly resolved spectra of the fundamental and harmonic waves using X-wave relations, we confirm that all the X-waves have nearly the same group velocity, indicating that they are locked in space and time during their propagation in filament.

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A novel scheme to eliminate the artificial background phase jitter is proposed for measuring the carrier-envelope phase drift of tunable infrared femtosecond pulses from an OPA laser. Different from previous methods, a reference spectral interference measurement is performed, which reveals the artificial phase jitter in the measurement process, in addition to the normal f-to-2f interference measurement between the incident laser pulses and it second harmonic. By analyzing the interference fringes, the accurate CEP fluctuation of the incident pulses is obtained. (c) 2008 Optical Society of America

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Ultrashort light-matter interactions between a linear chirped pulse and a biased semiconductor thin film GaAs are investigated. Using different chirped pulses, the dependence of infrared spectra on chirp rate is demonstrated for a 5 fs pulse. It is found that the infrared spectra can be controlled by the linear chirp of the pulse. Furthermore, the infrared spectral intensity could be enhanced by two orders of magnitude via appropriately choosing values of the linear chirp rates. Our results suggest a possible scheme to control the infrared signal.

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We experimentally investigate the evolution of an angularly resolved spectrum of third harmonic generated by infrared femtosecond laser pulse filamentation in air. We show that at low pump intensity, phase matching between the fundamental and third-harmonic waves dominates the nonlinear optical effect and induces a ring structure of the third-harmonic beam, whereas at high pump intensity, the dispersion properties of air begin to affect the angular spectrum, leading to the formation of a nonlinear X wave at third harmonic.

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We investigate the emission spectra of the semiconductor quantum well for few-cycle and sub-cycle pulse exciting. We find that Fano interference may induce third harmonic enhancement. Third harmonic enhancement varies with the magnitude and duration of the incident pulse, and may be enhanced by approximately one order of magnitude for the low intensity region of the sub-cycle incident pulse exciting.

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Widely tunable optical parametric amplification (OPA) in the IR region through quasi-phase-matching technology is demonstrated theoretically in periodically-poled lithium niobate (PPLN). For a 532nm pump wavelength and a broadband signal wavelength near 1300 nm, we can obtain the optimum grating period from phase-matching curves for different grating periods to achieve continuously tunable OPA by tuning the angle in a small range. Tunable OPA range of 200nm near 1300 mn can be obtained with a tuning incidence signal angle of 2.2 degrees.

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The authors report the measurement of the angularly resolved spectrum of the third harmonic generated in a femtosecond filament in air and its evolution with increasing pump power. Pumped by a focused infrared ultrashort pulse with a carrier wavelength of 1270 nm, a pulse duration of similar to 20 fs, and pulse energy up to 487 mu J, the generated third harmonic is composed of an on-axis emission and a conical ring emission. When the pump power is sufficiently high, angularly resolved spectra with significant X-like feature could be observed, indicating the formation of nonlinear X wave at third harmonic. (c) 2008 American Institute of Physics.

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We investigate the carrier-wave Rabi flopping effects in an asymmetric semiparabolic semiconductor quantum well (QW) with few-cycle pulse. It is found that higher spectral components of few-cycle ultrashort pulses in the semiparabolic QW depend crucially on the carrier-envelope phase (CEP) of the few-cycle ultrashort pulses: continuum and distinct peaks can be achieved by controlling the CEP. Our results demonstrate that by adjusting the CEP of few-cycle ultrashort pulses, the intersubband dynamics in the asymmetric semiparabolic QW can be controlled in an ultrashort timescale with moderate laser intensity. (c) 2008 Optical Society of America.

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Bi-doped BaF2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF2 crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi2+ or Bi+ centers adjacent to F vacancy defects are the origins of the observed NIR emissions. (C) 2009 Optical Society of America

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This paper reports that the tunable self-phase-stabilized infrared laser pulses have been generated from a two-stage optical parametric amplifier. With an 800 nm pump source, the output idler pulses are tunable from 1.3 mu m to 2.3 mu m, and the maximum output energy of the idler pulses is higher than 1 mJ at 1.6 mu m by using 6 mJ pump laser. A carrier-envelope phase fluctuation of similar to 0.15 rad (rms) for the idler pulses is measured for longer than one hour by using a home build f-to-2f interferometer.

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Using a nonperturbative quantum scattering theory, the photoelectron angular distributions (PADs) from the multiphoton detachment of H- ions in strong, linearly polarized infrared laser fields are obtained to interpret recent experimental observations. In our theoretical treatment, the PADs in n-photon detachment are determined by the nth-order generalized phased Bessel (GPB) functions X-n(Z(f),eta). The advantage of using the GPB scenario to calculate PADs is its simplicity: a single special function (GPB) without any mixing coefficient can express PADs observed by recent experiments. Thus, the GPB scenario can be called a parameterless scenario.

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Infrared (IR) luminescence covering 1.1 to similar to 1.6 mu m wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 mu s, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.