染料激光器混合染料体系的研究

分子间的能量转移是当今光化学、光生物学和光物理学中的一个重要课题，长期以来一直受到人们的广泛关注。六十年代染料激光器出现以后，人们很快就将这一原理应用研究染料激光器的工作物质。选择适当的混合染料溶液作为染料激光器的工作物质，可以提高某些染料的激光输出能量或扩展激光波长覆盖范围，这已成为分子间能量转移的一个新的应用领域。本文首先阐述分子间能量转移的基本理论并对混合染料体系的选择及其研究进行了文献综述。另外，对研究过程中，他人工作改采用的实验手段也进行了概述，特别对荧光寿命的测量讨论得较为仔细。实验中我们着重研究了R6G/Red B、R6G/NB两个二元体系和C440/C540/Saf.~(-1)、C440/Fl.Na/Saf.~(-1)以及R6G/Red B/Ox725三个三元混合染料体系。实验方法主要通过测量混合染料溶液的荧光光谱、荧光寿命和激光输出性能。激发源波长始终固定在337.1nm。荧光光谱和荧光寿命多是在英国Applied Photophysics公司生产的SP-70型纳秒荧光分光光度计上测量的。这套仪器的设置从激发、探测以至最后的数据处理（微机处理）都达到较高的灵敏度和精确度。更为主要的是采用了时间相关单光子计数技术这一新的测量方法，真有较高的时间分辨本领，为染料分子的短寿命测量提供了重复性极好的可靠数据。并且由于这套仪器的信噪比大，能够测出高浓度溶液情况下的荧光光谱，而一般地荧光光谱仪却很难探测。激光调谐范围的测量是在QJD-9型染料激光器上进行的，光路结构安排合理，各项技术指标都达到了较高水平。激光强度的测量是采用了通用的光路结构测量混合染料溶液的超辐射模式的激光输出。下面是我们的实验结果。1.R6G/Red B、R6G/NB二元混合染料体系。通过测量R6G/Red B混合染料溶液的荧光光谱，了解到给体R6G有较强的能量转移给受体Red B。又通过荧光寿命的测量，表明溶液浓度达到～10~(-3) mol.L~(-1)时，分子间的能量转移主要是共振转移，且符合Stern-Volmer关系。由此我们进行了一定量讨论，计算了不同浓度溶液中给体与受体分子间的平均距离R。激光性能的测量表明这一体系具有较大的激光强度输出，且通过改变给体、受体浓度可扩展调谐范围。对于R6G/NB，我们做了类似的研究。但与R6G/Red B不同的是，R6G/NB始终是双峰。激光性能测量表明此体系可以扩展调谐范围，且可改善NB的激光输出，降低泵浦阈值。2.C440/C540/Saf.-T、C440/Fl.Na/Saf.-T及R6G/Red B/Ox725三元体系。C440/C540/Saf.-T混合染料溶液的荧光光谱研究表明，三种染料分子之间有较强的能量转移发生，且与溶液浓度配比适当时，可以同时获得三个不同波段处的荧光发射，从而可望扩展波长调谐范围。见图1。对于C440/Fl.Na/Saf.-T混合溶液，我们主要是采用光谱手段，对能量转移过程做了研究。结果表明C440/Fl.Na之间以辐射转移为主要机制，Fl.Na/Saf.-T之间在波度稍大时，发生共振转移的可能性较强。另外对能量转移过程进行了一些定量的讨论。计算求得C440/Fl.Na的临距离R_o = 47.5A，小于Fl.Na/Saf.-T的临界距离R_o = 59.0A，因而后者发生共振转移的可能性较大。R6G/Red B/Ox725体系与前两体系相比是向长波长方向扩展了。激光性能的测量表明，此体系可以作为染料激光器的工作物质。实验结果还表明三种染料混合以后的激光性能比Red B/Ox725二组份混合的效果好得多。R6G/Red B/Ox725的超辐射是图2所示。

Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy

Films of GaN have been grown using a modified MBE technique in which the active nitrogen is supplied from an RF plasma source. Wurtzite films grown on (001) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure, the (0001) planes of the layers being parallel to the (001) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (111) oriented GaAs and GaP substrates. The improved structural properties of such films, assessed using X-ray and TEM method, correlate with better low-temperature FL.

A transmission electron microscopy study of microstructural defects in proton implanted silicon

The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: {001} platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. (C) 1996 American Institute of Physics.

稳定可调谐的单纵模多环形腔掺铒光纤激光器

提出了一种多环形腔(MRC)结构的稳定可调的单纵模(SLM)掺铒光纤激光器,多环形腔结构由双环形有源腔和两个次级无源腔组成。这种激光器是利用光纤法布里-珀罗可调滤波器(FFP-TF)以及光学光栅滤波器(OGF)两种滤波器和多环形腔结构相结合来共同选模。可实现波长调节范围为1528～1565 nm,在整个波长调节范围内边模抑制比大于44.53 dB,在1554 nm附近边模抑制比可以达到最大值51.18 dB, 输出功率为-8.84 dBm,通过应用多环型腔结构,激光器的输出很稳定,在18 min的观察时间内,中心波长的变化小于0.02 nm,输出功率的变化小于0.04 dBm,实现了稳定且可调谐的单纵模输出。

Silicon: the promising material for phontonic integrated circuits platform

The development of optical network demands integrated arid multiple functionality modules to lowing cost and acquire highly reliability. Among the various contender materials to be photonic integrated circuits platform, silicon exhibits dominant characteristics and is the most promising platform materials. The paper compares the characteristics of some candidate materials with silicon and reviews recent progress in silicon based photonic integration technology. Tile challenges to silicon for optical integration for optical networking application arc also indicated.

The development of long - Term ambulatory pH monitoring system and its clinical application

This paper introduced a long-term ambulatory intragastric pH monitoring system, which is designed for prolonged ambulatory studies of Gastroesophageal Reflux Diseases. The whole system is composed of the gastric catheter with two pH sensors, a small data logger (Microdatalog), and a notebook PC. In this paper, the design of monitoring system hardware and software are described in detail. Clinical applications reveal good results.

Measurement of respiratory acoustic impedance in children by a modified forced oscillation method

An introduction to a modified forced oscillation method, square-wave excitation technique, including fundamentals and methods, as used in respiratory function examination. On the basis of experimental results and theoretical predictions, we suggest that Respiratory Acoustic Impedance (RAI) measurement by spectral analysis can significantly improve estimation of contribution to RAI from different part of respiratory tract. The outcome is of considerable interest in the study of lung disease, such as COPD and asthma in young children.

Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells

Cyclotron resonance in CdTe/CdMgTe quantum wells (QWs) was studied. Due to the polaron effect the zero-field effective mass is strongly influenced by the QW width. The experimental data have been described theoretically by taking into account electron-phonon coupling and the nonparabolicity of the conduction band. The subband structure was calculated self-consistently. The best fit was obtained for an electron-phonon coupling constant alpha = 0.3 and bare electron mass of m(b) = 0.092m(0).

Methods to tune the electronic states of self-organized InAs/GaAs quantum dots

After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. Ejected energy of self-organized InAs/GaAs quantum dots has been successfully tuned in a controlled manner by changing the thickness of GaAs capping layer and the time of growth interruption and InAs layer thickness. The photoluminescence (PL) spectra showing the shift of the peak position reveals the tuning of the electronic states of the QD system. Enhanced uniformity of Quantum dots is observed judging from the decrease of full width at half maximum of FL. Injection InAs/GaAs quantum dot lasers have been fabricated and performed on various frequencies. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures

A systematic study of electron cyclotron resonance (CR) in two sets of GaAs/Al0.3Ga0.7As modulation-doped quantum-well samples (well widths between 12 and 24 nm) has been carried out in magnetic fields up to 30 T. Polaron CR is the dominant transition in the region of GaAs optical phonons for the set of lightly doped samples, and the results are in good agreement with calculations that include the interaction with interface optical phonons. The results from the heavily doped set are markedly different. At low magnetic fields (below the GaAs reststrahlen region), all three samples exhibit almost identical CR which shows little effect of the polaron interaction due to screening and Pauli-principle effects. Above the GaAs LO-phonon region (B > similar to 23 T), the three samples behave very differently. For the most lightly doped sample (3 x 10(11) cm(-2)) only one transition minimum is observed, which can be explained as screened polaron CR. A sample of intermediate density (6 x 10(11) cm(-2)) shows two lines above 23 T; the higher frequency branch is indistinguishable from the positions of the single line of the low density sample. For the most heavily, doped sample (1.2 x 10(12) cm(-2)) there is no evidence of high frequency resonance, and the strong, single line observed is indistinguishable from the lower branch observed from sample with intermediate doping density. We suggest that the low frequency branch in our experiment is a magnetoplasmon resonance red-shifted by disorder, and the upper branch is single-particle-like screened polaron CR. (C) 1998 Elsevier Science B.V. All rights reserved.

Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well samples in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all samples near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons. (C) 1998 Elsevier Science B.V. All rights reserved.