Abnormal energy dependence of photoluminescence decay time in InGaN epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers. By measuring the exciton decay time as a, function of the monitored emission energy at different temperatures, we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 120K. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.

Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation

Under short pulse laser excitation, we have observed an extra high-energy photoluminescence (PL) emission from GaNAs/GaAs single quantum wells (QWs). It dominates the PL spectra under high excitation and/or at high temperature. By measuring the PL dependence on both temperature and excitation power and by analyzing the time-resolved PL results, we have attributed the PL peak to the recombination of delocalized excitons in QWs. Furthermore, a competition process between localized and delocalized excitons is observed in the temperature-dependent PL spectra under the short pulse excitation. This competition is believed to be responsible for the temperature-induced S-shaped PL shift often observed in the disordered alloy semiconductor system under continuous-wave excitation. (C) 2001 American Institute of Physics.

Two-dimensional excitonic emission in InAs submonolayers

Photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1/12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broadening of the PL from InAs layers can be well described by the quantum-well model with InAs islands coupling to each other and being regarded as a quasiwell. From the temperature dependence of the exciton linewidth, the exciton-LO-phonon scattering coefficient was found to be comparable to that in conventional two-dimensional quantum wells. In the TRPL measurements, the PL decay time increases linearly with temperature, which is a typical characteristic of free excitons in quantum wells. All these results indicate that the excitons localized in InAs exhibit two-dimensional properties of quantum wells, despite the topographical islandlike structure.

Optical Pr operties of GaNAs and GaAsSb Semiconductors

Under short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from GaNx As1- x/GaAs SQWs. This new emission has totally different optical properties compared with the localized exciton transition in GaNx As1-x, and is attributed to the recombination of delocalized excitons in QWs. At the same time, a competition process between localized and delocalized exciton emissions in GaNx As1-x/GaAs quantum wells is observed in the temperaturedependent PL spectra under the short pulse excitation. This competition process for the first time, reveals the physical origin of the temperature-induced S-shaped PL peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. We have also investigated a set of GaNx As1- x samples with small nitrogen composition( x ＜ 1% )by PL, and time-resolved PL. After the PL dependence on temperature and excitation power and PL dynamics were measured, the new PL peak was identified as an intrinsic transition of alloy, rather than N-related bound states. This is the first observation in PL, showing that alloy state exists in GaNx As1- x materials even when N composition is smaller than 0.1%. Finally by selective excitation,both type-Ⅰ and type-Ⅱ transitions were observed simultaneously in GaAs1-xSbx/GaAs SQWs for the first time.

Optical study of localized and delocalized states in GaAsN/GaAs

Taking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Synthesis and luminescence properties of monodisperse spherical Y2O3 : Eu3+@SiO2 particles with core-shell structure

Y2O3: Eu3+ phosphor layers were deposited on monodisperse SiO2 particles with different sizes ( 300, 500, 900, and 1200 nm) via a sol-gel process, resulting in the formation of Y2O3: Eu3+@SiO2 core-shell particles. X-ray diffraction ( XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy ( TEM), time-resolved photoluminescence ( PL) spectra, and lifetimes were employed to characterize the Y2O3: Eu3+@SiO2 core-shell samples. The results of XRD indicated that the Y2O3: Eu3+ layers began to crystallize on the silica surfaces at 600 degrees C and the crystallinity increased with the elevation of annealing temperature until 900 degrees C. The obtained core-shell particles have perfect spherical shape with narrow size distribution and non-agglomeration. The thickness of the shells could be easily controlled by changing the number of deposition cycles ( 60 nm for three deposition cycles). Under the excitation of ultraviolet ( 250 nm), the Eu3+ ion mainly shows its characteristic red ( 611 nm, D-5(0)-F-7(2)) emissions in the core-shell particles from Y2O3: Eu3+ shells.

Spectra and long-lasting properties of Sm3+-doped yttrium oxysulfide phosphor

We reported, for the first time to the best of our knowledge, the Sm3+ -doped yttriurn oxysulfide phosphors has reddish orange long-lasting phosphorescence. The phosphor show prominent luminescence in reddish orange due to the electronic transitions of (4)G(5/2) --> H-6(J) (J = 5/2, 7/2, 9/2), the afterglow color of this type of phosphors is a mixture of the three above mentioned electronic transition emissions and have a little different when the concentration of the Sm3+ dopant changes. Synthesis procedure of the Sm3+-yttrium oxysulfide reddish orange phosphor through the flux fusion method with binary flux compositions was presented. The synthesized phosphors were analyzed using X-ray diffraction (XRD) to interpret the structural characterization. The XRD analysis result reveal that the Y2O2S:Sm3+ phosphor synthesized with a binary flux composition containing (S and Na2CO3 at a ratio of 1: 1 at 30 wt.% of total raw material) at 1050degreesC for 3 h was in single-phase. Luminescence properties of the Y2O2S:Sm3+ long-lasting phosphor was analyzed by measuring the excitation spectra, emission spectra and afterglow decay curve. The mechanism of the strong afterglow from Y2O2S:Sm3+ was also discussed in this paper.

Sol-gel synthesis and photoluminescence properties of spherical SiO2@LaPO4 : Ce3+/Tb3+ particles with a core-shell structure

LaPO4: Ce3+ and LaPO4: Ce3+, Tb3+ phosphor layers have been deposited successfully on monodispersed and spherical SiO2 particles of different sizes ( 300, 500, 900 and 1200 nm) through a sol - gel process, resulting in the formation of core - shell structured SiO2@ LaPO4: Ce3+/ Tb3+ particles. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microcopy (SEM), transmission electron microscopy (TEM), and general and time-resolved photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting SiO2@ LaPO4: Ce3+/ Tb3+ samples. The XRD results demonstrate that the LaPO4: Ce3+, Tb3+ layers begin to crystallize on the SiO2 templates after annealing at 700 degrees C, and the crystallinity increases on raising the annealing temperature. The obtained core - shell phosphors have perfectly spherical shape with a narrow size distribution, non-agglomeration, and a smooth surface. The doped rare-earth ions show their characteristic emission in the core - shell phosphors, i.e. Ce3+ 5d - 4f and Tb3+5D4 - F-7(J) (J = 6 - 3) transitions, respectively. The PL intensity of the Tb3+ increased on increasing the annealing temperature and the SiO2 core particle size.

Subgrid-scale contributions to Lagrangian time correlations in isotropic turbulence

The application of large-eddy simulation (LES) to particle-laden turbulence raises such a fundamental question as whether the LES with a subgrid scale (SGS) model can correctly predict Lagrangian time correlations (LTCs). Most of the currently existing SGS models are constructed based on the energy budget equations. Therefore, they are able to correctly predict energy spectra, but they may not ensure the correct prediction on the LTCs. Previous researches investigated the effect of the SGS modeling on the Eulerian time correlations. This paper is devoted to study the LTCs in LES. A direct numerical simulation (DNS) and the LES with a spectral eddy viscosity model are performed for isotropic turbulence and the LTCs are calculated using the passive vector method. Both a priori and a posteriori tests are carried out. It is observed that the subgrid-scale contributions to the LTCs cannot be simply ignored and the LES overpredicts the LTCs than the DNS. It is concluded from the straining hypothesis that an accurate prediction of enstrophy spectra is most critical to the prediction of the LTCs.

Cr~(2+):ZnSe的激光输出和调谐性能

Cr~(2+):ZnSe具有很宽的吸收带和发射带,是中红外波段优秀的可调谐激光材料。从吸收光谱、发射光谱以及角度调谐输出对Cr~(2+):ZnSe晶体的激光输出性能进行了研究。采用真空高温扩散法制备Cr~(2+):ZnSe晶体.获得了高浓度的Cr~(2+)离子掺杂的厚1.7 mm,直径10 mm的薄片ZnSe晶体。使用中心波长2.05μm,最大输出功率8 W的Tm离子掺杂的光纤激光器抽运,使用平凹腔结构搭建谐振腔,获得了最大平均功率1.034 W,中心波长2.367μm,线宽10 nm的连续激光输出。利用角度调谐的方法,对Cr:ZnSe晶体的调谐性能进行了研究,在100 nm范围内获得了调谐输出。

Broadband near-infrared emission in Er3+-Tm3+ codoped chalcohalide glasses

The near-IR emission spectra of Er3+-Tm3+ codoped 70GeS(2)-20In(2)S(3)-10CsI chalcohalide glasses were studied with an 808 nm laser as an excitation source. A broad emission extending from 1.35 to 1.7 mu m with a FWHM of similar to 160 nm was recorded in a 0.1 mol.% Er2S3, 0.5 mol.% Tm2S3 codoped chalcohalide glass. The fluorescence decay curves of glasses were measured by monitoring the emissions of Tm3+ at 1460 nm and Er3+ at 1540 nm, and the lifetimes were obtained from the first-order exponential fit. The luminescence mechanism and the possible energy-transfer processes are discussed with respect to the energy-level diagram of Er3+ and Tm3+ ions. (C) 2008 Optical Society of America

Crystal growth and spectroscopic characterization of Yb-doped and Yb, Na-codoped CaF2 laser crystals by TGT

High-quality 2at%-doped Yb:CaF2 and Yb,Na:CaF2 single crystals with diameter of 76mm were grown by the temperature gradient technique. For the first time, distribution coefficients (KO) of Yb in the two crystals were determined to be 1.07 and 0.91, respectively, by measuring the Yb concentrations at the growth starting position in the as-grown boules. Absorption and emission spectra of the two different crystals were measured at room temperature. Experimental results show that Na+ ions codoping with Yb3+ as charge compensators make Yb3+ ions in CaF2 lattice to be a quasi-single-center system, and greatly suppress the deoxidization of Yb3+ to Yb2+ (c) 2005 Elsevier B.V. All rights reserved.

Temperature dependence of the 1.03 mu m stimulated emission cross section of Cr : Yb : YAG crystal

The fluorescence emission spectra of Cr:Yb:YAG crystal are measured and the effective stimulated emission cross section of the crystal are obtained from -80 degrees C to +80 degrees C. A linear temperature dependence between -80 degrees C and +80 degrees C is reported for the 1.03 mu m peak stimulated emission cross section of Cr:Yb:YAG crystal. (c) 2004 Elsevier B.V. All rights reserved.

Temperature dependence of the 1.064-mu m stimulated emission cross-section of Cr : Nd : YAG crystal

The fluorescence emission spectra of Cr:Nd:YAG crystal are measured and the effective stimulated emission cross-section of the crystal is obtained from -80 to +80 degrees C. A linear temperature dependence between -80 and +80 degrees C is reported for the 1.064-mu m peak stimulated emission cross-section of Cr:Nd:YAG crystal. (C) 2005 Elsevier Ltd. All rights reserved.

Sites structure and spectroscopic properties of Yb-doped and Yb, Na-codoped CaF2 laser crystals

For the first time, the effect of Na+ on crystal structure, valence state of Yb ions, spectroscopic properties of YbF3-doped CaF2 system was systematically studied. Na+ can greatly suppress the deoxidization of Yb3+ to Yb2+. Absorption and emission spectra showed codoping Na+ with different Na:Yb ratios can modulate the spectroscopy and photoluminescence properties of Yb3+ ions in CaF2 lattice in a large scope. The emission lifetime and quantum efficiency of Yb3+ in CaF2 were greatly enhanced by the codopant of Na+. The potential laser performances of the new Yb, Na-codoped CaF2 crystals were predicted. (c) 2005 Elsevier B.V. All rights reserved.