Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations

Neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (TSC) and current deep level transient spectroscopy (I-DLTS). These studies have been correlated to the traditional C-V, I-V, and transient current and charge techniques (TCT/TChT) after neutron radiation and subsequent thermal anneals. It has been found that the increases of the space charge density, N-eff, in irradiated detectors after thermal anneals (N-eff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. In particular, increases of the double vacancy center (V-V and V-V-- -) and/or C-i-O-i level have good correlations with the N-eff reverse anneal. It has also been observed that the leakage current of highly irradiated (Phi(n) > 10(13) n/cm(2)) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (Phi(n) < 10(13) n/cm(2)) detectors. It is apparent that V-V center and/or C-i-O-i level play important roles in both N-eff and leakage current degradations for highly irradiated high resistivity silicon detectors.

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

Pub/Sub系统中分布式复合事件检测技术研究

随着信息技术的发展，Pub/Sub系统由于具有异步和松耦合的特点，被越来越广泛的应用到金融、供应链管理、物流等领域。在这些应用中，用户对具有各种特定逻辑或时序关系的复合事件的订阅需求越来越迫切，这使得Pub/Sub系统中的分布式复合事件检测技术成为研究的热点，分布式复合事件检测技术包括复合订阅语言、复合匹配算法、以及订阅和事件的路由算法。 目前已有的Pub/Sub系统提供的复合订阅语言比较简单，对时序支持较弱，不能满足实际应用的需要，已有的复合匹配算法也不能有效的支持具有丰富时序关系的复合事件的检测。在路由方面，基于内容的Pub/Sub系统大都是在树结构或者无环图结构的覆盖网络上，采用基于过滤的原子路由方法，该路由方法需要将原子订阅传遍几乎整个网络，以减少订阅匹配的延迟，但这种路由方法很难适应网络的拓扑变化。而目前基于事件空间划分的路由方法不支持事件空间的动态划分和事件空间在不同服务器之间的移动，并且没有提供专门针对事件空间划分的复合事件检测方法。 本文在调研了各种应用需求的基础上，提出了能够表达事件丰富的时序关系、逻辑关系和事件实例关系的复合订阅语言，并且定义了两种事件排序方式。在消费语义采用配对模式的情况下，给出了该语言在两种事件排序方式下的检测结果集的定义。针对该复合订阅语言提出并实现了图结构和时间事件发生器相结合的复合匹配算法，该匹配算法使图结构可以有效的支持时序关系和非触发式事件的检测。在路由方面，首先实现了基于过滤的逆向路径转发的原子路由方法，并在此基础上，实现了就近检测协议，该协议优化了复合订阅匹配结构在网络中的部署。最后，设计和实现了基于事件空间划分的原子路由方法，该路由方法实现了事件空间的动态划分，并可以根据系统中服务器的负载情况实现事件空间的移动，从而有效的平衡服务器的负载。在此基础上，通过对复合订阅的拆分，并利用可移动的复合事件检测器实现了复合订阅的分布式部署和复合事件的分布式检测，同时通过对复合事件检测器的复用，进一步减少了网络负载和服务器的匹配负载。本文还通过实验验证了匹配算法和两种路由方法的性能和开销。

Isolated sub-30-as pulse generation of an He+ ion by an intense few-cycle chirped laser and its high-order harmonic pulses

We present an efficient method to generate a ultrashort attosecond (as) pulse when a model He+ ion is exposed to the combination of an intense few-cycle chirped laser pulse and its 27th harmonics. By solving the time-dependent Schroumldinger equation, we found that high-order harmonic generation (HHG) from He+ ion is enhanced by seven orders of magnitude due to the presence of the harmonic pulse. After optimizing the chirp of the fundamental pulse, we show that the cut-off energy of the generated harmonics is extended effectively to I-p+25.5U(p). As a result, an isolated 26-as pulse with a bandwidth of 170.5 eV can be obtained directly from the supercontinuum around the cut-off of HHG. To better understand the physical origin of HHG enhancement and attosecond pulse emission, we perform semiclassical simulations and analyze the time-frequency characteristics of attosecond pulse.

Microscopic Three-Body Force Effect on Nucleon-Nucleon Cross Sections in Symmetric Nuclear Matter

We provide a microscopic calculation of neutron-proton and proton-proton cross sections in symmetric nuclear matter at various densities, using the Brueckner-Hartee-Fock approximation scheme with the Argonne V-14 potential including the contribution of microscopic three-body force. We investigate separately the effects of three-body force on the effective mass and on the scattering amplitude. In the present calculation, the rearrangement contribution of three-body force is considered, which will reduce the neutron and proton effective mass, and depress the amplitude of cross section. The effect of three body force is shown to be repulsive, especially in high densities and large momenta, which will suppress the cross section markedly.

Superfluidity in neutron matter and symmetric nuclear matter and the effect of a microscopic three-body force

The neutron (PF2)-P-3 pairing gap in pure neutron matter, neutron (PF2)-P-3 gap and neutron-proton (SD1)-S-3 gap in symmetric nuclear matter have been studied by using the Brueckner-Hartree-Fock(BHF) approach and the BCS theory. We have concentrated on investigating and discussing the three-body force effect on the nucleon superfluidity. The calculated results indicate that the three-body force enhances remaxkably the (PF2)-P-3 superfluidity in neutron matter. It also enhances the (PF2)-P-3 superfluidity in symmetric nuclear matter and its effect increases monotonically as the Fermi-momentum k(F) increases, whereas the three-body force is shown to influence only weakly the neutron-proton (SD1)-S-3 gap in symmetric nuclear matter.

Neutron (PF2)-P-3 superfluidity in neutron matter and the effect of microscopic three-body force

The neutron (PF2)-P-3 pairing gap in pure neutron matter has been studied by using the Brueckner-Hartree-Fock( BHF) approach and the BCS theory. We have concentrated our attention on investigating the three-body force effect on the neutron superfluidity in the (PF2)-P-3 channel. The calculated results indicate that the three-body force enhances remarkably the (PF2)-P-3 superfluidity in neutron matter. When adopting the BHF single-particle spectrum, the three-body force turns out to increase the maximum value of the pairing gap from about 0.22 MeV to about 0.5 MeV.

Microscopic three-body forces and kaon condensation in cold neutrino-trapped matter

We investigate the composition and the equation of state of the kaon condensed phase in neutrino-free and neutrino-trapped star matter within the framework of the Brueckner-Hartree-Fock approach with three-body forces. We find that neutrino trapping shifts the onset density of kaon condensation to a larger baryon density, and reduces considerably the kaon abundance. As a consequence, when kaons are allowed, the equation of state of neutrino-trapped star matter becomes stiffer than the one of neutrino free matter. The effects of different three-body forces are compared and discussed. Neutrino trapping turns out to weaken the role played by the symmetry energy in determining the composition of stellar matter, and thus reduces the difference between the results obtained by using different three-body forces.