89 resultados para Stress intensity factor (SIF)


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应用半权函数法求解双材料界面裂纹的平面问题.由平衡方程、应力应变关系、界面的连续条件以及裂纹面零应力条件推导出裂尖的位移和应力场,其特征值为lambda及其共轭.设置特征值为lambda的虚拟位移和应力场,即界面裂纹的半权函数.由功的互等定理得到应力强度因子KⅠ和KⅡ以半权函数与绕裂尖围道上参考位移和应力积分关系的表达式.数值算例体现了半权函数法精度可靠、计算简便的特点.

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应用半权函数法求解双材料界面裂纹的应力强度因子,得到以半权函数对参考位移与应力加权积分的形式表示的应力强度因子.针对特征值为复数λ的双材料界面裂纹裂尖应力和位移场,设置与之对应特征值为-λ的位移函数,即半权函数.半权函数的应力函数满足平衡方程,应力应变关系,界面的连续条件以及在裂纹面上面力为0;半权函数与裂纹体的几何尺寸无关,对边界条件没有要求.由功的互等定理得到应力强度因子K_Ⅰ和K_Ⅱ的积分形式表达式.本文计算了多种情况下界面裂纹应力强度因子的算例,与文献结果符合得很好.由于裂尖应力的振荡奇异性已经在积分中避免,只需考虑绕裂尖远场的任意路径上位移和应力,即使采用该路径上较粗糙的参考解也可以得到较精确的结果.

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本文利用线性压电学理论,编制了线性压电材料四结点等参有限元程序,进行了校核,并对PZT-5A材料压电智能元件和压电材料标准断裂试进行了计算,计算包括:①采用实际工程应用的压电智能元件尺寸,计算了元件的压电响应;并针对元件内部电极尖端区域容易引起破坏的现象,计算了该区域的奇异应力、应变场及电场。②计算了加力和加电两种情况下压电材料标准断裂试件应力强度因子影响系数F_I和电位移强度因子影响系数F_D。裂纹面边界条件采用D-P条件,试件包括紧凑拉伸标准试件和三点弯曲标准试件。③应用Lagrange乘子法将Parton裂纹边界条件加于有限元程序中,计算了上述两种标准断裂试件的F_I和F_D,计算结果与采用D-P裂纹边界条件的计算结果有很大差异。

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利用解析的方法研究了非相对论线偏振激光与等离子体相互作用中的J×B加热吸收机理,建立了一种包含两类有质动力效应在内的自洽理论.探讨了密度轮廓修正下的J×B加热机理,给出了相应的吸收系数随激光场强度变化的关系曲线.研究发现,当激光场强度A0=20时,J×B加热所导致的吸收系数fabs约为2.8%.

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We report a high molar extinction coefficient metal-free sensitizer composed of a triarylamine donor in combination with the 2-(2,2'-bithiophen-5-yl)acrylonitrile conjugation unit and cyanoacrylic acid as an acceptor. In conjugation with a volatile acetonitrile-based electrolyte or a solvent-free ionic liquid electrolyte, we have fabricated efficient dye-sensitized solar cells showing a corresponding 7.5% or 6.1% efficiency measured under the air mass 1.5 global sunlight. The ionic liquid cell exhibits excellent stability during a 1000 h accelerated test under the light-soaking and thermal dual stress. Intensity-modulated photocurrent and photovolatge spectroscopies were employed along with the transient photoelectrical decay measurements to detail the electron transport in the mesoporous titania films filled with these two electrolytes.

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The far-field intensity distribution of hollow Gaussian beams was investigated based on scalar diffraction theory. An analytical expression of the M-2 factor of the beams was derived on the basis of the second-order moments. Moreover, numerical examples to illustrate our analytical results are given. (c) 2005 Optical Society of America.

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We investigated M-2 factor and far-field distribution of beams generated by Gaussian mirror resonator. And we found usable analytical expressions of the M2 factor and the far-field distribution intensity with respect to variation of diffraction parameters. Particular attention was paid to the parameters such as mirror spot size and reflectance of the Gaussian mirror. (c) 2006 Elsevier GrnbH. All rights reserved.

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The heme-regulated initiation factor 2 alpha kinase (HRI) is acknowledged to play an important role in translational shutoff in reticulocytes in response to various cellular stresses. In this study, we report its homologous cDNA cloning and characterization from cultured flounder embryonic cells (FEC) after treatment with UV-inactivated grass carp haemorrhagic virus (GCHV). The full-length cDNA of Paralichthys olivaceus HRI homologue (PoHRI) has 2391 bp and encodes a protein of 651 amino acids. The putative PoHRI protein exhibits high identity with all members of eIF2 alpha kinase family. It contains 12 catalytic subdomains located within the C-terminus of all Ser/Thr protein kinases, a unique kinase insertion of 136 amino acids between subdomains IV and V, and a relatively conserved N-terminal domain (NTD). Upon heat shock, virus infection or Poly PC treatment, PoHRI mRNA and protein are significantly upregulated in FEC cells but show different expression patterns in response to different stresses. In healthy flounders, PoHRI displays a wide tissue distribution at both the mRNA and protein levels. These results indicate that PoHRI is a ubiquitous eIF2a kinase and might play an important role in translational control over nonheme producing FEC cells under different stresses. (c) 2006 Elsevier Ltd. All rights reserved.

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A series of experiments have been conducted on cruciform specimens to investigate fatigue crack growth from circular notches under high levels of biaxial stress. Two stress levels (Δσ1= 380 and 560 MPa) and five stress biaxialities (λ=+1.0, +0.5, 0, −0.5 and −1.0; where λ=σ21 were adopted in the fatigue tests in type 316 stainless steel having a monotonic yield strength of 243 MPa. The results reveal that fatigue crack growth rates are markedly influenced by both the stress amplitude and the stress biaxiality. A modified model has been developed to describe fatigue crack growth under high levels of biaxial stress.

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We investigate experimentally the high-order harmonic generation from aligned CO2 molecules and demonstrate that the modulation inversion of the harmonic yield with respect to molecular alignment can be altered dramatically by fine-tuning the intensity of the driving laser pulse for harmonic generation. The results can be modeled by employing the strong field approximation including a ground state depletion factor. The laser intensity is thus proved to be a parameter that can control the high-harmonic emission from aligned molecules.

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The effects of cadmium (Cd2+) on growth status, chlorophyll (Chl) content, photochemical efficiency, and photosynthetic intensity were studied on Canna indica Linn. Plant specimens that were produced from a constructed wetland and precultivated hydroponically in 20 L of 1/10 Hoagland solution under greenhouse conditions for I week were exposed to cadmium in concentrations of 0, 0.4, 0.8, 1.6 and 3.2 mg L- Cd2+, respectively. The results show that leaves were injured in the Cd2+ solution by the third day of exposure and the injury became more serious with an increase in the applied heavy metal. Under 3.2 mg L-1 Cd2+ treatment, growth retardation, the decrease of chlorophyll content from 0.70 to 0.43 mg g(-1) FW, and a decrease in Chl a/b ratio from 2.0 to 1.2 were observed. Chl a was more sensitive than Chl b to Cd2+ stress. The decrease was the same with photochemical efficiency. Photosynthetic intensity decreased by 13.3% from 1.5X10(4) mumol m(-2)s(-1) CO2 in control to 1.3x10(4) mumol m(2)s(-1) CO2 in the treatment of 3.2 mg L-1. Because Canna species are used in heavy metal phytoremediation, these results show that C. indica can tolerate 0.4 to 0.8 mg L-1 Cd2+. Therefore, it is a potential species for phytoremediation of cadmium with some limitations only at higher concentrations.

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Decline of submersed macrophytes in Lake Donghu of China with the progress of eutrophication is assumedly due to low light stress by algae blooming. I conducted a laboratory experiment to study the impact of low-light stress on the growth of Potamogeton maackianus A. Been, a dominant submersed macrophyte of the lake before the 1970s. Plants were grown for six weeks in aquaria with Lake Donghu sediment and enriched water. Light delivered to aquaria was adjusted to simulate the typical Lake Donghu light intensities that exist at several water depths from 0.6m to 1.7m. Biomass growth of the plant was inversely related to light intensity at the simulated depths of greater than or equal to 1.0m (r = 0.96, p < 0.05, n=6) and was negative at the depths of greater than or equal to 1.4m. These results indicate that photosynthetic light saturation and compensation points of the plant in Lake Donghu should be ca. 0,9m and ca. 1.5m depths, respectively. Chlorophyll content, growth of main shoot, total shoot lengths and density of the plant all peaked at 1.2-1.3m simulated depths. These results indicate that P. maackianus responds to low light stress primarily by elongation of shoots, and increase of density. Its biomass growth and nutrient uptake rate did not correlate with the accelerated shoot growth. Below the light intensities of water deeper than 1.2-1.3m, shoot growth rate decreased. The flexible tolerant strategy of P. maackianus to low-light stress suggests that the disappearance of this plant from the lake was not mainly due to eutrophication-induced low-light stress.

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This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMA1 ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress. (C) 2004 Elsevier B.V. All rights reserved.